From 932394ac43e2e778e664eeb6e456fecd0fae6e59 Mon Sep 17 00:00:00 2001 From: Wolfgang Denk Date: Wed, 17 Aug 2005 12:55:25 +0200 Subject: Rewrite of NAND code based on what is in 2.6.12 Linux kernel Patch by Ladislav Michl, 29 Jun 2005 --- include/linux/mtd/compat.h | 44 ++++ include/linux/mtd/mtd-abi.h | 99 +++++++++ include/linux/mtd/mtd.h | 214 ++++++++++++++++++ include/linux/mtd/nand.h | 503 +++++++++++++++++++++++++++++++++---------- include/linux/mtd/nand_ecc.h | 30 +++ include/linux/mtd/nand_ids.h | 1 + 6 files changed, 775 insertions(+), 116 deletions(-) create mode 100644 include/linux/mtd/compat.h create mode 100644 include/linux/mtd/mtd-abi.h create mode 100644 include/linux/mtd/mtd.h create mode 100644 include/linux/mtd/nand_ecc.h (limited to 'include/linux/mtd') diff --git a/include/linux/mtd/compat.h b/include/linux/mtd/compat.h new file mode 100644 index 0000000..460cd45 --- /dev/null +++ b/include/linux/mtd/compat.h @@ -0,0 +1,44 @@ +#ifndef _LINUX_COMPAT_H_ +#define _LINUX_COMPAT_H_ + +#define __user +#define __iomem + +#define ndelay(x) udelay(1) + +#define printk printf + +#define KERN_EMERG +#define KERN_ALERT +#define KERN_CRIT +#define KERN_ERR +#define KERN_WARNING +#define KERN_NOTICE +#define KERN_INFO +#define KERN_DEBUG + +#define kmalloc(size, flags) malloc(size) +#define kfree(ptr) free(ptr) + +/* + * ..and if you can't take the strict + * types, you can specify one yourself. + * + * Or not use min/max at all, of course. + */ +#define min_t(type,x,y) \ + ({ type __x = (x); type __y = (y); __x < __y ? __x: __y; }) +#define max_t(type,x,y) \ + ({ type __x = (x); type __y = (y); __x > __y ? __x: __y; }) + +#define BUG() do { \ + printf("U-Boot BUG at %s:%d!\n", __FILE__, __LINE__); \ +} while (0) + +#define BUG_ON(condition) do { if (condition) BUG(); } while(0) + +#define likely(x) __builtin_expect(!!(x), 1) +#define unlikely(x) __builtin_expect(!!(x), 0) + +#define PAGE_SIZE 4096 +#endif diff --git a/include/linux/mtd/mtd-abi.h b/include/linux/mtd/mtd-abi.h new file mode 100644 index 0000000..afe96b5 --- /dev/null +++ b/include/linux/mtd/mtd-abi.h @@ -0,0 +1,99 @@ +/* + * $Id: mtd-abi.h,v 1.7 2004/11/23 15:37:32 gleixner Exp $ + * + * Portions of MTD ABI definition which are shared by kernel and user space + */ + +#ifndef __MTD_ABI_H__ +#define __MTD_ABI_H__ + +struct erase_info_user { + uint32_t start; + uint32_t length; +}; + +struct mtd_oob_buf { + uint32_t start; + uint32_t length; + unsigned char *ptr; +}; + +#define MTD_ABSENT 0 +#define MTD_RAM 1 +#define MTD_ROM 2 +#define MTD_NORFLASH 3 +#define MTD_NANDFLASH 4 +#define MTD_PEROM 5 +#define MTD_OTHER 14 +#define MTD_UNKNOWN 15 + +#define MTD_CLEAR_BITS 1 // Bits can be cleared (flash) +#define MTD_SET_BITS 2 // Bits can be set +#define MTD_ERASEABLE 4 // Has an erase function +#define MTD_WRITEB_WRITEABLE 8 // Direct IO is possible +#define MTD_VOLATILE 16 // Set for RAMs +#define MTD_XIP 32 // eXecute-In-Place possible +#define MTD_OOB 64 // Out-of-band data (NAND flash) +#define MTD_ECC 128 // Device capable of automatic ECC +#define MTD_NO_VIRTBLOCKS 256 // Virtual blocks not allowed + +// Some common devices / combinations of capabilities +#define MTD_CAP_ROM 0 +#define MTD_CAP_RAM (MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE) +#define MTD_CAP_NORFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE) +#define MTD_CAP_NANDFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB) +#define MTD_WRITEABLE (MTD_CLEAR_BITS|MTD_SET_BITS) + + +// Types of automatic ECC/Checksum available +#define MTD_ECC_NONE 0 // No automatic ECC available +#define MTD_ECC_RS_DiskOnChip 1 // Automatic ECC on DiskOnChip +#define MTD_ECC_SW 2 // SW ECC for Toshiba & Samsung devices + +/* ECC byte placement */ +#define MTD_NANDECC_OFF 0 // Switch off ECC (Not recommended) +#define MTD_NANDECC_PLACE 1 // Use the given placement in the structure (YAFFS1 legacy mode) +#define MTD_NANDECC_AUTOPLACE 2 // Use the default placement scheme +#define MTD_NANDECC_PLACEONLY 3 // Use the given placement in the structure (Do not store ecc result on read) +#define MTD_NANDECC_AUTOPL_USR 4 // Use the given autoplacement scheme rather than using the default + +struct mtd_info_user { + uint8_t type; + uint32_t flags; + uint32_t size; // Total size of the MTD + uint32_t erasesize; + uint32_t oobblock; // Size of OOB blocks (e.g. 512) + uint32_t oobsize; // Amount of OOB data per block (e.g. 16) + uint32_t ecctype; + uint32_t eccsize; +}; + +struct region_info_user { + uint32_t offset; /* At which this region starts, + * from the beginning of the MTD */ + uint32_t erasesize; /* For this region */ + uint32_t numblocks; /* Number of blocks in this region */ + uint32_t regionindex; +}; + +#define MEMGETINFO _IOR('M', 1, struct mtd_info_user) +#define MEMERASE _IOW('M', 2, struct erase_info_user) +#define MEMWRITEOOB _IOWR('M', 3, struct mtd_oob_buf) +#define MEMREADOOB _IOWR('M', 4, struct mtd_oob_buf) +#define MEMLOCK _IOW('M', 5, struct erase_info_user) +#define MEMUNLOCK _IOW('M', 6, struct erase_info_user) +#define MEMGETREGIONCOUNT _IOR('M', 7, int) +#define MEMGETREGIONINFO _IOWR('M', 8, struct region_info_user) +#define MEMSETOOBSEL _IOW('M', 9, struct nand_oobinfo) +#define MEMGETOOBSEL _IOR('M', 10, struct nand_oobinfo) +#define MEMGETBADBLOCK _IOW('M', 11, loff_t) +#define MEMSETBADBLOCK _IOW('M', 12, loff_t) + +struct nand_oobinfo { + uint32_t useecc; + uint32_t eccbytes; + uint32_t oobfree[8][2]; + uint32_t eccpos[32]; +}; + +#endif /* __MTD_ABI_H__ */ diff --git a/include/linux/mtd/mtd.h b/include/linux/mtd/mtd.h new file mode 100644 index 0000000..9ef4cce --- /dev/null +++ b/include/linux/mtd/mtd.h @@ -0,0 +1,214 @@ +/* + * $Id: mtd.h,v 1.56 2004/08/09 18:46:04 dmarlin Exp $ + * + * Copyright (C) 1999-2003 David Woodhouse et al. + * + * Released under GPL + */ + +#ifndef __MTD_MTD_H__ +#define __MTD_MTD_H__ +#include +#include + +#define MAX_MTD_DEVICES 16 + +#define MTD_ERASE_PENDING 0x01 +#define MTD_ERASING 0x02 +#define MTD_ERASE_SUSPEND 0x04 +#define MTD_ERASE_DONE 0x08 +#define MTD_ERASE_FAILED 0x10 + +/* If the erase fails, fail_addr might indicate exactly which block failed. If + fail_addr = 0xffffffff, the failure was not at the device level or was not + specific to any particular block. */ +struct erase_info { + struct mtd_info *mtd; + u_int32_t addr; + u_int32_t len; + u_int32_t fail_addr; + u_long time; + u_long retries; + u_int dev; + u_int cell; + void (*callback) (struct erase_info *self); + u_long priv; + u_char state; + struct erase_info *next; +}; + +struct mtd_erase_region_info { + u_int32_t offset; /* At which this region starts, from the beginning of the MTD */ + u_int32_t erasesize; /* For this region */ + u_int32_t numblocks; /* Number of blocks of erasesize in this region */ +}; + +struct mtd_info { + u_char type; + u_int32_t flags; + u_int32_t size; // Total size of the MTD + + /* "Major" erase size for the device. Naïve users may take this + * to be the only erase size available, or may use the more detailed + * information below if they desire + */ + u_int32_t erasesize; + + u_int32_t oobblock; // Size of OOB blocks (e.g. 512) + u_int32_t oobsize; // Amount of OOB data per block (e.g. 16) + u_int32_t oobavail; // Number of bytes in OOB area available for fs + u_int32_t ecctype; + u_int32_t eccsize; + + + // Kernel-only stuff starts here. + char *name; + int index; + + // oobinfo is a nand_oobinfo structure, which can be set by iotcl (MEMSETOOBINFO) + struct nand_oobinfo oobinfo; + + /* Data for variable erase regions. If numeraseregions is zero, + * it means that the whole device has erasesize as given above. + */ + int numeraseregions; + struct mtd_erase_region_info *eraseregions; + + /* This really shouldn't be here. It can go away in 2.5 */ + u_int32_t bank_size; + + int (*erase) (struct mtd_info *mtd, struct erase_info *instr); + + /* This stuff for eXecute-In-Place */ + int (*point) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char **mtdbuf); + + /* We probably shouldn't allow XIP if the unpoint isn't a NULL */ + void (*unpoint) (struct mtd_info *mtd, u_char * addr, loff_t from, size_t len); + + + int (*read) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf); + int (*write) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf); + + int (*read_ecc) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf, u_char *eccbuf, struct nand_oobinfo *oobsel); + int (*write_ecc) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf, u_char *eccbuf, struct nand_oobinfo *oobsel); + + int (*read_oob) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf); + int (*write_oob) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf); + + /* + * Methods to access the protection register area, present in some + * flash devices. The user data is one time programmable but the + * factory data is read only. + */ + int (*read_user_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf); + + int (*read_fact_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf); + + /* This function is not yet implemented */ + int (*write_user_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf); +#if 0 + /* kvec-based read/write methods. We need these especially for NAND flash, + with its limited number of write cycles per erase. + NB: The 'count' parameter is the number of _vectors_, each of + which contains an (ofs, len) tuple. + */ + int (*readv) (struct mtd_info *mtd, struct kvec *vecs, unsigned long count, loff_t from, size_t *retlen); + int (*readv_ecc) (struct mtd_info *mtd, struct kvec *vecs, unsigned long count, loff_t from, + size_t *retlen, u_char *eccbuf, struct nand_oobinfo *oobsel); + int (*writev) (struct mtd_info *mtd, const struct kvec *vecs, unsigned long count, loff_t to, size_t *retlen); + int (*writev_ecc) (struct mtd_info *mtd, const struct kvec *vecs, unsigned long count, loff_t to, + size_t *retlen, u_char *eccbuf, struct nand_oobinfo *oobsel); +#endif + /* Sync */ + void (*sync) (struct mtd_info *mtd); +#if 0 + /* Chip-supported device locking */ + int (*lock) (struct mtd_info *mtd, loff_t ofs, size_t len); + int (*unlock) (struct mtd_info *mtd, loff_t ofs, size_t len); + + /* Power Management functions */ + int (*suspend) (struct mtd_info *mtd); + void (*resume) (struct mtd_info *mtd); +#endif + /* Bad block management functions */ + int (*block_isbad) (struct mtd_info *mtd, loff_t ofs); + int (*block_markbad) (struct mtd_info *mtd, loff_t ofs); + + void *priv; + + struct module *owner; + int usecount; +}; + + + /* Kernel-side ioctl definitions */ + +extern int add_mtd_device(struct mtd_info *mtd); +extern int del_mtd_device (struct mtd_info *mtd); + +extern struct mtd_info *get_mtd_device(struct mtd_info *mtd, int num); + +extern void put_mtd_device(struct mtd_info *mtd); + +#if 0 +struct mtd_notifier { + void (*add)(struct mtd_info *mtd); + void (*remove)(struct mtd_info *mtd); + struct list_head list; +}; + + +extern void register_mtd_user (struct mtd_notifier *new); +extern int unregister_mtd_user (struct mtd_notifier *old); + +int default_mtd_writev(struct mtd_info *mtd, const struct kvec *vecs, + unsigned long count, loff_t to, size_t *retlen); + +int default_mtd_readv(struct mtd_info *mtd, struct kvec *vecs, + unsigned long count, loff_t from, size_t *retlen); +#endif + +#define MTD_ERASE(mtd, args...) (*(mtd->erase))(mtd, args) +#define MTD_POINT(mtd, a,b,c,d) (*(mtd->point))(mtd, a,b,c, (u_char **)(d)) +#define MTD_UNPOINT(mtd, arg) (*(mtd->unpoint))(mtd, (u_char *)arg) +#define MTD_READ(mtd, args...) (*(mtd->read))(mtd, args) +#define MTD_WRITE(mtd, args...) (*(mtd->write))(mtd, args) +#define MTD_READV(mtd, args...) (*(mtd->readv))(mtd, args) +#define MTD_WRITEV(mtd, args...) (*(mtd->writev))(mtd, args) +#define MTD_READECC(mtd, args...) (*(mtd->read_ecc))(mtd, args) +#define MTD_WRITEECC(mtd, args...) (*(mtd->write_ecc))(mtd, args) +#define MTD_READOOB(mtd, args...) (*(mtd->read_oob))(mtd, args) +#define MTD_WRITEOOB(mtd, args...) (*(mtd->write_oob))(mtd, args) +#define MTD_SYNC(mtd) do { if (mtd->sync) (*(mtd->sync))(mtd); } while (0) + + +#ifdef CONFIG_MTD_PARTITIONS +void mtd_erase_callback(struct erase_info *instr); +#else +static inline void mtd_erase_callback(struct erase_info *instr) +{ + if (instr->callback) + instr->callback(instr); +} +#endif + +/* + * Debugging macro and defines + */ +#define MTD_DEBUG_LEVEL0 (0) /* Quiet */ +#define MTD_DEBUG_LEVEL1 (1) /* Audible */ +#define MTD_DEBUG_LEVEL2 (2) /* Loud */ +#define MTD_DEBUG_LEVEL3 (3) /* Noisy */ + +#ifdef CONFIG_MTD_DEBUG +#define DEBUG(n, args...) \ + do { \ + if (n <= CONFIG_MTD_DEBUG_VERBOSE) \ + printk(KERN_INFO args); \ + } while(0) +#else /* CONFIG_MTD_DEBUG */ +#define DEBUG(n, args...) do { } while(0) + +#endif /* CONFIG_MTD_DEBUG */ + +#endif /* __MTD_MTD_H__ */ diff --git a/include/linux/mtd/nand.h b/include/linux/mtd/nand.h index 5236904..9a0108f 100644 --- a/include/linux/mtd/nand.h +++ b/include/linux/mtd/nand.h @@ -2,10 +2,10 @@ * linux/include/linux/mtd/nand.h * * Copyright (c) 2000 David Woodhouse - * Steven J. Hill - * Thomas Gleixner + * Steven J. Hill + * Thomas Gleixner * - * $Id: nand.h,v 1.7 2003/07/24 23:30:46 a0384864 Exp $ + * $Id: nand.h,v 1.68 2004/11/12 10:40:37 gleixner Exp $ * * This program is free software; you can redistribute it and/or modify * it under the terms of the GNU General Public License version 2 as @@ -24,7 +24,7 @@ * bat later if I did something naughty. * 10-11-2000 SJH Added private NAND flash structure for driver * 10-24-2000 SJH Added prototype for 'nand_scan' function - * 10-29-2001 TG changed nand_chip structure to support + * 10-29-2001 TG changed nand_chip structure to support * hardwarespecific function for accessing control lines * 02-21-2002 TG added support for different read/write adress and * ready/busy line access function @@ -32,10 +32,68 @@ * command delay times for different chips * 04-28-2002 TG OOB config defines moved from nand.c to avoid duplicate * defines in jffs2/wbuf.c + * 08-07-2002 TG forced bad block location to byte 5 of OOB, even if + * CONFIG_MTD_NAND_ECC_JFFS2 is not set + * 08-10-2002 TG extensions to nand_chip structure to support HW-ECC + * + * 08-29-2002 tglx nand_chip structure: data_poi for selecting + * internal / fs-driver buffer + * support for 6byte/512byte hardware ECC + * read_ecc, write_ecc extended for different oob-layout + * oob layout selections: NAND_NONE_OOB, NAND_JFFS2_OOB, + * NAND_YAFFS_OOB + * 11-25-2002 tglx Added Manufacturer code FUJITSU, NATIONAL + * Split manufacturer and device ID structures + * + * 02-08-2004 tglx added option field to nand structure for chip anomalities + * 05-25-2004 tglx added bad block table support, ST-MICRO manufacturer id + * update of nand_chip structure description */ #ifndef __LINUX_MTD_NAND_H #define __LINUX_MTD_NAND_H +#include +#include + +struct mtd_info; +/* Scan and identify a NAND device */ +extern int nand_scan (struct mtd_info *mtd, int max_chips); +/* Free resources held by the NAND device */ +extern void nand_release (struct mtd_info *mtd); + +/* Read raw data from the device without ECC */ +extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_t len, size_t ooblen); + + +/* The maximum number of NAND chips in an array */ +#define NAND_MAX_CHIPS 8 + +/* This constant declares the max. oobsize / page, which + * is supported now. If you add a chip with bigger oobsize/page + * adjust this accordingly. + */ +#define NAND_MAX_OOBSIZE 64 + +/* + * Constants for hardware specific CLE/ALE/NCE function +*/ +/* Select the chip by setting nCE to low */ +#define NAND_CTL_SETNCE 1 +/* Deselect the chip by setting nCE to high */ +#define NAND_CTL_CLRNCE 2 +/* Select the command latch by setting CLE to high */ +#define NAND_CTL_SETCLE 3 +/* Deselect the command latch by setting CLE to low */ +#define NAND_CTL_CLRCLE 4 +/* Select the address latch by setting ALE to high */ +#define NAND_CTL_SETALE 5 +/* Deselect the address latch by setting ALE to low */ +#define NAND_CTL_CLRALE 6 +/* Set write protection by setting WP to high. Not used! */ +#define NAND_CTL_SETWP 7 +/* Clear write protection by setting WP to low. Not used! */ +#define NAND_CTL_CLRWP 8 + /* * Standard NAND flash commands */ @@ -45,12 +103,104 @@ #define NAND_CMD_READOOB 0x50 #define NAND_CMD_ERASE1 0x60 #define NAND_CMD_STATUS 0x70 +#define NAND_CMD_STATUS_MULTI 0x71 #define NAND_CMD_SEQIN 0x80 #define NAND_CMD_READID 0x90 #define NAND_CMD_ERASE2 0xd0 #define NAND_CMD_RESET 0xff +/* Extended commands for large page devices */ +#define NAND_CMD_READSTART 0x30 +#define NAND_CMD_CACHEDPROG 0x15 + +/* Status bits */ +#define NAND_STATUS_FAIL 0x01 +#define NAND_STATUS_FAIL_N1 0x02 +#define NAND_STATUS_TRUE_READY 0x20 +#define NAND_STATUS_READY 0x40 +#define NAND_STATUS_WP 0x80 + +/* + * Constants for ECC_MODES + */ + +/* No ECC. Usage is not recommended ! */ +#define NAND_ECC_NONE 0 +/* Software ECC 3 byte ECC per 256 Byte data */ +#define NAND_ECC_SOFT 1 +/* Hardware ECC 3 byte ECC per 256 Byte data */ +#define NAND_ECC_HW3_256 2 +/* Hardware ECC 3 byte ECC per 512 Byte data */ +#define NAND_ECC_HW3_512 3 +/* Hardware ECC 3 byte ECC per 512 Byte data */ +#define NAND_ECC_HW6_512 4 +/* Hardware ECC 8 byte ECC per 512 Byte data */ +#define NAND_ECC_HW8_512 6 +/* Hardware ECC 12 byte ECC per 2048 Byte data */ +#define NAND_ECC_HW12_2048 7 + /* + * Constants for Hardware ECC +*/ +/* Reset Hardware ECC for read */ +#define NAND_ECC_READ 0 +/* Reset Hardware ECC for write */ +#define NAND_ECC_WRITE 1 +/* Enable Hardware ECC before syndrom is read back from flash */ +#define NAND_ECC_READSYN 2 + +/* Option constants for bizarre disfunctionality and real +* features +*/ +/* Chip can not auto increment pages */ +#define NAND_NO_AUTOINCR 0x00000001 +/* Buswitdh is 16 bit */ +#define NAND_BUSWIDTH_16 0x00000002 +/* Device supports partial programming without padding */ +#define NAND_NO_PADDING 0x00000004 +/* Chip has cache program function */ +#define NAND_CACHEPRG 0x00000008 +/* Chip has copy back function */ +#define NAND_COPYBACK 0x00000010 +/* AND Chip which has 4 banks and a confusing page / block + * assignment. See Renesas datasheet for further information */ +#define NAND_IS_AND 0x00000020 +/* Chip has a array of 4 pages which can be read without + * additional ready /busy waits */ +#define NAND_4PAGE_ARRAY 0x00000040 + +/* Options valid for Samsung large page devices */ +#define NAND_SAMSUNG_LP_OPTIONS \ + (NAND_NO_PADDING | NAND_CACHEPRG | NAND_COPYBACK) + +/* Macros to identify the above */ +#define NAND_CANAUTOINCR(chip) (!(chip->options & NAND_NO_AUTOINCR)) +#define NAND_MUST_PAD(chip) (!(chip->options & NAND_NO_PADDING)) +#define NAND_HAS_CACHEPROG(chip) ((chip->options & NAND_CACHEPRG)) +#define NAND_HAS_COPYBACK(chip) ((chip->options & NAND_COPYBACK)) + +/* Mask to zero out the chip options, which come from the id table */ +#define NAND_CHIPOPTIONS_MSK (0x0000ffff & ~NAND_NO_AUTOINCR) + +/* Non chip related options */ +/* Use a flash based bad block table. This option is passed to the + * default bad block table function. */ +#define NAND_USE_FLASH_BBT 0x00010000 +/* The hw ecc generator provides a syndrome instead a ecc value on read + * This can only work if we have the ecc bytes directly behind the + * data bytes. Applies for DOC and AG-AND Renesas HW Reed Solomon generators */ +#define NAND_HWECC_SYNDROME 0x00020000 + + +/* Options set by nand scan */ +/* Nand scan has allocated oob_buf */ +#define NAND_OOBBUF_ALLOC 0x40000000 +/* Nand scan has allocated data_buf */ +#define NAND_DATABUF_ALLOC 0x80000000 + + +/* + * nand_state_t - chip states * Enumeration for NAND flash chip state */ typedef enum { @@ -58,71 +208,138 @@ typedef enum { FL_READING, FL_WRITING, FL_ERASING, - FL_SYNCING + FL_SYNCING, + FL_CACHEDPRG, } nand_state_t; +/* Keep gcc happy */ +struct nand_chip; -/* - * NAND Private Flash Chip Data - * - * Structure overview: - * - * IO_ADDR - address to access the 8 I/O lines of the flash device - * - * hwcontrol - hardwarespecific function for accesing control-lines - * - * dev_ready - hardwarespecific function for accesing device ready/busy line - * - * chip_lock - spinlock used to protect access to this structure - * - * wq - wait queue to sleep on if a NAND operation is in progress - * - * state - give the current state of the NAND device - * - * page_shift - number of address bits in a page (column address bits) - * - * data_buf - data buffer passed to/from MTD user modules - * - * data_cache - data cache for redundant page access and shadow for - * ECC failure - * - * ecc_code_buf - used only for holding calculated or read ECCs for - * a page read or written when ECC is in use - * - * reserved - padding to make structure fall on word boundary if - * when ECC is in use +#if 0 +/** + * struct nand_hw_control - Control structure for hardware controller (e.g ECC generator) shared among independend devices + * @lock: protection lock + * @active: the mtd device which holds the controller currently */ -struct Nand { - char floor, chip; - unsigned long curadr; - unsigned char curmode; - /* Also some erase/write/pipeline info when we get that far */ +struct nand_hw_control { + spinlock_t lock; + struct nand_chip *active; }; +#endif +/** + * struct nand_chip - NAND Private Flash Chip Data + * @IO_ADDR_R: [BOARDSPECIFIC] address to read the 8 I/O lines of the flash device + * @IO_ADDR_W: [BOARDSPECIFIC] address to write the 8 I/O lines of the flash device + * @read_byte: [REPLACEABLE] read one byte from the chip + * @write_byte: [REPLACEABLE] write one byte to the chip + * @read_word: [REPLACEABLE] read one word from the chip + * @write_word: [REPLACEABLE] write one word to the chip + * @write_buf: [REPLACEABLE] write data from the buffer to the chip + * @read_buf: [REPLACEABLE] read data from the chip into the buffer + * @verify_buf: [REPLACEABLE] verify buffer contents against the chip data + * @select_chip: [REPLACEABLE] select chip nr + * @block_bad: [REPLACEABLE] check, if the block is bad + * @block_markbad: [REPLACEABLE] mark the block bad + * @hwcontrol: [BOARDSPECIFIC] hardwarespecific function for accesing control-lines + * @dev_ready: [BOARDSPECIFIC] hardwarespecific function for accesing device ready/busy line + * If set to NULL no access to ready/busy is available and the ready/busy information + * is read from the chip status register + * @cmdfunc: [REPLACEABLE] hardwarespecific function for writing commands to the chip + * @waitfunc: [REPLACEABLE] hardwarespecific function for wait on ready + * @calculate_ecc: [REPLACEABLE] function for ecc calculation or readback from ecc hardware + * @correct_data: [REPLACEABLE] function for ecc correction, matching to ecc generator (sw/hw) + * @enable_hwecc: [BOARDSPECIFIC] function to enable (reset) hardware ecc generator. Must only + * be provided if a hardware ECC is available + * @erase_cmd: [INTERN] erase command write function, selectable due to AND support + * @scan_bbt: [REPLACEABLE] function to scan bad block table + * @eccmode: [BOARDSPECIFIC] mode of ecc, see defines + * @eccsize: [INTERN] databytes used per ecc-calculation + * @eccbytes: [INTERN] number of ecc bytes per ecc-calculation step + * @eccsteps: [INTERN] number of ecc calculation steps per page + * @chip_delay: [BOARDSPECIFIC] chip dependent delay for transfering data from array to read regs (tR) + * @chip_lock: [INTERN] spinlock used to protect access to this structure and the chip + * @wq: [INTERN] wait queue to sleep on if a NAND operation is in progress + * @state: [INTERN] the current state of the NAND device + * @page_shift: [INTERN] number of address bits in a page (column address bits) + * @phys_erase_shift: [INTERN] number of address bits in a physical eraseblock + * @bbt_erase_shift: [INTERN] number of address bits in a bbt entry + * @chip_shift: [INTERN] number of address bits in one chip + * @data_buf: [INTERN] internal buffer for one page + oob + * @oob_buf: [INTERN] oob buffer for one eraseblock + * @oobdirty: [INTERN] indicates that oob_buf must be reinitialized + * @data_poi: [INTERN] pointer to a data buffer + * @options: [BOARDSPECIFIC] various chip options. They can partly be set to inform nand_scan about + * special functionality. See the defines for further explanation + * @badblockpos: [INTERN] position of the bad block marker in the oob area + * @numchips: [INTERN] number of physical chips + * @chipsize: [INTERN] the size of one chip for multichip arrays + * @pagemask: [INTERN] page number mask = number of (pages / chip) - 1 + * @pagebuf: [INTERN] holds the pagenumber which is currently in data_buf + * @autooob: [REPLACEABLE] the default (auto)placement scheme + * @bbt: [INTERN] bad block table pointer + * @bbt_td: [REPLACEABLE] bad block table descriptor for flash lookup + * @bbt_md: [REPLACEABLE] bad block table mirror descriptor + * @badblock_pattern: [REPLACEABLE] bad block scan pattern used for initial bad block scan + * @controller: [OPTIONAL] a pointer to a hardware controller structure which is shared among multiple independend devices + * @priv: [OPTIONAL] pointer to private chip date + */ + struct nand_chip { + void __iomem *IO_ADDR_R; + void __iomem *IO_ADDR_W; + + u_char (*read_byte)(struct mtd_info *mtd); + void (*write_byte)(struct mtd_info *mtd, u_char byte); + u16 (*read_word)(struct mtd_info *mtd); + void (*write_word)(struct mtd_info *mtd, u16 word); + + void (*write_buf)(struct mtd_info *mtd, const u_char *buf, int len); + void (*read_buf)(struct mtd_info *mtd, u_char *buf, int len); + int (*verify_buf)(struct mtd_info *mtd, const u_char *buf, int len); + void (*select_chip)(struct mtd_info *mtd, int chip); + int (*block_bad)(struct mtd_info *mtd, loff_t ofs, int getchip); + int (*block_markbad)(struct mtd_info *mtd, loff_t ofs); + void (*hwcontrol)(struct mtd_info *mtd, int cmd); + int (*dev_ready)(struct mtd_info *mtd); + void (*cmdfunc)(struct mtd_info *mtd, unsigned command, int column, int page_addr); + int (*waitfunc)(struct mtd_info *mtd, struct nand_chip *this, int state); + int (*calculate_ecc)(struct mtd_info *mtd, const u_char *dat, u_char *ecc_code); + int (*correct_data)(struct mtd_info *mtd, u_char *dat, u_char *read_ecc, u_char *calc_ecc); + void (*enable_hwecc)(struct mtd_info *mtd, int mode); + void (*erase_cmd)(struct mtd_info *mtd, int page); + int (*scan_bbt)(struct mtd_info *mtd); + int eccmode; + int eccsize; + int eccbytes; + int eccsteps; + int chip_delay; +#if 0 + spinlock_t chip_lock; + wait_queue_head_t wq; + nand_state_t state; +#endif int page_shift; + int phys_erase_shift; + int bbt_erase_shift; + int chip_shift; u_char *data_buf; - u_char *data_cache; - int cache_page; - u_char ecc_code_buf[6]; - u_char reserved[2]; - char ChipID; /* Type of DiskOnChip */ - struct Nand *chips; - int chipshift; - char* chips_name; - unsigned long erasesize; - unsigned long mfr; /* Flash IDs - only one type of flash per device */ - unsigned long id; - char* name; - int numchips; - char page256; - char pageadrlen; - unsigned long IO_ADDR; /* address to access the 8 I/O lines to the flash device */ - unsigned long totlen; - uint oobblock; /* Size of OOB blocks (e.g. 512) */ - uint oobsize; /* Amount of OOB data per block (e.g. 16) */ - uint eccsize; - int bus16; + u_char *oob_buf; + int oobdirty; + u_char *data_poi; + unsigned int options; + int badblockpos; + int numchips; + unsigned long chipsize; + int pagemask; + int pagebuf; + struct nand_oobinfo *autooob; + uint8_t *bbt; + struct nand_bbt_descr *bbt_td; + struct nand_bbt_descr *bbt_md; + struct nand_bbt_descr *badblock_pattern; + struct nand_hw_control *controller; + void *priv; }; /* @@ -130,71 +347,125 @@ struct nand_chip { */ #define NAND_MFR_TOSHIBA 0x98 #define NAND_MFR_SAMSUNG 0xec +#define NAND_MFR_FUJITSU 0x04 +#define NAND_MFR_NATIONAL 0x8f +#define NAND_MFR_RENESAS 0x07 +#define NAND_MFR_STMICRO 0x20 -/* - * NAND Flash Device ID Structure - * - * Structure overview: - * - * name - Complete name of device - * - * manufacture_id - manufacturer ID code of device. - * - * model_id - model ID code of device. - * - * chipshift - total number of address bits for the device which - * is used to calculate address offsets and the total - * number of bytes the device is capable of. +/** + * struct nand_flash_dev - NAND Flash Device ID Structure * - * page256 - denotes if flash device has 256 byte pages or not. - * - * pageadrlen - number of bytes minus one needed to hold the - * complete address into the flash array. Keep in - * mind that when a read or write is done to a - * specific address, the address is input serially - * 8 bits at a time. This structure member is used - * by the read/write routines as a loop index for - * shifting the address out 8 bits at a time. - * - * erasesize - size of an erase block in the flash device. + * @name: Identify the device type + * @id: device ID code + * @pagesize: Pagesize in bytes. Either 256 or 512 or 0 + * If the pagesize is 0, then the real pagesize + * and the eraseize are determined from the + * extended id bytes in the chip + * @erasesize: Size of an erase block in the flash device. + * @chipsize: Total chipsize in Mega Bytes + * @options: Bitfield to store chip relevant options */ struct nand_flash_dev { - char * name; - int manufacture_id; - int model_id; - int chipshift; - char page256; - char pageadrlen; + char *name; + int id; + unsigned long pagesize; + unsigned long chipsize; unsigned long erasesize; - int bus16; + unsigned long options; +}; + +/** + * struct nand_manufacturers - NAND Flash Manufacturer ID Structure + * @name: Manufacturer name + * @id: manufacturer ID code of device. +*/ +struct nand_manufacturers { + int id; + char * name; +}; + +extern struct nand_flash_dev nand_flash_ids[]; +extern struct nand_manufacturers nand_manuf_ids[]; + +/** + * struct nand_bbt_descr - bad block table descriptor + * @options: options for this descriptor + * @pages: the page(s) where we find the bbt, used with option BBT_ABSPAGE + * when bbt is searched, then we store the found bbts pages here. + * Its an array and supports up to 8 chips now + * @offs: offset of the pattern in the oob area of the page + * @veroffs: offset of the bbt version counter in the oob are of the page + * @version: version read from the bbt page during scan + * @len: length of the pattern, if 0 no pattern check is performed + * @maxblocks: maximum number of blocks to search for a bbt. This number of + * blocks is reserved at the end of the device where the tables are + * written. + * @reserved_block_code: if non-0, this pattern denotes a reserved (rather than + * bad) block in the stored bbt + * @pattern: pattern to identify bad block table or factory marked good / + * bad blocks, can be NULL, if len = 0 + * + * Descriptor for the bad block table marker and the descriptor for the + * pattern which identifies good and bad blocks. The assumption is made + * that the pattern and the version count are always located in the oob area + * of the first block. + */ +struct nand_bbt_descr { + int options; + int pages[NAND_MAX_CHIPS]; + int offs; + int veroffs; + uint8_t version[NAND_MAX_CHIPS]; + int len; + int maxblocks; + int reserved_block_code; + uint8_t *pattern; }; +/* Options for the bad block table descriptors */ + +/* The number of bits used per block in the bbt on the device */ +#define NAND_BBT_NRBITS_MSK 0x0000000F +#define NAND_BBT_1BIT 0x00000001 +#define NAND_BBT_2BIT 0x00000002 +#define NAND_BBT_4BIT 0x00000004 +#define NAND_BBT_8BIT 0x00000008 +/* The bad block table is in the last good block of the device */ +#define NAND_BBT_LASTBLOCK 0x00000010 +/* The bbt is at the given page, else we must scan for the bbt */ +#define NAND_BBT_ABSPAGE 0x00000020 +/* The bbt is at the given page, else we must scan for the bbt */ +#define NAND_BBT_SEARCH 0x00000040 +/* bbt is stored per chip on multichip devices */ +#define NAND_BBT_PERCHIP 0x00000080 +/* bbt has a version counter at offset veroffs */ +#define NAND_BBT_VERSION 0x00000100 +/* Create a bbt if none axists */ +#define NAND_BBT_CREATE 0x00000200 +/* Search good / bad pattern through all pages of a block */ +#define NAND_BBT_SCANALLPAGES 0x00000400 +/* Scan block empty during good / bad block scan */ +#define NAND_BBT_SCANEMPTY 0x00000800 +/* Write bbt if neccecary */ +#define NAND_BBT_WRITE 0x00001000 +/* Read and write back block contents when writing bbt */ +#define NAND_BBT_SAVECONTENT 0x00002000 +/* Search good / bad pattern on the first and the second page */ +#define NAND_BBT_SCAN2NDPAGE 0x00004000 + +/* The maximum number of blocks to scan for a bbt */ +#define NAND_BBT_SCAN_MAXBLOCKS 4 + +extern int nand_scan_bbt (struct mtd_info *mtd, struct nand_bbt_descr *bd); +extern int nand_update_bbt (struct mtd_info *mtd, loff_t offs); +extern int nand_default_bbt (struct mtd_info *mtd); +extern int nand_isbad_bbt (struct mtd_info *mtd, loff_t offs, int allowbbt); +extern int nand_erase_nand (struct mtd_info *mtd, struct erase_info *instr, int allowbbt); + /* * Constants for oob configuration */ -#define NAND_NOOB_ECCPOS0 0 -#define NAND_NOOB_ECCPOS1 1 -#define NAND_NOOB_ECCPOS2 2 -#define NAND_NOOB_ECCPOS3 3 -#define NAND_NOOB_ECCPOS4 6 -#define NAND_NOOB_ECCPOS5 7 -#define NAND_NOOB_BADBPOS -1 -#define NAND_NOOB_ECCVPOS -1 - -#define NAND_JFFS2_OOB_ECCPOS0 0 -#define NAND_JFFS2_OOB_ECCPOS1 1 -#define NAND_JFFS2_OOB_ECCPOS2 2 -#define NAND_JFFS2_OOB_ECCPOS3 3 -#define NAND_JFFS2_OOB_ECCPOS4 6 -#define NAND_JFFS2_OOB_ECCPOS5 7 -#define NAND_JFFS2_OOB_BADBPOS 5 -#define NAND_JFFS2_OOB_ECCVPOS 4 - -#define NAND_JFFS2_OOB8_FSDAPOS 6 -#define NAND_JFFS2_OOB16_FSDAPOS 8 -#define NAND_JFFS2_OOB8_FSDALEN 2 -#define NAND_JFFS2_OOB16_FSDALEN 8 - -unsigned long nand_probe(unsigned long physadr); +#define NAND_SMALL_BADBLOCK_POS 5 +#define NAND_LARGE_BADBLOCK_POS 0 #endif /* __LINUX_MTD_NAND_H */ diff --git a/include/linux/mtd/nand_ecc.h b/include/linux/mtd/nand_ecc.h new file mode 100644 index 0000000..12c5bc3 --- /dev/null +++ b/include/linux/mtd/nand_ecc.h @@ -0,0 +1,30 @@ +/* + * drivers/mtd/nand_ecc.h + * + * Copyright (C) 2000 Steven J. Hill (sjhill@realitydiluted.com) + * + * $Id: nand_ecc.h,v 1.4 2004/06/17 02:35:02 dbrown Exp $ + * + * This program is free software; you can redistribute it and/or modify + * it under the terms of the GNU General Public License version 2 as + * published by the Free Software Foundation. + * + * This file is the header for the ECC algorithm. + */ + +#ifndef __MTD_NAND_ECC_H__ +#define __MTD_NAND_ECC_H__ + +struct mtd_info; + +/* + * Calculate 3 byte ECC code for 256 byte block + */ +int nand_calculate_ecc(struct mtd_info *mtd, const u_char *dat, u_char *ecc_code); + +/* + * Detect and correct a 1 bit error for 256 byte block + */ +int nand_correct_data(struct mtd_info *mtd, u_char *dat, u_char *read_ecc, u_char *calc_ecc); + +#endif /* __MTD_NAND_ECC_H__ */ diff --git a/include/linux/mtd/nand_ids.h b/include/linux/mtd/nand_ids.h index a3d0363..75c305b 100644 --- a/include/linux/mtd/nand_ids.h +++ b/include/linux/mtd/nand_ids.h @@ -49,6 +49,7 @@ static struct nand_flash_dev nand_flash_ids[] = { {"Samsung KM29W16000", NAND_MFR_SAMSUNG, 0xea, 21, 1, 2, 0x1000, 0}, {"Samsung K9F5616Q0C", NAND_MFR_SAMSUNG, 0x45, 25, 0, 2, 0x4000, 1}, {"Samsung K9K1216Q0C", NAND_MFR_SAMSUNG, 0x46, 26, 0, 3, 0x4000, 1}, + {"Samsung K9F1G08U0M", NAND_MFR_SAMSUNG, 0xf1, 27, 0, 2, 0, 0}, {NULL,} }; -- cgit v1.1 From ac7eb8a315e25863637a8d2c02af18815458b63f Mon Sep 17 00:00:00 2001 From: Wolfgang Denk Date: Wed, 14 Sep 2005 23:53:32 +0200 Subject: Update of new NAND code Patch by Ladislav Michl, 13 Sep 2005 --- include/linux/mtd/mtd-abi.h | 48 ++++++++++++++++++++++----------------------- include/linux/mtd/mtd.h | 34 ++++++++++++++++---------------- include/linux/mtd/nand.h | 44 ++++++++++++++++++++--------------------- 3 files changed, 63 insertions(+), 63 deletions(-) (limited to 'include/linux/mtd') diff --git a/include/linux/mtd/mtd-abi.h b/include/linux/mtd/mtd-abi.h index afe96b5..3d1d416 100644 --- a/include/linux/mtd/mtd-abi.h +++ b/include/linux/mtd/mtd-abi.h @@ -1,7 +1,7 @@ /* * $Id: mtd-abi.h,v 1.7 2004/11/23 15:37:32 gleixner Exp $ * - * Portions of MTD ABI definition which are shared by kernel and user space + * Portions of MTD ABI definition which are shared by kernel and user space */ #ifndef __MTD_ABI_H__ @@ -27,17 +27,17 @@ struct mtd_oob_buf { #define MTD_OTHER 14 #define MTD_UNKNOWN 15 -#define MTD_CLEAR_BITS 1 // Bits can be cleared (flash) -#define MTD_SET_BITS 2 // Bits can be set -#define MTD_ERASEABLE 4 // Has an erase function -#define MTD_WRITEB_WRITEABLE 8 // Direct IO is possible -#define MTD_VOLATILE 16 // Set for RAMs -#define MTD_XIP 32 // eXecute-In-Place possible -#define MTD_OOB 64 // Out-of-band data (NAND flash) -#define MTD_ECC 128 // Device capable of automatic ECC -#define MTD_NO_VIRTBLOCKS 256 // Virtual blocks not allowed +#define MTD_CLEAR_BITS 1 /* Bits can be cleared (flash) */ +#define MTD_SET_BITS 2 /* Bits can be set */ +#define MTD_ERASEABLE 4 /* Has an erase function */ +#define MTD_WRITEB_WRITEABLE 8 /* Direct IO is possible */ +#define MTD_VOLATILE 16 /* Set for RAMs */ +#define MTD_XIP 32 /* eXecute-In-Place possible */ +#define MTD_OOB 64 /* Out-of-band data (NAND flash) */ +#define MTD_ECC 128 /* Device capable of automatic ECC */ +#define MTD_NO_VIRTBLOCKS 256 /* Virtual blocks not allowed */ -// Some common devices / combinations of capabilities +/* Some common devices / combinations of capabilities */ #define MTD_CAP_ROM 0 #define MTD_CAP_RAM (MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE) #define MTD_CAP_NORFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE) @@ -45,31 +45,31 @@ struct mtd_oob_buf { #define MTD_WRITEABLE (MTD_CLEAR_BITS|MTD_SET_BITS) -// Types of automatic ECC/Checksum available -#define MTD_ECC_NONE 0 // No automatic ECC available -#define MTD_ECC_RS_DiskOnChip 1 // Automatic ECC on DiskOnChip -#define MTD_ECC_SW 2 // SW ECC for Toshiba & Samsung devices +/* Types of automatic ECC/Checksum available */ +#define MTD_ECC_NONE 0 /* No automatic ECC available */ +#define MTD_ECC_RS_DiskOnChip 1 /* Automatic ECC on DiskOnChip */ +#define MTD_ECC_SW 2 /* SW ECC for Toshiba & Samsung devices */ /* ECC byte placement */ -#define MTD_NANDECC_OFF 0 // Switch off ECC (Not recommended) -#define MTD_NANDECC_PLACE 1 // Use the given placement in the structure (YAFFS1 legacy mode) -#define MTD_NANDECC_AUTOPLACE 2 // Use the default placement scheme -#define MTD_NANDECC_PLACEONLY 3 // Use the given placement in the structure (Do not store ecc result on read) -#define MTD_NANDECC_AUTOPL_USR 4 // Use the given autoplacement scheme rather than using the default +#define MTD_NANDECC_OFF 0 /* Switch off ECC (Not recommended) */ +#define MTD_NANDECC_PLACE 1 /* Use the given placement in the structure (YAFFS1 legacy mode) */ +#define MTD_NANDECC_AUTOPLACE 2 /* Use the default placement scheme */ +#define MTD_NANDECC_PLACEONLY 3 /* Use the given placement in the structure (Do not store ecc result on read) */ +#define MTD_NANDECC_AUTOPL_USR 4 /* Use the given autoplacement scheme rather than using the default */ struct mtd_info_user { uint8_t type; uint32_t flags; - uint32_t size; // Total size of the MTD + uint32_t size; /* Total size of the MTD */ uint32_t erasesize; - uint32_t oobblock; // Size of OOB blocks (e.g. 512) - uint32_t oobsize; // Amount of OOB data per block (e.g. 16) + uint32_t oobblock; /* Size of OOB blocks (e.g. 512) */ + uint32_t oobsize; /* Amount of OOB data per block (e.g. 16) */ uint32_t ecctype; uint32_t eccsize; }; struct region_info_user { - uint32_t offset; /* At which this region starts, + uint32_t offset; /* At which this region starts, * from the beginning of the MTD */ uint32_t erasesize; /* For this region */ uint32_t numblocks; /* Number of blocks in this region */ diff --git a/include/linux/mtd/mtd.h b/include/linux/mtd/mtd.h index 9ef4cce..13e9080 100644 --- a/include/linux/mtd/mtd.h +++ b/include/linux/mtd/mtd.h @@ -1,4 +1,4 @@ -/* +/* * $Id: mtd.h,v 1.56 2004/08/09 18:46:04 dmarlin Exp $ * * Copyright (C) 1999-2003 David Woodhouse et al. @@ -46,7 +46,7 @@ struct mtd_erase_region_info { struct mtd_info { u_char type; u_int32_t flags; - u_int32_t size; // Total size of the MTD + u_int32_t size; /* Total size of the MTD */ /* "Major" erase size for the device. Naïve users may take this * to be the only erase size available, or may use the more detailed @@ -54,25 +54,25 @@ struct mtd_info { */ u_int32_t erasesize; - u_int32_t oobblock; // Size of OOB blocks (e.g. 512) - u_int32_t oobsize; // Amount of OOB data per block (e.g. 16) - u_int32_t oobavail; // Number of bytes in OOB area available for fs + u_int32_t oobblock; /* Size of OOB blocks (e.g. 512) */ + u_int32_t oobsize; /* Amount of OOB data per block (e.g. 16) */ + u_int32_t oobavail; /* Number of bytes in OOB area available for fs */ u_int32_t ecctype; u_int32_t eccsize; - - // Kernel-only stuff starts here. + + /* Kernel-only stuff starts here. */ char *name; int index; - // oobinfo is a nand_oobinfo structure, which can be set by iotcl (MEMSETOOBINFO) + /* oobinfo is a nand_oobinfo structure, which can be set by iotcl (MEMSETOOBINFO) */ struct nand_oobinfo oobinfo; /* Data for variable erase regions. If numeraseregions is zero, - * it means that the whole device has erasesize as given above. + * it means that the whole device has erasesize as given above. */ int numeraseregions; - struct mtd_erase_region_info *eraseregions; + struct mtd_erase_region_info *eraseregions; /* This really shouldn't be here. It can go away in 2.5 */ u_int32_t bank_size; @@ -95,10 +95,10 @@ struct mtd_info { int (*read_oob) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf); int (*write_oob) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf); - /* - * Methods to access the protection register area, present in some + /* + * Methods to access the protection register area, present in some * flash devices. The user data is one time programmable but the - * factory data is read only. + * factory data is read only. */ int (*read_user_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf); @@ -109,14 +109,14 @@ struct mtd_info { #if 0 /* kvec-based read/write methods. We need these especially for NAND flash, with its limited number of write cycles per erase. - NB: The 'count' parameter is the number of _vectors_, each of + NB: The 'count' parameter is the number of _vectors_, each of which contains an (ofs, len) tuple. */ int (*readv) (struct mtd_info *mtd, struct kvec *vecs, unsigned long count, loff_t from, size_t *retlen); - int (*readv_ecc) (struct mtd_info *mtd, struct kvec *vecs, unsigned long count, loff_t from, + int (*readv_ecc) (struct mtd_info *mtd, struct kvec *vecs, unsigned long count, loff_t from, size_t *retlen, u_char *eccbuf, struct nand_oobinfo *oobsel); int (*writev) (struct mtd_info *mtd, const struct kvec *vecs, unsigned long count, loff_t to, size_t *retlen); - int (*writev_ecc) (struct mtd_info *mtd, const struct kvec *vecs, unsigned long count, loff_t to, + int (*writev_ecc) (struct mtd_info *mtd, const struct kvec *vecs, unsigned long count, loff_t to, size_t *retlen, u_char *eccbuf, struct nand_oobinfo *oobsel); #endif /* Sync */ @@ -179,7 +179,7 @@ int default_mtd_readv(struct mtd_info *mtd, struct kvec *vecs, #define MTD_WRITEECC(mtd, args...) (*(mtd->write_ecc))(mtd, args) #define MTD_READOOB(mtd, args...) (*(mtd->read_oob))(mtd, args) #define MTD_WRITEOOB(mtd, args...) (*(mtd->write_oob))(mtd, args) -#define MTD_SYNC(mtd) do { if (mtd->sync) (*(mtd->sync))(mtd); } while (0) +#define MTD_SYNC(mtd) do { if (mtd->sync) (*(mtd->sync))(mtd); } while (0) #ifdef CONFIG_MTD_PARTITIONS diff --git a/include/linux/mtd/nand.h b/include/linux/mtd/nand.h index 9a0108f..065e1cb 100644 --- a/include/linux/mtd/nand.h +++ b/include/linux/mtd/nand.h @@ -24,7 +24,7 @@ * bat later if I did something naughty. * 10-11-2000 SJH Added private NAND flash structure for driver * 10-24-2000 SJH Added prototype for 'nand_scan' function - * 10-29-2001 TG changed nand_chip structure to support + * 10-29-2001 TG changed nand_chip structure to support * hardwarespecific function for accessing control lines * 02-21-2002 TG added support for different read/write adress and * ready/busy line access function @@ -36,14 +36,14 @@ * CONFIG_MTD_NAND_ECC_JFFS2 is not set * 08-10-2002 TG extensions to nand_chip structure to support HW-ECC * - * 08-29-2002 tglx nand_chip structure: data_poi for selecting + * 08-29-2002 tglx nand_chip structure: data_poi for selecting * internal / fs-driver buffer * support for 6byte/512byte hardware ECC * read_ecc, write_ecc extended for different oob-layout * oob layout selections: NAND_NONE_OOB, NAND_JFFS2_OOB, * NAND_YAFFS_OOB * 11-25-2002 tglx Added Manufacturer code FUJITSU, NATIONAL - * Split manufacturer and device ID structures + * Split manufacturer and device ID structures * * 02-08-2004 tglx added option field to nand structure for chip anomalities * 05-25-2004 tglx added bad block table support, ST-MICRO manufacturer id @@ -120,7 +120,7 @@ extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_ #define NAND_STATUS_READY 0x40 #define NAND_STATUS_WP 0x80 -/* +/* * Constants for ECC_MODES */ @@ -162,12 +162,12 @@ extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_ #define NAND_CACHEPRG 0x00000008 /* Chip has copy back function */ #define NAND_COPYBACK 0x00000010 -/* AND Chip which has 4 banks and a confusing page / block +/* AND Chip which has 4 banks and a confusing page / block * assignment. See Renesas datasheet for further information */ #define NAND_IS_AND 0x00000020 /* Chip has a array of 4 pages which can be read without * additional ready /busy waits */ -#define NAND_4PAGE_ARRAY 0x00000040 +#define NAND_4PAGE_ARRAY 0x00000040 /* Options valid for Samsung large page devices */ #define NAND_SAMSUNG_LP_OPTIONS \ @@ -186,8 +186,8 @@ extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_ /* Use a flash based bad block table. This option is passed to the * default bad block table function. */ #define NAND_USE_FLASH_BBT 0x00010000 -/* The hw ecc generator provides a syndrome instead a ecc value on read - * This can only work if we have the ecc bytes directly behind the +/* The hw ecc generator provides a syndrome instead a ecc value on read + * This can only work if we have the ecc bytes directly behind the * data bytes. Applies for DOC and AG-AND Renesas HW Reed Solomon generators */ #define NAND_HWECC_SYNDROME 0x00020000 @@ -218,7 +218,7 @@ struct nand_chip; #if 0 /** * struct nand_hw_control - Control structure for hardware controller (e.g ECC generator) shared among independend devices - * @lock: protection lock + * @lock: protection lock * @active: the mtd device which holds the controller currently */ struct nand_hw_control { @@ -229,8 +229,8 @@ struct nand_hw_control { /** * struct nand_chip - NAND Private Flash Chip Data - * @IO_ADDR_R: [BOARDSPECIFIC] address to read the 8 I/O lines of the flash device - * @IO_ADDR_W: [BOARDSPECIFIC] address to write the 8 I/O lines of the flash device + * @IO_ADDR_R: [BOARDSPECIFIC] address to read the 8 I/O lines of the flash device + * @IO_ADDR_W: [BOARDSPECIFIC] address to write the 8 I/O lines of the flash device * @read_byte: [REPLACEABLE] read one byte from the chip * @write_byte: [REPLACEABLE] write one byte to the chip * @read_word: [REPLACEABLE] read one word from the chip @@ -253,7 +253,7 @@ struct nand_hw_control { * be provided if a hardware ECC is available * @erase_cmd: [INTERN] erase command write function, selectable due to AND support * @scan_bbt: [REPLACEABLE] function to scan bad block table - * @eccmode: [BOARDSPECIFIC] mode of ecc, see defines + * @eccmode: [BOARDSPECIFIC] mode of ecc, see defines * @eccsize: [INTERN] databytes used per ecc-calculation * @eccbytes: [INTERN] number of ecc bytes per ecc-calculation step * @eccsteps: [INTERN] number of ecc calculation steps per page @@ -265,7 +265,7 @@ struct nand_hw_control { * @phys_erase_shift: [INTERN] number of address bits in a physical eraseblock * @bbt_erase_shift: [INTERN] number of address bits in a bbt entry * @chip_shift: [INTERN] number of address bits in one chip - * @data_buf: [INTERN] internal buffer for one page + oob + * @data_buf: [INTERN] internal buffer for one page + oob * @oob_buf: [INTERN] oob buffer for one eraseblock * @oobdirty: [INTERN] indicates that oob_buf must be reinitialized * @data_poi: [INTERN] pointer to a data buffer @@ -280,20 +280,20 @@ struct nand_hw_control { * @bbt: [INTERN] bad block table pointer * @bbt_td: [REPLACEABLE] bad block table descriptor for flash lookup * @bbt_md: [REPLACEABLE] bad block table mirror descriptor - * @badblock_pattern: [REPLACEABLE] bad block scan pattern used for initial bad block scan + * @badblock_pattern: [REPLACEABLE] bad block scan pattern used for initial bad block scan * @controller: [OPTIONAL] a pointer to a hardware controller structure which is shared among multiple independend devices * @priv: [OPTIONAL] pointer to private chip date */ - + struct nand_chip { void __iomem *IO_ADDR_R; void __iomem *IO_ADDR_W; - + u_char (*read_byte)(struct mtd_info *mtd); void (*write_byte)(struct mtd_info *mtd, u_char byte); u16 (*read_word)(struct mtd_info *mtd); void (*write_word)(struct mtd_info *mtd, u16 word); - + void (*write_buf)(struct mtd_info *mtd, const u_char *buf, int len); void (*read_buf)(struct mtd_info *mtd, u_char *buf, int len); int (*verify_buf)(struct mtd_info *mtd, const u_char *buf, int len); @@ -358,7 +358,7 @@ struct nand_chip { * @name: Identify the device type * @id: device ID code * @pagesize: Pagesize in bytes. Either 256 or 512 or 0 - * If the pagesize is 0, then the real pagesize + * If the pagesize is 0, then the real pagesize * and the eraseize are determined from the * extended id bytes in the chip * @erasesize: Size of an erase block in the flash device. @@ -387,7 +387,7 @@ struct nand_manufacturers { extern struct nand_flash_dev nand_flash_ids[]; extern struct nand_manufacturers nand_manuf_ids[]; -/** +/** * struct nand_bbt_descr - bad block table descriptor * @options: options for this descriptor * @pages: the page(s) where we find the bbt, used with option BBT_ABSPAGE @@ -398,14 +398,14 @@ extern struct nand_manufacturers nand_manuf_ids[]; * @version: version read from the bbt page during scan * @len: length of the pattern, if 0 no pattern check is performed * @maxblocks: maximum number of blocks to search for a bbt. This number of - * blocks is reserved at the end of the device where the tables are + * blocks is reserved at the end of the device where the tables are * written. * @reserved_block_code: if non-0, this pattern denotes a reserved (rather than * bad) block in the stored bbt - * @pattern: pattern to identify bad block table or factory marked good / + * @pattern: pattern to identify bad block table or factory marked good / * bad blocks, can be NULL, if len = 0 * - * Descriptor for the bad block table marker and the descriptor for the + * Descriptor for the bad block table marker and the descriptor for the * pattern which identifies good and bad blocks. The assumption is made * that the pattern and the version count are always located in the oob area * of the first block. -- cgit v1.1