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authorStefan Roese <sr@denx.de>2005-12-15 09:43:12 +0100
committerStefan Roese <sr@denx.de>2005-12-15 09:43:12 +0100
commit81a3170b150cbcafc9a59c080f0e759f6a2a5ce5 (patch)
treec27b79400ea3f723ce6902fe426c33e8cdd318f9 /board/amcc/yellowstone
parente43232dee85d17dff4fad7fc8ff2bc5f6b9c7a76 (diff)
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Changes to Yellowstone & Yosemite 440EP/GR eval boards:
- Changed GPIO setup to enable another address line in order to address 64M of FLASH. - Added function sdram_tr1_set to auto calculate the tr1 value for the DDR. Patch by Steven Blakeslee, 12 Dec 2005
Diffstat (limited to 'board/amcc/yellowstone')
-rw-r--r--board/amcc/yellowstone/yellowstone.c93
1 files changed, 86 insertions, 7 deletions
diff --git a/board/amcc/yellowstone/yellowstone.c b/board/amcc/yellowstone/yellowstone.c
index 585f072..8ddf910 100644
--- a/board/amcc/yellowstone/yellowstone.c
+++ b/board/amcc/yellowstone/yellowstone.c
@@ -59,10 +59,10 @@ int board_early_init_f(void)
* Setup the GPIO pins
*-------------------------------------------------------------------*/
/*CPLD cs */
- /*setup Address lines for flash sizes larger than 16Meg. */
- out32(GPIO0_OSRL, in32(GPIO0_OSRL) | 0x40010000);
- out32(GPIO0_TSRL, in32(GPIO0_TSRL) | 0x40010000);
- out32(GPIO0_ISR1L, in32(GPIO0_ISR1L) | 0x40000000);
+ /*setup Address lines for flash size 64Meg. */
+ out32(GPIO0_OSRL, in32(GPIO0_OSRL) | 0x50010000);
+ out32(GPIO0_TSRL, in32(GPIO0_TSRL) | 0x50010000);
+ out32(GPIO0_ISR1L, in32(GPIO0_ISR1L) | 0x50000000);
/*setup emac */
out32(GPIO0_TCR, in32(GPIO0_TCR) | 0xC080);
@@ -129,7 +129,7 @@ int board_early_init_f(void)
#endif
/*get rid of flash write protect */
- *(unsigned char *)(CFG_BCSR_BASE | 0x07) = 0x40;
+ *(unsigned char *)(CFG_BCSR_BASE | 0x07) = 0x00;
return 0;
}
@@ -207,9 +207,85 @@ int checkboard(void)
* PLB @ 133 MHz
*
************************************************************************/
+#define NUM_TRIES 64
+#define NUM_READS 10
+
+void sdram_tr1_set(int ram_address, int* tr1_value)
+{
+ int i;
+ int j, k;
+ volatile unsigned int* ram_pointer = (unsigned int*)ram_address;
+ int first_good = -1, last_bad = 0x1ff;
+
+ unsigned long test[NUM_TRIES] = {
+ 0x00000000, 0x00000000, 0xFFFFFFFF, 0xFFFFFFFF,
+ 0x00000000, 0x00000000, 0xFFFFFFFF, 0xFFFFFFFF,
+ 0xFFFFFFFF, 0xFFFFFFFF, 0x00000000, 0x00000000,
+ 0xFFFFFFFF, 0xFFFFFFFF, 0x00000000, 0x00000000,
+ 0xAAAAAAAA, 0xAAAAAAAA, 0x55555555, 0x55555555,
+ 0xAAAAAAAA, 0xAAAAAAAA, 0x55555555, 0x55555555,
+ 0x55555555, 0x55555555, 0xAAAAAAAA, 0xAAAAAAAA,
+ 0x55555555, 0x55555555, 0xAAAAAAAA, 0xAAAAAAAA,
+ 0xA5A5A5A5, 0xA5A5A5A5, 0x5A5A5A5A, 0x5A5A5A5A,
+ 0xA5A5A5A5, 0xA5A5A5A5, 0x5A5A5A5A, 0x5A5A5A5A,
+ 0x5A5A5A5A, 0x5A5A5A5A, 0xA5A5A5A5, 0xA5A5A5A5,
+ 0x5A5A5A5A, 0x5A5A5A5A, 0xA5A5A5A5, 0xA5A5A5A5,
+ 0xAA55AA55, 0xAA55AA55, 0x55AA55AA, 0x55AA55AA,
+ 0xAA55AA55, 0xAA55AA55, 0x55AA55AA, 0x55AA55AA,
+ 0x55AA55AA, 0x55AA55AA, 0xAA55AA55, 0xAA55AA55,
+ 0x55AA55AA, 0x55AA55AA, 0xAA55AA55, 0xAA55AA55 };
+
+ /* go through all possible SDRAM0_TR1[RDCT] values */
+ for (i=0; i<=0x1ff; i++) {
+ /* set the current value for TR1 */
+ mtsdram(mem_tr1, (0x80800800 | i));
+
+ /* write values */
+ for (j=0; j<NUM_TRIES; j++) {
+ ram_pointer[j] = test[j];
+
+ /* clear any cache at ram location */
+ __asm__("dcbf 0,%0": :"r" (&ram_pointer[j]));
+ }
+
+ /* read values back */
+ for (j=0; j<NUM_TRIES; j++) {
+ for (k=0; k<NUM_READS; k++) {
+ /* clear any cache at ram location */
+ __asm__("dcbf 0,%0": :"r" (&ram_pointer[j]));
+
+ if (ram_pointer[j] != test[j])
+ break;
+ }
+
+ /* read error */
+ if (k != NUM_READS) {
+ break;
+ }
+ }
+
+ /* we have a SDRAM0_TR1[RDCT] that is part of the window */
+ if (j == NUM_TRIES) {
+ if (first_good == -1)
+ first_good = i; /* found beginning of window */
+ } else { /* bad read */
+ /* if we have not had a good read then don't care */
+ if(first_good != -1) {
+ /* first failure after a good read */
+ last_bad = i-1;
+ break;
+ }
+ }
+ }
+
+ /* return the current value for TR1 */
+ *tr1_value = (first_good + last_bad) / 2;
+}
+
void sdram_init(void)
{
register uint reg;
+ int tr1_bank1, tr1_bank2;
/*--------------------------------------------------------------------
* Setup some default
@@ -221,7 +297,7 @@ void sdram_init(void)
mtsdram(mem_wddctr, 0x40000000); /* ?? */
/*clear this first, if the DDR is enabled by a debugger
- then you can not make changes. */
+ then you can not make changes. */
mtsdram(mem_cfg0, 0x00000000); /* Disable EEC */
/*--------------------------------------------------------------------
@@ -234,7 +310,6 @@ void sdram_init(void)
mtsdram(mem_b1cr, 0x080a4001); /* SDBA=0x080 128MB, Mode 3, enabled */
mtsdram(mem_tr0, 0x410a4012); /* ?? */
- mtsdram(mem_tr1, 0x8080080b); /* ?? */
mtsdram(mem_rtr, 0x04080000); /* ?? */
mtsdram(mem_cfg1, 0x00000000); /* Self-refresh exit, disable PM */
mtsdram(mem_cfg0, 0x34000000); /* Disable EEC */
@@ -250,6 +325,10 @@ void sdram_init(void)
if (reg & 0x80000000)
break;
}
+
+ sdram_tr1_set(0x00000000, &tr1_bank1);
+ sdram_tr1_set(0x08000000, &tr1_bank2);
+ mtsdram(mem_tr1, (((tr1_bank1+tr1_bank2)/2) | 0x80800800) );
}
/*************************************************************************