sunxi: dram: Re-introduce the impedance calibration ond ODT

The DRAM controller allows to configure impedance either by using the
calibration against an external high precision 240 ohm resistor, or
by skipping the calibration and loading pre-defined data. The DRAM
controller register guide is available here:

    http://linux-sunxi.org/A10_DRAM_Controller_Register_Guide#SDR_ZQCR0

The new code supports both of the impedance configuration modes:
   - If the higher bits of the 'zq' parameter in the 'dram_para' struct
     are zero, then the lowest 8 bits are used as the ZPROG value, where
     two divisors encoded in lower and higher 4 bits. One divisor is
     used for calibrating the termination impedance, and another is used
     for the output impedance.
   - If bits 27:8 in the 'zq' parameters are non-zero, then they are
     used as the pre-defined ZDATA value instead of performing the ZQ
     calibration.

Two lowest bits in the 'odt_en' parameter enable ODT for the DQ and DQS
lines individually. Enabling ODT for both DQ and DQS means that the
'odt_en' parameter needs to be set to 3.

Signed-off-by: Siarhei Siamashka <siarhei.siamashka@gmail.com>
Acked-by: Ian Campbell <ijc@hellion.org.uk>
Signed-off-by: Hans de Goede <hdegoede@redhat.com>

1 files changed, 4 insertions, 0 deletions

diff --git a/arch/arm/include/asm/arch-sunxi/dram.h b/arch/arm/include/asm/arch-sunxi/dram.h
index 67fbfad..4433eeb 100644
--- a/arch/arm/include/asm/arch-sunxi/dram.h
+++ b/arch/arm/include/asm/arch-sunxi/dram.h
@@ -159,6 +159,10 @@ struct dram_para {
 
 #define DRAM_ZQCR0_IMP_DIV(n) (((n) & 0xff) << 20)
 #define DRAM_ZQCR0_IMP_DIV_MASK DRAM_ZQCR0_IMP_DIV(0xff)
+#define DRAM_ZQCR0_ZCAL (1 << 31) /* Starts ZQ calibration when set to 1 */
+#define DRAM_ZQCR0_ZDEN (1 << 28) /* Uses ZDATA instead of doing calibration */
+
+#define DRAM_ZQSR_ZDONE (1 << 31) /* ZQ calibration completion flag */
 
 #define DRAM_IOCR_ODT_EN(n) ((((n) & 0x3) << 30) | ((n) & 0x3) << 0)
 #define DRAM_IOCR_ODT_EN_MASK DRAM_IOCR_ODT_EN(0x3)