From 7922a2d479b6cdce853b853b80d94675b955a66a Mon Sep 17 00:00:00 2001 From: Minkyu Kang Date: Fri, 13 Jun 2014 17:00:56 +0900 Subject: Revert "exynos: Enable PSHOLD in SPL" This reverts commit eb0dd9986c3883820ff888c3738b013c0a7d918c. --- arch/arm/cpu/armv7/exynos/lowlevel_init.c | 2 -- 1 file changed, 2 deletions(-) (limited to 'arch/arm/cpu/armv7') diff --git a/arch/arm/cpu/armv7/exynos/lowlevel_init.c b/arch/arm/cpu/armv7/exynos/lowlevel_init.c index dcc270f..83e1dcf 100644 --- a/arch/arm/cpu/armv7/exynos/lowlevel_init.c +++ b/arch/arm/cpu/armv7/exynos/lowlevel_init.c @@ -49,8 +49,6 @@ int do_lowlevel_init(void) arch_cpu_init(); - set_ps_hold_ctrl(); - reset_status = get_reset_status(); switch (reset_status) { -- cgit v1.1 From cfde7588d8ad22560e2328574a4f415642170b92 Mon Sep 17 00:00:00 2001 From: Akshay Saraswat Date: Mon, 26 May 2014 19:17:03 +0530 Subject: Exynos5: DMC: Modify the definition of ddr3_mem_ctrl_init Passing fewer arguments is better and mem_iv_size is never used. Let's keep only one argument and make it cleaner. Signed-off-by: Hatim Ali Signed-off-by: Akshay Saraswat Acked-by: Simon Glass Signed-off-by: Minkyu Kang --- arch/arm/cpu/armv7/exynos/dmc_common.c | 2 +- arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c | 7 ++----- arch/arm/cpu/armv7/exynos/exynos5_setup.h | 9 ++------- 3 files changed, 5 insertions(+), 13 deletions(-) (limited to 'arch/arm/cpu/armv7') diff --git a/arch/arm/cpu/armv7/exynos/dmc_common.c b/arch/arm/cpu/armv7/exynos/dmc_common.c index cca925e..9b6ee69 100644 --- a/arch/arm/cpu/armv7/exynos/dmc_common.c +++ b/arch/arm/cpu/armv7/exynos/dmc_common.c @@ -162,7 +162,7 @@ void mem_ctrl_init(int reset) /* If there are any other memory variant, add their init call below */ if (param->mem_type == DDR_MODE_DDR3) { - ret = ddr3_mem_ctrl_init(mem, param->mem_iv_size, reset); + ret = ddr3_mem_ctrl_init(mem, reset); if (ret) { /* will hang if failed to init memory control */ while (1) diff --git a/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c b/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c index 487e6f4..4481ab4 100644 --- a/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c +++ b/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c @@ -28,8 +28,7 @@ static void reset_phy_ctrl(void) writel(DDR3PHY_CTRL_PHY_RESET, &clk->lpddr3phy_ctrl); } -int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, - int reset) +int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) { unsigned int val; struct exynos5_phy_control *phy0_ctrl, *phy1_ctrl; @@ -221,8 +220,7 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, #endif #ifdef CONFIG_EXYNOS5420 -int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, - int reset) +int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) { struct exynos5420_clock *clk = (struct exynos5420_clock *)samsung_get_base_clock(); @@ -244,7 +242,6 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, tzasc0 = (struct exynos5420_tzasc *)samsung_get_base_dmc_tzasc(); tzasc1 = (struct exynos5420_tzasc *)(samsung_get_base_dmc_tzasc() + DMC_OFFSET); - /* Enable PAUSE for DREX */ setbits_le32(&clk->pause, ENABLE_BIT); diff --git a/arch/arm/cpu/armv7/exynos/exynos5_setup.h b/arch/arm/cpu/armv7/exynos/exynos5_setup.h index 53b0ace..314d6f4 100644 --- a/arch/arm/cpu/armv7/exynos/exynos5_setup.h +++ b/arch/arm/cpu/armv7/exynos/exynos5_setup.h @@ -890,16 +890,11 @@ enum { /* * Memory variant specific initialization code for DDR3 * - * @param mem Memory timings for this memory type. - * @param mem_iv_size Memory interleaving size is a configurable parameter - * which the DMC uses to decide how to split a memory - * chunk into smaller chunks to support concurrent - * accesses; may vary across boards. + * @param mem Memory timings for this memory type. * @param reset Reset DDR PHY during initialization. * @return 0 if ok, SETUP_ERR_... if there is a problem */ -int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, - int reset); +int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset); /* Memory variant specific initialization code for LPDDR3 */ void lpddr3_mem_ctrl_init(void); -- cgit v1.1 From aacdd79095b0a7c258a76e4fdfc133af16b07dc0 Mon Sep 17 00:00:00 2001 From: Akshay Saraswat Date: Mon, 26 May 2014 19:18:06 +0530 Subject: Exynos5420: Remove code for enabling read leveling This patch intends to remove all code which enables hardware read leveling. All characterization environments may not cope up with h/w read leveling enabled, so we must disable this. Also, disabling h/w read leveling improves the MIF LVcc value (LVcc value is the value at which DDR will fail to work properly). Improving LVcc means we have enough voltage margin for MIF. When h/w leveling is enabled, we have almost zero volatge margin. Signed-off-by: Alim Akhtar Signed-off-by: Akshay Saraswat Acked-by: Simon Glass Tested-by: Simon Glass Signed-off-by: Minkyu Kang --- arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c | 71 ------------------------------- 1 file changed, 71 deletions(-) (limited to 'arch/arm/cpu/armv7') diff --git a/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c b/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c index 4481ab4..1d6048c 100644 --- a/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c +++ b/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c @@ -519,77 +519,6 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) &drex1->directcmd); } - if (mem->read_leveling_enable) { - /* Set Read DQ Calibration */ - val = (0x3 << DIRECT_CMD_BANK_SHIFT) | 0x4; - for (chip = 0; chip < mem->chips_to_configure; chip++) { - writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), - &drex0->directcmd); - writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), - &drex1->directcmd); - } - - val = readl(&phy0_ctrl->phy_con1); - val |= READ_LEVELLING_DDR3; - writel(val, &phy0_ctrl->phy_con1); - val = readl(&phy1_ctrl->phy_con1); - val |= READ_LEVELLING_DDR3; - writel(val, &phy1_ctrl->phy_con1); - - val = readl(&phy0_ctrl->phy_con2); - val |= (RDLVL_EN | RDLVL_INCR_ADJ); - writel(val, &phy0_ctrl->phy_con2); - val = readl(&phy1_ctrl->phy_con2); - val |= (RDLVL_EN | RDLVL_INCR_ADJ); - writel(val, &phy1_ctrl->phy_con2); - - setbits_le32(&drex0->rdlvl_config, - CTRL_RDLVL_DATA_ENABLE); - i = TIMEOUT; - while (((readl(&drex0->phystatus) & RDLVL_COMPLETE_CHO) - != RDLVL_COMPLETE_CHO) && (i > 0)) { - /* - * TODO(waihong): Comment on how long this take - * to timeout - */ - sdelay(100); - i--; - } - if (!i) - return SETUP_ERR_RDLV_COMPLETE_TIMEOUT; - - clrbits_le32(&drex0->rdlvl_config, - CTRL_RDLVL_DATA_ENABLE); - setbits_le32(&drex1->rdlvl_config, - CTRL_RDLVL_DATA_ENABLE); - i = TIMEOUT; - while (((readl(&drex1->phystatus) & RDLVL_COMPLETE_CHO) - != RDLVL_COMPLETE_CHO) && (i > 0)) { - /* - * TODO(waihong): Comment on how long this take - * to timeout - */ - sdelay(100); - i--; - } - if (!i) - return SETUP_ERR_RDLV_COMPLETE_TIMEOUT; - - clrbits_le32(&drex1->rdlvl_config, - CTRL_RDLVL_DATA_ENABLE); - - val = (0x3 << DIRECT_CMD_BANK_SHIFT); - for (chip = 0; chip < mem->chips_to_configure; chip++) { - writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), - &drex0->directcmd); - writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), - &drex1->directcmd); - } - - update_reset_dll(&drex0->phycontrol0, DDR_MODE_DDR3); - update_reset_dll(&drex1->phycontrol0, DDR_MODE_DDR3); - } - /* Common Settings for Leveling */ val = PHY_CON12_RESET_VAL; writel((val + n_lock_w_phy0), &phy0_ctrl->phy_con12); -- cgit v1.1 From c9334fcda90652e2f8c49f4517b728ebc6f5f623 Mon Sep 17 00:00:00 2001 From: Doug Anderson Date: Mon, 26 May 2014 19:19:05 +0530 Subject: DMC: exynos5420: Gate CLKM to when reading PHY_CON13 when CLKM is running. If we stop CLKM when sampling it the glitches all go away, so we'll do that as per Samsung suggestion. We also check the "is it locked" bits of PHY_CON13 and loop until they show the the value sampled actually represents a locked value. It doesn't appear that the glitching and "is it locked" are related, but it seems wise to wait until the PHY tells us the value is good before we use it. In practice we will not loop more than a couple times (and usually won't loop at all). Signed-off-by: Doug Anderson Signed-off-by: Akshay Saraswat Acked-by: Simon Glass Tested-by: Simon Glass Signed-off-by: Minkyu Kang --- arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c | 43 +++++++++++++++++++++++++++---- arch/arm/cpu/armv7/exynos/exynos5_setup.h | 1 + 2 files changed, 39 insertions(+), 5 deletions(-) (limited to 'arch/arm/cpu/armv7') diff --git a/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c b/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c index 1d6048c..13003b8 100644 --- a/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c +++ b/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c @@ -230,6 +230,7 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) struct exynos5420_dmc *drex0, *drex1; struct exynos5420_tzasc *tzasc0, *tzasc1; uint32_t val, n_lock_r, n_lock_w_phy0, n_lock_w_phy1; + uint32_t lock0_info, lock1_info; int chip; int i; @@ -391,7 +392,41 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) */ dmc_config_mrs(mem, &drex0->directcmd); dmc_config_mrs(mem, &drex1->directcmd); - } else { + } + + /* + * Get PHY_CON13 from both phys. Gate CLKM around reading since + * PHY_CON13 is glitchy when CLKM is running. We're paranoid and + * wait until we get a "fine lock", though a coarse lock is probably + * OK (we only use the coarse numbers below). We try to gate the + * clock for as short a time as possible in case SDRAM is somehow + * sensitive. sdelay(10) in the loop is arbitrary to make sure + * there is some time for PHY_CON13 to get updated. In practice + * no delay appears to be needed. + */ + val = readl(&clk->gate_bus_cdrex); + while (true) { + writel(val & ~0x1, &clk->gate_bus_cdrex); + lock0_info = readl(&phy0_ctrl->phy_con13); + writel(val, &clk->gate_bus_cdrex); + + if ((lock0_info & CTRL_FINE_LOCKED) == CTRL_FINE_LOCKED) + break; + + sdelay(10); + } + while (true) { + writel(val & ~0x2, &clk->gate_bus_cdrex); + lock1_info = readl(&phy1_ctrl->phy_con13); + writel(val, &clk->gate_bus_cdrex); + + if ((lock1_info & CTRL_FINE_LOCKED) == CTRL_FINE_LOCKED) + break; + + sdelay(10); + } + + if (!reset) { /* * During Suspend-Resume & S/W-Reset, as soon as PMU releases * pad retention, CKE goes high. This causes memory contents @@ -442,15 +477,13 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) val |= (RDLVL_PASS_ADJ_VAL << RDLVL_PASS_ADJ_OFFSET); writel(val, &phy1_ctrl->phy_con1); - n_lock_r = readl(&phy0_ctrl->phy_con13); - n_lock_w_phy0 = (n_lock_r & CTRL_LOCK_COARSE_MASK) >> 2; + n_lock_w_phy0 = (lock0_info & CTRL_LOCK_COARSE_MASK) >> 2; n_lock_r = readl(&phy0_ctrl->phy_con12); n_lock_r &= ~CTRL_DLL_ON; n_lock_r |= n_lock_w_phy0; writel(n_lock_r, &phy0_ctrl->phy_con12); - n_lock_r = readl(&phy1_ctrl->phy_con13); - n_lock_w_phy1 = (n_lock_r & CTRL_LOCK_COARSE_MASK) >> 2; + n_lock_w_phy1 = (lock1_info & CTRL_LOCK_COARSE_MASK) >> 2; n_lock_r = readl(&phy1_ctrl->phy_con12); n_lock_r &= ~CTRL_DLL_ON; n_lock_r |= n_lock_w_phy1; diff --git a/arch/arm/cpu/armv7/exynos/exynos5_setup.h b/arch/arm/cpu/armv7/exynos/exynos5_setup.h index 314d6f4..d415c91 100644 --- a/arch/arm/cpu/armv7/exynos/exynos5_setup.h +++ b/arch/arm/cpu/armv7/exynos/exynos5_setup.h @@ -284,6 +284,7 @@ #define CTRL_DLL_ON (1 << 5) #define CTRL_FORCE_MASK (0x7F << 8) #define CTRL_LOCK_COARSE_MASK (0x7F << 10) +#define CTRL_FINE_LOCKED 0x7 #define CTRL_OFFSETD_RESET_VAL 0x8 #define CTRL_OFFSETD_VAL 0x7F -- cgit v1.1 From ed32522fe048f9edcb3269c8d5af79c6e8c6daea Mon Sep 17 00:00:00 2001 From: Akshay Saraswat Date: Mon, 26 May 2014 19:20:08 +0530 Subject: Exynos5420: DMC: Add software read leveling Sometimes Read DQ and DQS are not in phase. Since, this phase shift differs from board to board, we need to calibrate it at DRAM init phase, that's read DQ calibration. This patch adds SW Read DQ calibration routine to compensate this skew. Signed-off-by: Alim Akhtar Signed-off-by: Akshay Saraswat Acked-by: Simon Glass Signed-off-by: Minkyu Kang --- arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c | 250 +++++++++++++++++++++++++++++- arch/arm/cpu/armv7/exynos/exynos5_setup.h | 5 +- 2 files changed, 250 insertions(+), 5 deletions(-) (limited to 'arch/arm/cpu/armv7') diff --git a/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c b/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c index 13003b8..b86dd2d 100644 --- a/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c +++ b/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c @@ -6,6 +6,7 @@ * SPDX-License-Identifier: GPL-2.0+ */ +#include #include #include #include @@ -16,7 +17,11 @@ #include "exynos5_setup.h" #include "clock_init.h" -#define TIMEOUT 10000 +#define TIMEOUT_US 10000 +#define NUM_BYTE_LANES 4 +#define DEFAULT_DQS 8 +#define DEFAULT_DQS_X4 (DEFAULT_DQS << 24) || (DEFAULT_DQS << 16) \ + || (DEFAULT_DQS << 8) || (DEFAULT_DQS << 0) #ifdef CONFIG_EXYNOS5250 static void reset_phy_ctrl(void) @@ -176,7 +181,7 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) writel(val, &phy1_ctrl->phy_con1); writel(CTRL_RDLVL_GATE_ENABLE, &dmc->rdlvl_config); - i = TIMEOUT; + i = TIMEOUT_US; while ((readl(&dmc->phystatus) & (RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1)) != (RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1) && i > 0) { @@ -220,6 +225,219 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) #endif #ifdef CONFIG_EXYNOS5420 +/** + * RAM address to use in the test. + * + * We'll use 4 words at this address and 4 at this address + 0x80 (Ares + * interleaves channels every 128 bytes). This will allow us to evaluate all of + * the chips in a 1 chip per channel (2GB) system and half the chips in a 2 + * chip per channel (4GB) system. We can't test the 2nd chip since we need to + * do tests before the 2nd chip is enabled. Looking at the 2nd chip isn't + * critical because the 1st and 2nd chip have very similar timings (they'd + * better have similar timings, since there's only a single adjustment that is + * shared by both chips). + */ +const unsigned int test_addr = CONFIG_SYS_SDRAM_BASE; + +/* Test pattern with which RAM will be tested */ +static const unsigned int test_pattern[] = { + 0x5a5a5a5a, + 0xa5a5a5a5, + 0xf0f0f0f0, + 0x0f0f0f0f, +}; + +/** + * This function is a test vector for sw read leveling, + * it compares the read data with the written data. + * + * @param ch DMC channel number + * @param byte_lane which DQS byte offset, + * possible values are 0,1,2,3 + * @return TRUE if memory was good, FALSE if not. + */ +static bool dmc_valid_window_test_vector(int ch, int byte_lane) +{ + unsigned int read_data; + unsigned int mask; + int i; + + mask = 0xFF << (8 * byte_lane); + + for (i = 0; i < ARRAY_SIZE(test_pattern); i++) { + read_data = readl(test_addr + i * 4 + ch * 0x80); + if ((read_data & mask) != (test_pattern[i] & mask)) + return false; + } + + return true; +} + +/** + * This function returns current read offset value. + * + * @param phy_ctrl pointer to the current phy controller + */ +static unsigned int dmc_get_read_offset_value(struct exynos5420_phy_control + *phy_ctrl) +{ + return readl(&phy_ctrl->phy_con4); +} + +/** + * This function performs resync, so that slave DLL is updated. + * + * @param phy_ctrl pointer to the current phy controller + */ +static void ddr_phy_set_do_resync(struct exynos5420_phy_control *phy_ctrl) +{ + setbits_le32(&phy_ctrl->phy_con10, PHY_CON10_CTRL_OFFSETR3); + clrbits_le32(&phy_ctrl->phy_con10, PHY_CON10_CTRL_OFFSETR3); +} + +/** + * This function sets read offset value register with 'offset'. + * + * ...we also call call ddr_phy_set_do_resync(). + * + * @param phy_ctrl pointer to the current phy controller + * @param offset offset to read DQS + */ +static void dmc_set_read_offset_value(struct exynos5420_phy_control *phy_ctrl, + unsigned int offset) +{ + writel(offset, &phy_ctrl->phy_con4); + ddr_phy_set_do_resync(phy_ctrl); +} + +/** + * Convert a 2s complement byte to a byte with a sign bit. + * + * NOTE: you shouldn't use normal math on the number returned by this function. + * As an example, -10 = 0xf6. After this function -10 = 0x8a. If you wanted + * to do math and get the average of 10 and -10 (should be 0): + * 0x8a + 0xa = 0x94 (-108) + * 0x94 / 2 = 0xca (-54) + * ...and 0xca = sign bit plus 0x4a, or -74 + * + * Also note that you lose the ability to represent -128 since there are two + * representations of 0. + * + * @param b The byte to convert in two's complement. + * @return The 7-bit value + sign bit. + */ + +unsigned char make_signed_byte(signed char b) +{ + if (b < 0) + return 0x80 | -b; + else + return b; +} + +/** + * Test various shifts starting at 'start' and going to 'end'. + * + * For each byte lane, we'll walk through shift starting at 'start' and going + * to 'end' (inclusive). When we are finally able to read the test pattern + * we'll store the value in the results array. + * + * @param phy_ctrl pointer to the current phy controller + * @param ch channel number + * @param start the start shift. -127 to 127 + * @param end the end shift. -127 to 127 + * @param results we'll store results for each byte lane. + */ + +void test_shifts(struct exynos5420_phy_control *phy_ctrl, int ch, + int start, int end, int results[NUM_BYTE_LANES]) +{ + int incr = (start < end) ? 1 : -1; + int byte_lane; + + for (byte_lane = 0; byte_lane < NUM_BYTE_LANES; byte_lane++) { + int shift; + + dmc_set_read_offset_value(phy_ctrl, DEFAULT_DQS_X4); + results[byte_lane] = DEFAULT_DQS; + + for (shift = start; shift != (end + incr); shift += incr) { + unsigned int byte_offsetr; + unsigned int offsetr; + + byte_offsetr = make_signed_byte(shift); + + offsetr = dmc_get_read_offset_value(phy_ctrl); + offsetr &= ~(0xFF << (8 * byte_lane)); + offsetr |= (byte_offsetr << (8 * byte_lane)); + dmc_set_read_offset_value(phy_ctrl, offsetr); + + if (dmc_valid_window_test_vector(ch, byte_lane)) { + results[byte_lane] = shift; + break; + } + } + } +} + +/** + * This function performs SW read leveling to compensate DQ-DQS skew at + * receiver it first finds the optimal read offset value on each DQS + * then applies the value to PHY. + * + * Read offset value has its min margin and max margin. If read offset + * value exceeds its min or max margin, read data will have corruption. + * To avoid this we are doing sw read leveling. + * + * SW read leveling is: + * 1> Finding offset value's left_limit and right_limit + * 2> and calculate its center value + * 3> finally programs that center value to PHY + * 4> then PHY gets its optimal offset value. + * + * @param phy_ctrl pointer to the current phy controller + * @param ch channel number + * @param coarse_lock_val The coarse lock value read from PHY_CON13. + * (0 - 0x7f) + */ +static void software_find_read_offset(struct exynos5420_phy_control *phy_ctrl, + int ch, unsigned int coarse_lock_val) +{ + unsigned int offsetr_cent; + int byte_lane; + int left_limit; + int right_limit; + int left[NUM_BYTE_LANES]; + int right[NUM_BYTE_LANES]; + int i; + + /* Fill the memory with test patterns */ + for (i = 0; i < ARRAY_SIZE(test_pattern); i++) + writel(test_pattern[i], test_addr + i * 4 + ch * 0x80); + + /* Figure out the limits we'll test with; keep -127 < limit < 127 */ + left_limit = DEFAULT_DQS - coarse_lock_val; + right_limit = DEFAULT_DQS + coarse_lock_val; + if (right_limit > 127) + right_limit = 127; + + /* Fill in the location where reads were OK from left and right */ + test_shifts(phy_ctrl, ch, left_limit, right_limit, left); + test_shifts(phy_ctrl, ch, right_limit, left_limit, right); + + /* Make a final value by taking the center between the left and right */ + offsetr_cent = 0; + for (byte_lane = 0; byte_lane < NUM_BYTE_LANES; byte_lane++) { + int temp_center; + unsigned int vmwc; + + temp_center = (left[byte_lane] + right[byte_lane]) / 2; + vmwc = make_signed_byte(temp_center); + offsetr_cent |= vmwc << (8 * byte_lane); + } + dmc_set_read_offset_value(phy_ctrl, offsetr_cent); +} + int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) { struct exynos5420_clock *clk = @@ -229,6 +447,7 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) struct exynos5420_phy_control *phy0_ctrl, *phy1_ctrl; struct exynos5420_dmc *drex0, *drex1; struct exynos5420_tzasc *tzasc0, *tzasc1; + struct exynos5_power *pmu; uint32_t val, n_lock_r, n_lock_w_phy0, n_lock_w_phy1; uint32_t lock0_info, lock1_info; int chip; @@ -243,6 +462,8 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) tzasc0 = (struct exynos5420_tzasc *)samsung_get_base_dmc_tzasc(); tzasc1 = (struct exynos5420_tzasc *)(samsung_get_base_dmc_tzasc() + DMC_OFFSET); + pmu = (struct exynos5_power *)EXYNOS5420_POWER_BASE; + /* Enable PAUSE for DREX */ setbits_le32(&clk->pause, ENABLE_BIT); @@ -512,7 +733,7 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) writel(val, &phy1_ctrl->phy_con1); writel(CTRL_RDLVL_GATE_ENABLE, &drex0->rdlvl_config); - i = TIMEOUT; + i = TIMEOUT_US; while (((readl(&drex0->phystatus) & RDLVL_COMPLETE_CHO) != RDLVL_COMPLETE_CHO) && (i > 0)) { /* @@ -527,7 +748,7 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) writel(CTRL_RDLVL_GATE_DISABLE, &drex0->rdlvl_config); writel(CTRL_RDLVL_GATE_ENABLE, &drex1->rdlvl_config); - i = TIMEOUT; + i = TIMEOUT_US; while (((readl(&drex1->phystatus) & RDLVL_COMPLETE_CHO) != RDLVL_COMPLETE_CHO) && (i > 0)) { /* @@ -561,6 +782,27 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) setbits_le32(&phy1_ctrl->phy_con2, DLL_DESKEW_EN); } + /* + * Do software read leveling + * + * Do this before we turn on auto refresh since the auto refresh can + * be in conflict with the resync operation that's part of setting + * read leveling. + */ + if (!reset) { + /* restore calibrated value after resume */ + dmc_set_read_offset_value(phy0_ctrl, readl(&pmu->pmu_spare1)); + dmc_set_read_offset_value(phy1_ctrl, readl(&pmu->pmu_spare2)); + } else { + software_find_read_offset(phy0_ctrl, 0, + CTRL_LOCK_COARSE(lock0_info)); + software_find_read_offset(phy1_ctrl, 1, + CTRL_LOCK_COARSE(lock1_info)); + /* save calibrated value to restore after resume */ + writel(dmc_get_read_offset_value(phy0_ctrl), &pmu->pmu_spare1); + writel(dmc_get_read_offset_value(phy1_ctrl), &pmu->pmu_spare2); + } + /* Send PALL command */ dmc_config_prech(mem, &drex0->directcmd); dmc_config_prech(mem, &drex1->directcmd); diff --git a/arch/arm/cpu/armv7/exynos/exynos5_setup.h b/arch/arm/cpu/armv7/exynos/exynos5_setup.h index d415c91..d91e585 100644 --- a/arch/arm/cpu/armv7/exynos/exynos5_setup.h +++ b/arch/arm/cpu/armv7/exynos/exynos5_setup.h @@ -282,8 +282,11 @@ #define PHY_CON12_VAL 0x10107F50 #define CTRL_START (1 << 6) #define CTRL_DLL_ON (1 << 5) +#define CTRL_LOCK_COARSE_OFFSET 10 +#define CTRL_LOCK_COARSE_MASK (0x7F << CTRL_LOCK_COARSE_OFFSET) +#define CTRL_LOCK_COARSE(x) (((x) & CTRL_LOCK_COARSE_MASK) >> \ + CTRL_LOCK_COARSE_OFFSET) #define CTRL_FORCE_MASK (0x7F << 8) -#define CTRL_LOCK_COARSE_MASK (0x7F << 10) #define CTRL_FINE_LOCKED 0x7 #define CTRL_OFFSETD_RESET_VAL 0x8 -- cgit v1.1 From eacf46d340db182a4068772ec43e2586e9eaf80b Mon Sep 17 00:00:00 2001 From: Akshay Saraswat Date: Wed, 18 Jun 2014 17:53:57 +0530 Subject: Exynos5420: Let macros be used for exynos5420 Macros defined in exynos5_setup.h specific to SMDK5420 are required for Peach-Pit too. Hence, replacing CONFIG_SMDK5420 with CONFIG_EXYNOS5420 to enable these macros for all the boards based on Exynos5420. Signed-off-by: Akshay Saraswat Acked-by: Simon Glass Tested-by: Simon Glass Signed-off-by: Minkyu Kang --- arch/arm/cpu/armv7/exynos/exynos5_setup.h | 6 +++--- 1 file changed, 3 insertions(+), 3 deletions(-) (limited to 'arch/arm/cpu/armv7') diff --git a/arch/arm/cpu/armv7/exynos/exynos5_setup.h b/arch/arm/cpu/armv7/exynos/exynos5_setup.h index d91e585..3242093 100644 --- a/arch/arm/cpu/armv7/exynos/exynos5_setup.h +++ b/arch/arm/cpu/armv7/exynos/exynos5_setup.h @@ -435,10 +435,10 @@ /* * Definitions that differ with SoC's. - * Below is the part defining macros for smdk5250. - * Else part introduces macros for smdk5420. + * Below is the part defining macros for Exynos5250. + * Else part introduces macros for Exynos5420. */ -#ifndef CONFIG_SMDK5420 +#ifndef CONFIG_EXYNOS5420 /* APLL_CON1 */ #define APLL_CON1_VAL (0x00203800) -- cgit v1.1