diff options
Diffstat (limited to 'drivers/nand/nand_ids.c')
| -rw-r--r-- | drivers/nand/nand_ids.c | 28 |
1 files changed, 14 insertions, 14 deletions
diff --git a/drivers/nand/nand_ids.c b/drivers/nand/nand_ids.c index 5df1e89..39882cc 100644 --- a/drivers/nand/nand_ids.c +++ b/drivers/nand/nand_ids.c @@ -18,14 +18,14 @@ /* * Chip ID list -* +* * Name. ID code, pagesize, chipsize in MegaByte, eraseblock size, * options -* +* * Pagesize; 0, 256, 512 * 0 get this information from the extended chip ID + 256 256 Byte page size -* 512 512 Byte page size +* 512 512 Byte page size */ struct nand_flash_dev nand_flash_ids[] = { {"NAND 1MiB 5V 8-bit", 0x6e, 256, 1, 0x1000, 0}, @@ -38,36 +38,36 @@ struct nand_flash_dev nand_flash_ids[] = { {"NAND 4MiB 3,3V 8-bit", 0xe3, 512, 4, 0x2000, 0}, {"NAND 4MiB 3,3V 8-bit", 0xe5, 512, 4, 0x2000, 0}, {"NAND 8MiB 3,3V 8-bit", 0xd6, 512, 8, 0x2000, 0}, - + {"NAND 8MiB 1,8V 8-bit", 0x39, 512, 8, 0x2000, 0}, {"NAND 8MiB 3,3V 8-bit", 0xe6, 512, 8, 0x2000, 0}, {"NAND 8MiB 1,8V 16-bit", 0x49, 512, 8, 0x2000, NAND_BUSWIDTH_16}, {"NAND 8MiB 3,3V 16-bit", 0x59, 512, 8, 0x2000, NAND_BUSWIDTH_16}, - + {"NAND 16MiB 1,8V 8-bit", 0x33, 512, 16, 0x4000, 0}, {"NAND 16MiB 3,3V 8-bit", 0x73, 512, 16, 0x4000, 0}, {"NAND 16MiB 1,8V 16-bit", 0x43, 512, 16, 0x4000, NAND_BUSWIDTH_16}, {"NAND 16MiB 3,3V 16-bit", 0x53, 512, 16, 0x4000, NAND_BUSWIDTH_16}, - + {"NAND 32MiB 1,8V 8-bit", 0x35, 512, 32, 0x4000, 0}, {"NAND 32MiB 3,3V 8-bit", 0x75, 512, 32, 0x4000, 0}, {"NAND 32MiB 1,8V 16-bit", 0x45, 512, 32, 0x4000, NAND_BUSWIDTH_16}, {"NAND 32MiB 3,3V 16-bit", 0x55, 512, 32, 0x4000, NAND_BUSWIDTH_16}, - + {"NAND 64MiB 1,8V 8-bit", 0x36, 512, 64, 0x4000, 0}, {"NAND 64MiB 3,3V 8-bit", 0x76, 512, 64, 0x4000, 0}, {"NAND 64MiB 1,8V 16-bit", 0x46, 512, 64, 0x4000, NAND_BUSWIDTH_16}, {"NAND 64MiB 3,3V 16-bit", 0x56, 512, 64, 0x4000, NAND_BUSWIDTH_16}, - + {"NAND 128MiB 1,8V 8-bit", 0x78, 512, 128, 0x4000, 0}, {"NAND 128MiB 3,3V 8-bit", 0x79, 512, 128, 0x4000, 0}, {"NAND 128MiB 1,8V 16-bit", 0x72, 512, 128, 0x4000, NAND_BUSWIDTH_16}, {"NAND 128MiB 3,3V 16-bit", 0x74, 512, 128, 0x4000, NAND_BUSWIDTH_16}, - + {"NAND 256MiB 3,3V 8-bit", 0x71, 512, 256, 0x4000, 0}, {"NAND 512MiB 3,3V 8-bit", 0xDC, 512, 512, 0x4000, 0}, - + /* These are the new chips with large page size. The pagesize * and the erasesize is determined from the extended id bytes */ @@ -82,13 +82,13 @@ struct nand_flash_dev nand_flash_ids[] = { {"NAND 256MiB 3,3V 8-bit", 0xDA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, {"NAND 256MiB 1,8V 16-bit", 0xBA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, {"NAND 256MiB 3,3V 16-bit", 0xCA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, - + /* 4 Gigabit */ {"NAND 512MiB 1,8V 8-bit", 0xAC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, {"NAND 512MiB 3,3V 8-bit", 0xDC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, {"NAND 512MiB 1,8V 16-bit", 0xBC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, {"NAND 512MiB 3,3V 16-bit", 0xCC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, - + /* 8 Gigabit */ {"NAND 1GiB 1,8V 8-bit", 0xA3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, {"NAND 1GiB 3,3V 8-bit", 0xD3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, @@ -101,11 +101,11 @@ struct nand_flash_dev nand_flash_ids[] = { {"NAND 2GiB 1,8V 16-bit", 0xB5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, {"NAND 2GiB 3,3V 16-bit", 0xC5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, - /* Renesas AND 1 Gigabit. Those chips do not support extended id and have a strange page/block layout ! + /* Renesas AND 1 Gigabit. Those chips do not support extended id and have a strange page/block layout ! * The chosen minimum erasesize is 4 * 2 * 2048 = 16384 Byte, as those chips have an array of 4 page planes * 1 block = 2 pages, but due to plane arrangement the blocks 0-3 consists of page 0 + 4,1 + 5, 2 + 6, 3 + 7 * Anyway JFFS2 would increase the eraseblock size so we chose a combined one which can be erased in one go - * There are more speed improvements for reads and writes possible, but not implemented now + * There are more speed improvements for reads and writes possible, but not implemented now */ {"AND 128MiB 3,3V 8-bit", 0x01, 2048, 128, 0x4000, NAND_IS_AND | NAND_NO_AUTOINCR | NAND_4PAGE_ARRAY}, |