From e9ff0d26c61f8999a3f48b78538eae0b072ce4c6 Mon Sep 17 00:00:00 2001 From: Lily Zhang Date: Sat, 19 Dec 2009 16:48:58 +0800 Subject: ENGR00119505 MX51 BBG: Change DDR2 settings 1. Change the drive strength of DRAM PAD as high 2. Change ESDCFG setting Signed-off-by: Lily Zhang --- board/freescale/mx51_bbg/flash_header.S | 12 ++++++------ 1 file changed, 6 insertions(+), 6 deletions(-) diff --git a/board/freescale/mx51_bbg/flash_header.S b/board/freescale/mx51_bbg/flash_header.S index 17a5c59..2f860b8 100644 --- a/board/freescale/mx51_bbg/flash_header.S +++ b/board/freescale/mx51_bbg/flash_header.S @@ -65,17 +65,17 @@ MXC_DCD_ITEM(16, 4, IOMUXC_BASE_ADDR + 0x4b4, 0xe3) MXC_DCD_ITEM(17, 4, IOMUXC_BASE_ADDR + 0x4cc, 0xe3) MXC_DCD_ITEM(18, 4, IOMUXC_BASE_ADDR + 0x4d0, 0xe2) /* Set drive strength to MAX */ -MXC_DCD_ITEM(19, 4, IOMUXC_BASE_ADDR + 0x82c, 0x6) -MXC_DCD_ITEM(20, 4, IOMUXC_BASE_ADDR + 0x8a4, 0x6) -MXC_DCD_ITEM(21, 4, IOMUXC_BASE_ADDR + 0x8ac, 0x6) -MXC_DCD_ITEM(22, 4, IOMUXC_BASE_ADDR + 0x8b8, 0x6) +MXC_DCD_ITEM(19, 4, IOMUXC_BASE_ADDR + 0x82c, 0x4) +MXC_DCD_ITEM(20, 4, IOMUXC_BASE_ADDR + 0x8a4, 0x4) +MXC_DCD_ITEM(21, 4, IOMUXC_BASE_ADDR + 0x8ac, 0x4) +MXC_DCD_ITEM(22, 4, IOMUXC_BASE_ADDR + 0x8b8, 0x4) /* 13 ROW, 10 COL, 32Bit, SREF=4 Micron Model */ /* CAS=3, BL=4 */ MXC_DCD_ITEM(23, 4, ESDCTL_BASE_ADDR + ESDCTL_ESDCTL0, 0x82a20000) MXC_DCD_ITEM(24, 4, ESDCTL_BASE_ADDR + ESDCTL_ESDCTL1, 0x82a20000) MXC_DCD_ITEM(25, 4, ESDCTL_BASE_ADDR + ESDCTL_ESDMISC, 0x000ad0d0) -MXC_DCD_ITEM(26, 4, ESDCTL_BASE_ADDR + ESDCTL_ESDCFG0, 0x333574aa) -MXC_DCD_ITEM(27, 4, ESDCTL_BASE_ADDR + ESDCTL_ESDCFG1, 0x333574aa) +MXC_DCD_ITEM(26, 4, ESDCTL_BASE_ADDR + ESDCTL_ESDCFG0, 0x333584ab) +MXC_DCD_ITEM(27, 4, ESDCTL_BASE_ADDR + ESDCTL_ESDCFG1, 0x333584ab) /* Init DRAM on CS0 */ MXC_DCD_ITEM(28, 4, ESDCTL_BASE_ADDR + ESDCTL_ESDSCR, 0x04008008) MXC_DCD_ITEM(29, 4, ESDCTL_BASE_ADDR + ESDCTL_ESDSCR, 0x0000801a) -- cgit v1.1