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path: root/drivers/nand/nand_ids.c
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Diffstat (limited to 'drivers/nand/nand_ids.c')
-rw-r--r--drivers/nand/nand_ids.c28
1 files changed, 14 insertions, 14 deletions
diff --git a/drivers/nand/nand_ids.c b/drivers/nand/nand_ids.c
index 5df1e89..39882cc 100644
--- a/drivers/nand/nand_ids.c
+++ b/drivers/nand/nand_ids.c
@@ -18,14 +18,14 @@
/*
* Chip ID list
-*
+*
* Name. ID code, pagesize, chipsize in MegaByte, eraseblock size,
* options
-*
+*
* Pagesize; 0, 256, 512
* 0 get this information from the extended chip ID
+ 256 256 Byte page size
-* 512 512 Byte page size
+* 512 512 Byte page size
*/
struct nand_flash_dev nand_flash_ids[] = {
{"NAND 1MiB 5V 8-bit", 0x6e, 256, 1, 0x1000, 0},
@@ -38,36 +38,36 @@ struct nand_flash_dev nand_flash_ids[] = {
{"NAND 4MiB 3,3V 8-bit", 0xe3, 512, 4, 0x2000, 0},
{"NAND 4MiB 3,3V 8-bit", 0xe5, 512, 4, 0x2000, 0},
{"NAND 8MiB 3,3V 8-bit", 0xd6, 512, 8, 0x2000, 0},
-
+
{"NAND 8MiB 1,8V 8-bit", 0x39, 512, 8, 0x2000, 0},
{"NAND 8MiB 3,3V 8-bit", 0xe6, 512, 8, 0x2000, 0},
{"NAND 8MiB 1,8V 16-bit", 0x49, 512, 8, 0x2000, NAND_BUSWIDTH_16},
{"NAND 8MiB 3,3V 16-bit", 0x59, 512, 8, 0x2000, NAND_BUSWIDTH_16},
-
+
{"NAND 16MiB 1,8V 8-bit", 0x33, 512, 16, 0x4000, 0},
{"NAND 16MiB 3,3V 8-bit", 0x73, 512, 16, 0x4000, 0},
{"NAND 16MiB 1,8V 16-bit", 0x43, 512, 16, 0x4000, NAND_BUSWIDTH_16},
{"NAND 16MiB 3,3V 16-bit", 0x53, 512, 16, 0x4000, NAND_BUSWIDTH_16},
-
+
{"NAND 32MiB 1,8V 8-bit", 0x35, 512, 32, 0x4000, 0},
{"NAND 32MiB 3,3V 8-bit", 0x75, 512, 32, 0x4000, 0},
{"NAND 32MiB 1,8V 16-bit", 0x45, 512, 32, 0x4000, NAND_BUSWIDTH_16},
{"NAND 32MiB 3,3V 16-bit", 0x55, 512, 32, 0x4000, NAND_BUSWIDTH_16},
-
+
{"NAND 64MiB 1,8V 8-bit", 0x36, 512, 64, 0x4000, 0},
{"NAND 64MiB 3,3V 8-bit", 0x76, 512, 64, 0x4000, 0},
{"NAND 64MiB 1,8V 16-bit", 0x46, 512, 64, 0x4000, NAND_BUSWIDTH_16},
{"NAND 64MiB 3,3V 16-bit", 0x56, 512, 64, 0x4000, NAND_BUSWIDTH_16},
-
+
{"NAND 128MiB 1,8V 8-bit", 0x78, 512, 128, 0x4000, 0},
{"NAND 128MiB 3,3V 8-bit", 0x79, 512, 128, 0x4000, 0},
{"NAND 128MiB 1,8V 16-bit", 0x72, 512, 128, 0x4000, NAND_BUSWIDTH_16},
{"NAND 128MiB 3,3V 16-bit", 0x74, 512, 128, 0x4000, NAND_BUSWIDTH_16},
-
+
{"NAND 256MiB 3,3V 8-bit", 0x71, 512, 256, 0x4000, 0},
{"NAND 512MiB 3,3V 8-bit", 0xDC, 512, 512, 0x4000, 0},
-
+
/* These are the new chips with large page size. The pagesize
* and the erasesize is determined from the extended id bytes
*/
@@ -82,13 +82,13 @@ struct nand_flash_dev nand_flash_ids[] = {
{"NAND 256MiB 3,3V 8-bit", 0xDA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 256MiB 1,8V 16-bit", 0xBA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 256MiB 3,3V 16-bit", 0xCA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
-
+
/* 4 Gigabit */
{"NAND 512MiB 1,8V 8-bit", 0xAC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 512MiB 3,3V 8-bit", 0xDC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 512MiB 1,8V 16-bit", 0xBC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 512MiB 3,3V 16-bit", 0xCC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
-
+
/* 8 Gigabit */
{"NAND 1GiB 1,8V 8-bit", 0xA3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 1GiB 3,3V 8-bit", 0xD3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
@@ -101,11 +101,11 @@ struct nand_flash_dev nand_flash_ids[] = {
{"NAND 2GiB 1,8V 16-bit", 0xB5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 2GiB 3,3V 16-bit", 0xC5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
- /* Renesas AND 1 Gigabit. Those chips do not support extended id and have a strange page/block layout !
+ /* Renesas AND 1 Gigabit. Those chips do not support extended id and have a strange page/block layout !
* The chosen minimum erasesize is 4 * 2 * 2048 = 16384 Byte, as those chips have an array of 4 page planes
* 1 block = 2 pages, but due to plane arrangement the blocks 0-3 consists of page 0 + 4,1 + 5, 2 + 6, 3 + 7
* Anyway JFFS2 would increase the eraseblock size so we chose a combined one which can be erased in one go
- * There are more speed improvements for reads and writes possible, but not implemented now
+ * There are more speed improvements for reads and writes possible, but not implemented now
*/
{"AND 128MiB 3,3V 8-bit", 0x01, 2048, 128, 0x4000, NAND_IS_AND | NAND_NO_AUTOINCR | NAND_4PAGE_ARRAY},