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-rw-r--r--arch/arm/cpu/armv7/exynos/dmc_common.c2
-rw-r--r--arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c369
-rw-r--r--arch/arm/cpu/armv7/exynos/exynos5_setup.h21
-rw-r--r--arch/arm/cpu/armv7/exynos/lowlevel_init.c2
-rw-r--r--arch/arm/dts/Makefile3
-rw-r--r--arch/arm/dts/exynos5420-peach-pit.dts127
-rw-r--r--arch/arm/dts/exynos5420-smdk5420.dts23
-rw-r--r--arch/arm/dts/exynos5420.dtsi70
-rw-r--r--arch/arm/dts/exynos54xx.dtsi151
-rw-r--r--arch/arm/include/asm/arch-exynos/dmc.h3
-rw-r--r--arch/arm/include/asm/arch-exynos/power.h4
11 files changed, 582 insertions, 193 deletions
diff --git a/arch/arm/cpu/armv7/exynos/dmc_common.c b/arch/arm/cpu/armv7/exynos/dmc_common.c
index cca925e..9b6ee69 100644
--- a/arch/arm/cpu/armv7/exynos/dmc_common.c
+++ b/arch/arm/cpu/armv7/exynos/dmc_common.c
@@ -162,7 +162,7 @@ void mem_ctrl_init(int reset)
/* If there are any other memory variant, add their init call below */
if (param->mem_type == DDR_MODE_DDR3) {
- ret = ddr3_mem_ctrl_init(mem, param->mem_iv_size, reset);
+ ret = ddr3_mem_ctrl_init(mem, reset);
if (ret) {
/* will hang if failed to init memory control */
while (1)
diff --git a/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c b/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c
index 487e6f4..b86dd2d 100644
--- a/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c
+++ b/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c
@@ -6,6 +6,7 @@
* SPDX-License-Identifier: GPL-2.0+
*/
+#include <common.h>
#include <config.h>
#include <asm/io.h>
#include <asm/arch/clock.h>
@@ -16,7 +17,11 @@
#include "exynos5_setup.h"
#include "clock_init.h"
-#define TIMEOUT 10000
+#define TIMEOUT_US 10000
+#define NUM_BYTE_LANES 4
+#define DEFAULT_DQS 8
+#define DEFAULT_DQS_X4 (DEFAULT_DQS << 24) || (DEFAULT_DQS << 16) \
+ || (DEFAULT_DQS << 8) || (DEFAULT_DQS << 0)
#ifdef CONFIG_EXYNOS5250
static void reset_phy_ctrl(void)
@@ -28,8 +33,7 @@ static void reset_phy_ctrl(void)
writel(DDR3PHY_CTRL_PHY_RESET, &clk->lpddr3phy_ctrl);
}
-int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size,
- int reset)
+int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset)
{
unsigned int val;
struct exynos5_phy_control *phy0_ctrl, *phy1_ctrl;
@@ -177,7 +181,7 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size,
writel(val, &phy1_ctrl->phy_con1);
writel(CTRL_RDLVL_GATE_ENABLE, &dmc->rdlvl_config);
- i = TIMEOUT;
+ i = TIMEOUT_US;
while ((readl(&dmc->phystatus) &
(RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1)) !=
(RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1) && i > 0) {
@@ -221,8 +225,220 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size,
#endif
#ifdef CONFIG_EXYNOS5420
-int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size,
- int reset)
+/**
+ * RAM address to use in the test.
+ *
+ * We'll use 4 words at this address and 4 at this address + 0x80 (Ares
+ * interleaves channels every 128 bytes). This will allow us to evaluate all of
+ * the chips in a 1 chip per channel (2GB) system and half the chips in a 2
+ * chip per channel (4GB) system. We can't test the 2nd chip since we need to
+ * do tests before the 2nd chip is enabled. Looking at the 2nd chip isn't
+ * critical because the 1st and 2nd chip have very similar timings (they'd
+ * better have similar timings, since there's only a single adjustment that is
+ * shared by both chips).
+ */
+const unsigned int test_addr = CONFIG_SYS_SDRAM_BASE;
+
+/* Test pattern with which RAM will be tested */
+static const unsigned int test_pattern[] = {
+ 0x5a5a5a5a,
+ 0xa5a5a5a5,
+ 0xf0f0f0f0,
+ 0x0f0f0f0f,
+};
+
+/**
+ * This function is a test vector for sw read leveling,
+ * it compares the read data with the written data.
+ *
+ * @param ch DMC channel number
+ * @param byte_lane which DQS byte offset,
+ * possible values are 0,1,2,3
+ * @return TRUE if memory was good, FALSE if not.
+ */
+static bool dmc_valid_window_test_vector(int ch, int byte_lane)
+{
+ unsigned int read_data;
+ unsigned int mask;
+ int i;
+
+ mask = 0xFF << (8 * byte_lane);
+
+ for (i = 0; i < ARRAY_SIZE(test_pattern); i++) {
+ read_data = readl(test_addr + i * 4 + ch * 0x80);
+ if ((read_data & mask) != (test_pattern[i] & mask))
+ return false;
+ }
+
+ return true;
+}
+
+/**
+ * This function returns current read offset value.
+ *
+ * @param phy_ctrl pointer to the current phy controller
+ */
+static unsigned int dmc_get_read_offset_value(struct exynos5420_phy_control
+ *phy_ctrl)
+{
+ return readl(&phy_ctrl->phy_con4);
+}
+
+/**
+ * This function performs resync, so that slave DLL is updated.
+ *
+ * @param phy_ctrl pointer to the current phy controller
+ */
+static void ddr_phy_set_do_resync(struct exynos5420_phy_control *phy_ctrl)
+{
+ setbits_le32(&phy_ctrl->phy_con10, PHY_CON10_CTRL_OFFSETR3);
+ clrbits_le32(&phy_ctrl->phy_con10, PHY_CON10_CTRL_OFFSETR3);
+}
+
+/**
+ * This function sets read offset value register with 'offset'.
+ *
+ * ...we also call call ddr_phy_set_do_resync().
+ *
+ * @param phy_ctrl pointer to the current phy controller
+ * @param offset offset to read DQS
+ */
+static void dmc_set_read_offset_value(struct exynos5420_phy_control *phy_ctrl,
+ unsigned int offset)
+{
+ writel(offset, &phy_ctrl->phy_con4);
+ ddr_phy_set_do_resync(phy_ctrl);
+}
+
+/**
+ * Convert a 2s complement byte to a byte with a sign bit.
+ *
+ * NOTE: you shouldn't use normal math on the number returned by this function.
+ * As an example, -10 = 0xf6. After this function -10 = 0x8a. If you wanted
+ * to do math and get the average of 10 and -10 (should be 0):
+ * 0x8a + 0xa = 0x94 (-108)
+ * 0x94 / 2 = 0xca (-54)
+ * ...and 0xca = sign bit plus 0x4a, or -74
+ *
+ * Also note that you lose the ability to represent -128 since there are two
+ * representations of 0.
+ *
+ * @param b The byte to convert in two's complement.
+ * @return The 7-bit value + sign bit.
+ */
+
+unsigned char make_signed_byte(signed char b)
+{
+ if (b < 0)
+ return 0x80 | -b;
+ else
+ return b;
+}
+
+/**
+ * Test various shifts starting at 'start' and going to 'end'.
+ *
+ * For each byte lane, we'll walk through shift starting at 'start' and going
+ * to 'end' (inclusive). When we are finally able to read the test pattern
+ * we'll store the value in the results array.
+ *
+ * @param phy_ctrl pointer to the current phy controller
+ * @param ch channel number
+ * @param start the start shift. -127 to 127
+ * @param end the end shift. -127 to 127
+ * @param results we'll store results for each byte lane.
+ */
+
+void test_shifts(struct exynos5420_phy_control *phy_ctrl, int ch,
+ int start, int end, int results[NUM_BYTE_LANES])
+{
+ int incr = (start < end) ? 1 : -1;
+ int byte_lane;
+
+ for (byte_lane = 0; byte_lane < NUM_BYTE_LANES; byte_lane++) {
+ int shift;
+
+ dmc_set_read_offset_value(phy_ctrl, DEFAULT_DQS_X4);
+ results[byte_lane] = DEFAULT_DQS;
+
+ for (shift = start; shift != (end + incr); shift += incr) {
+ unsigned int byte_offsetr;
+ unsigned int offsetr;
+
+ byte_offsetr = make_signed_byte(shift);
+
+ offsetr = dmc_get_read_offset_value(phy_ctrl);
+ offsetr &= ~(0xFF << (8 * byte_lane));
+ offsetr |= (byte_offsetr << (8 * byte_lane));
+ dmc_set_read_offset_value(phy_ctrl, offsetr);
+
+ if (dmc_valid_window_test_vector(ch, byte_lane)) {
+ results[byte_lane] = shift;
+ break;
+ }
+ }
+ }
+}
+
+/**
+ * This function performs SW read leveling to compensate DQ-DQS skew at
+ * receiver it first finds the optimal read offset value on each DQS
+ * then applies the value to PHY.
+ *
+ * Read offset value has its min margin and max margin. If read offset
+ * value exceeds its min or max margin, read data will have corruption.
+ * To avoid this we are doing sw read leveling.
+ *
+ * SW read leveling is:
+ * 1> Finding offset value's left_limit and right_limit
+ * 2> and calculate its center value
+ * 3> finally programs that center value to PHY
+ * 4> then PHY gets its optimal offset value.
+ *
+ * @param phy_ctrl pointer to the current phy controller
+ * @param ch channel number
+ * @param coarse_lock_val The coarse lock value read from PHY_CON13.
+ * (0 - 0x7f)
+ */
+static void software_find_read_offset(struct exynos5420_phy_control *phy_ctrl,
+ int ch, unsigned int coarse_lock_val)
+{
+ unsigned int offsetr_cent;
+ int byte_lane;
+ int left_limit;
+ int right_limit;
+ int left[NUM_BYTE_LANES];
+ int right[NUM_BYTE_LANES];
+ int i;
+
+ /* Fill the memory with test patterns */
+ for (i = 0; i < ARRAY_SIZE(test_pattern); i++)
+ writel(test_pattern[i], test_addr + i * 4 + ch * 0x80);
+
+ /* Figure out the limits we'll test with; keep -127 < limit < 127 */
+ left_limit = DEFAULT_DQS - coarse_lock_val;
+ right_limit = DEFAULT_DQS + coarse_lock_val;
+ if (right_limit > 127)
+ right_limit = 127;
+
+ /* Fill in the location where reads were OK from left and right */
+ test_shifts(phy_ctrl, ch, left_limit, right_limit, left);
+ test_shifts(phy_ctrl, ch, right_limit, left_limit, right);
+
+ /* Make a final value by taking the center between the left and right */
+ offsetr_cent = 0;
+ for (byte_lane = 0; byte_lane < NUM_BYTE_LANES; byte_lane++) {
+ int temp_center;
+ unsigned int vmwc;
+
+ temp_center = (left[byte_lane] + right[byte_lane]) / 2;
+ vmwc = make_signed_byte(temp_center);
+ offsetr_cent |= vmwc << (8 * byte_lane);
+ }
+ dmc_set_read_offset_value(phy_ctrl, offsetr_cent);
+}
+
+int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset)
{
struct exynos5420_clock *clk =
(struct exynos5420_clock *)samsung_get_base_clock();
@@ -231,7 +447,9 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size,
struct exynos5420_phy_control *phy0_ctrl, *phy1_ctrl;
struct exynos5420_dmc *drex0, *drex1;
struct exynos5420_tzasc *tzasc0, *tzasc1;
+ struct exynos5_power *pmu;
uint32_t val, n_lock_r, n_lock_w_phy0, n_lock_w_phy1;
+ uint32_t lock0_info, lock1_info;
int chip;
int i;
@@ -244,6 +462,7 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size,
tzasc0 = (struct exynos5420_tzasc *)samsung_get_base_dmc_tzasc();
tzasc1 = (struct exynos5420_tzasc *)(samsung_get_base_dmc_tzasc()
+ DMC_OFFSET);
+ pmu = (struct exynos5_power *)EXYNOS5420_POWER_BASE;
/* Enable PAUSE for DREX */
setbits_le32(&clk->pause, ENABLE_BIT);
@@ -394,7 +613,41 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size,
*/
dmc_config_mrs(mem, &drex0->directcmd);
dmc_config_mrs(mem, &drex1->directcmd);
- } else {
+ }
+
+ /*
+ * Get PHY_CON13 from both phys. Gate CLKM around reading since
+ * PHY_CON13 is glitchy when CLKM is running. We're paranoid and
+ * wait until we get a "fine lock", though a coarse lock is probably
+ * OK (we only use the coarse numbers below). We try to gate the
+ * clock for as short a time as possible in case SDRAM is somehow
+ * sensitive. sdelay(10) in the loop is arbitrary to make sure
+ * there is some time for PHY_CON13 to get updated. In practice
+ * no delay appears to be needed.
+ */
+ val = readl(&clk->gate_bus_cdrex);
+ while (true) {
+ writel(val & ~0x1, &clk->gate_bus_cdrex);
+ lock0_info = readl(&phy0_ctrl->phy_con13);
+ writel(val, &clk->gate_bus_cdrex);
+
+ if ((lock0_info & CTRL_FINE_LOCKED) == CTRL_FINE_LOCKED)
+ break;
+
+ sdelay(10);
+ }
+ while (true) {
+ writel(val & ~0x2, &clk->gate_bus_cdrex);
+ lock1_info = readl(&phy1_ctrl->phy_con13);
+ writel(val, &clk->gate_bus_cdrex);
+
+ if ((lock1_info & CTRL_FINE_LOCKED) == CTRL_FINE_LOCKED)
+ break;
+
+ sdelay(10);
+ }
+
+ if (!reset) {
/*
* During Suspend-Resume & S/W-Reset, as soon as PMU releases
* pad retention, CKE goes high. This causes memory contents
@@ -445,15 +698,13 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size,
val |= (RDLVL_PASS_ADJ_VAL << RDLVL_PASS_ADJ_OFFSET);
writel(val, &phy1_ctrl->phy_con1);
- n_lock_r = readl(&phy0_ctrl->phy_con13);
- n_lock_w_phy0 = (n_lock_r & CTRL_LOCK_COARSE_MASK) >> 2;
+ n_lock_w_phy0 = (lock0_info & CTRL_LOCK_COARSE_MASK) >> 2;
n_lock_r = readl(&phy0_ctrl->phy_con12);
n_lock_r &= ~CTRL_DLL_ON;
n_lock_r |= n_lock_w_phy0;
writel(n_lock_r, &phy0_ctrl->phy_con12);
- n_lock_r = readl(&phy1_ctrl->phy_con13);
- n_lock_w_phy1 = (n_lock_r & CTRL_LOCK_COARSE_MASK) >> 2;
+ n_lock_w_phy1 = (lock1_info & CTRL_LOCK_COARSE_MASK) >> 2;
n_lock_r = readl(&phy1_ctrl->phy_con12);
n_lock_r &= ~CTRL_DLL_ON;
n_lock_r |= n_lock_w_phy1;
@@ -482,7 +733,7 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size,
writel(val, &phy1_ctrl->phy_con1);
writel(CTRL_RDLVL_GATE_ENABLE, &drex0->rdlvl_config);
- i = TIMEOUT;
+ i = TIMEOUT_US;
while (((readl(&drex0->phystatus) & RDLVL_COMPLETE_CHO) !=
RDLVL_COMPLETE_CHO) && (i > 0)) {
/*
@@ -497,7 +748,7 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size,
writel(CTRL_RDLVL_GATE_DISABLE, &drex0->rdlvl_config);
writel(CTRL_RDLVL_GATE_ENABLE, &drex1->rdlvl_config);
- i = TIMEOUT;
+ i = TIMEOUT_US;
while (((readl(&drex1->phystatus) & RDLVL_COMPLETE_CHO) !=
RDLVL_COMPLETE_CHO) && (i > 0)) {
/*
@@ -522,77 +773,6 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size,
&drex1->directcmd);
}
- if (mem->read_leveling_enable) {
- /* Set Read DQ Calibration */
- val = (0x3 << DIRECT_CMD_BANK_SHIFT) | 0x4;
- for (chip = 0; chip < mem->chips_to_configure; chip++) {
- writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
- &drex0->directcmd);
- writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
- &drex1->directcmd);
- }
-
- val = readl(&phy0_ctrl->phy_con1);
- val |= READ_LEVELLING_DDR3;
- writel(val, &phy0_ctrl->phy_con1);
- val = readl(&phy1_ctrl->phy_con1);
- val |= READ_LEVELLING_DDR3;
- writel(val, &phy1_ctrl->phy_con1);
-
- val = readl(&phy0_ctrl->phy_con2);
- val |= (RDLVL_EN | RDLVL_INCR_ADJ);
- writel(val, &phy0_ctrl->phy_con2);
- val = readl(&phy1_ctrl->phy_con2);
- val |= (RDLVL_EN | RDLVL_INCR_ADJ);
- writel(val, &phy1_ctrl->phy_con2);
-
- setbits_le32(&drex0->rdlvl_config,
- CTRL_RDLVL_DATA_ENABLE);
- i = TIMEOUT;
- while (((readl(&drex0->phystatus) & RDLVL_COMPLETE_CHO)
- != RDLVL_COMPLETE_CHO) && (i > 0)) {
- /*
- * TODO(waihong): Comment on how long this take
- * to timeout
- */
- sdelay(100);
- i--;
- }
- if (!i)
- return SETUP_ERR_RDLV_COMPLETE_TIMEOUT;
-
- clrbits_le32(&drex0->rdlvl_config,
- CTRL_RDLVL_DATA_ENABLE);
- setbits_le32(&drex1->rdlvl_config,
- CTRL_RDLVL_DATA_ENABLE);
- i = TIMEOUT;
- while (((readl(&drex1->phystatus) & RDLVL_COMPLETE_CHO)
- != RDLVL_COMPLETE_CHO) && (i > 0)) {
- /*
- * TODO(waihong): Comment on how long this take
- * to timeout
- */
- sdelay(100);
- i--;
- }
- if (!i)
- return SETUP_ERR_RDLV_COMPLETE_TIMEOUT;
-
- clrbits_le32(&drex1->rdlvl_config,
- CTRL_RDLVL_DATA_ENABLE);
-
- val = (0x3 << DIRECT_CMD_BANK_SHIFT);
- for (chip = 0; chip < mem->chips_to_configure; chip++) {
- writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
- &drex0->directcmd);
- writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
- &drex1->directcmd);
- }
-
- update_reset_dll(&drex0->phycontrol0, DDR_MODE_DDR3);
- update_reset_dll(&drex1->phycontrol0, DDR_MODE_DDR3);
- }
-
/* Common Settings for Leveling */
val = PHY_CON12_RESET_VAL;
writel((val + n_lock_w_phy0), &phy0_ctrl->phy_con12);
@@ -602,6 +782,27 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size,
setbits_le32(&phy1_ctrl->phy_con2, DLL_DESKEW_EN);
}
+ /*
+ * Do software read leveling
+ *
+ * Do this before we turn on auto refresh since the auto refresh can
+ * be in conflict with the resync operation that's part of setting
+ * read leveling.
+ */
+ if (!reset) {
+ /* restore calibrated value after resume */
+ dmc_set_read_offset_value(phy0_ctrl, readl(&pmu->pmu_spare1));
+ dmc_set_read_offset_value(phy1_ctrl, readl(&pmu->pmu_spare2));
+ } else {
+ software_find_read_offset(phy0_ctrl, 0,
+ CTRL_LOCK_COARSE(lock0_info));
+ software_find_read_offset(phy1_ctrl, 1,
+ CTRL_LOCK_COARSE(lock1_info));
+ /* save calibrated value to restore after resume */
+ writel(dmc_get_read_offset_value(phy0_ctrl), &pmu->pmu_spare1);
+ writel(dmc_get_read_offset_value(phy1_ctrl), &pmu->pmu_spare2);
+ }
+
/* Send PALL command */
dmc_config_prech(mem, &drex0->directcmd);
dmc_config_prech(mem, &drex1->directcmd);
diff --git a/arch/arm/cpu/armv7/exynos/exynos5_setup.h b/arch/arm/cpu/armv7/exynos/exynos5_setup.h
index 53b0ace..3242093 100644
--- a/arch/arm/cpu/armv7/exynos/exynos5_setup.h
+++ b/arch/arm/cpu/armv7/exynos/exynos5_setup.h
@@ -282,8 +282,12 @@
#define PHY_CON12_VAL 0x10107F50
#define CTRL_START (1 << 6)
#define CTRL_DLL_ON (1 << 5)
+#define CTRL_LOCK_COARSE_OFFSET 10
+#define CTRL_LOCK_COARSE_MASK (0x7F << CTRL_LOCK_COARSE_OFFSET)
+#define CTRL_LOCK_COARSE(x) (((x) & CTRL_LOCK_COARSE_MASK) >> \
+ CTRL_LOCK_COARSE_OFFSET)
#define CTRL_FORCE_MASK (0x7F << 8)
-#define CTRL_LOCK_COARSE_MASK (0x7F << 10)
+#define CTRL_FINE_LOCKED 0x7
#define CTRL_OFFSETD_RESET_VAL 0x8
#define CTRL_OFFSETD_VAL 0x7F
@@ -431,10 +435,10 @@
/*
* Definitions that differ with SoC's.
- * Below is the part defining macros for smdk5250.
- * Else part introduces macros for smdk5420.
+ * Below is the part defining macros for Exynos5250.
+ * Else part introduces macros for Exynos5420.
*/
-#ifndef CONFIG_SMDK5420
+#ifndef CONFIG_EXYNOS5420
/* APLL_CON1 */
#define APLL_CON1_VAL (0x00203800)
@@ -890,16 +894,11 @@ enum {
/*
* Memory variant specific initialization code for DDR3
*
- * @param mem Memory timings for this memory type.
- * @param mem_iv_size Memory interleaving size is a configurable parameter
- * which the DMC uses to decide how to split a memory
- * chunk into smaller chunks to support concurrent
- * accesses; may vary across boards.
+ * @param mem Memory timings for this memory type.
* @param reset Reset DDR PHY during initialization.
* @return 0 if ok, SETUP_ERR_... if there is a problem
*/
-int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size,
- int reset);
+int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset);
/* Memory variant specific initialization code for LPDDR3 */
void lpddr3_mem_ctrl_init(void);
diff --git a/arch/arm/cpu/armv7/exynos/lowlevel_init.c b/arch/arm/cpu/armv7/exynos/lowlevel_init.c
index dcc270f..83e1dcf 100644
--- a/arch/arm/cpu/armv7/exynos/lowlevel_init.c
+++ b/arch/arm/cpu/armv7/exynos/lowlevel_init.c
@@ -49,8 +49,6 @@ int do_lowlevel_init(void)
arch_cpu_init();
- set_ps_hold_ctrl();
-
reset_status = get_reset_status();
switch (reset_status) {
diff --git a/arch/arm/dts/Makefile b/arch/arm/dts/Makefile
index 61527a2..6e2e313 100644
--- a/arch/arm/dts/Makefile
+++ b/arch/arm/dts/Makefile
@@ -6,7 +6,8 @@ dtb-$(CONFIG_EXYNOS4) += exynos4210-origen.dtb \
dtb-$(CONFIG_EXYNOS5) += exynos5250-arndale.dtb \
exynos5250-snow.dtb \
exynos5250-smdk5250.dtb \
- exynos5420-smdk5420.dtb
+ exynos5420-smdk5420.dtb \
+ exynos5420-peach-pit.dtb
dtb-$(CONFIG_MX6) += imx6q-sabreauto.dtb
dtb-$(CONFIG_TEGRA) += tegra20-harmony.dtb \
tegra20-medcom-wide.dtb \
diff --git a/arch/arm/dts/exynos5420-peach-pit.dts b/arch/arm/dts/exynos5420-peach-pit.dts
new file mode 100644
index 0000000..8d148af
--- /dev/null
+++ b/arch/arm/dts/exynos5420-peach-pit.dts
@@ -0,0 +1,127 @@
+/*
+ * SAMSUNG/GOOGLE Peach-Pit board device tree source
+ *
+ * Copyright (c) 2013 Samsung Electronics Co., Ltd.
+ * http://www.samsung.com
+ *
+ * SPDX-License-Identifier: GPL-2.0+
+ */
+
+/dts-v1/;
+/include/ "exynos54xx.dtsi"
+
+/ {
+ model = "Samsung/Google Peach Pit board based on Exynos5420";
+
+ compatible = "google,pit-rev#", "google,pit",
+ "google,peach", "samsung,exynos5420", "samsung,exynos5";
+
+ config {
+ google,bad-wake-gpios = <&gpio 0x56 0>; /* gpx0-6 */
+ hwid = "PIT TEST A-A 7848";
+ lazy-init = <1>;
+ };
+
+ aliases {
+ serial0 = "/serial@12C30000";
+ console = "/serial@12C30000";
+ pmic = "/i2c@12ca0000";
+ };
+
+ dmc {
+ mem-manuf = "samsung";
+ mem-type = "ddr3";
+ clock-frequency = <800000000>;
+ arm-frequency = <1700000000>;
+ };
+
+ tmu@10060000 {
+ samsung,min-temp = <25>;
+ samsung,max-temp = <125>;
+ samsung,start-warning = <95>;
+ samsung,start-tripping = <105>;
+ samsung,hw-tripping = <110>;
+ samsung,efuse-min-value = <40>;
+ samsung,efuse-value = <55>;
+ samsung,efuse-max-value = <100>;
+ samsung,slope = <274761730>;
+ samsung,dc-value = <25>;
+ };
+
+ /* MAX77802 is on i2c bus 4 */
+ i2c@12ca0000 {
+ clock-frequency = <400000>;
+ power-regulator@9 {
+ compatible = "maxim,max77802-pmic";
+ reg = <0x9>;
+ };
+ };
+
+ i2c@12cd0000 { /* i2c7 */
+ clock-frequency = <100000>;
+ soundcodec@20 {
+ reg = <0x20>;
+ compatible = "maxim,max98090-codec";
+ };
+ };
+
+ sound@3830000 {
+ samsung,codec-type = "max98090";
+ };
+
+ i2c@12e10000 { /* i2c9 */
+ clock-frequency = <400000>;
+ tpm@20 {
+ compatible = "infineon,slb9645-tpm";
+ reg = <0x20>;
+ };
+ };
+
+ spi@12d30000 { /* spi1 */
+ spi-max-frequency = <50000000>;
+ firmware_storage_spi: flash@0 {
+ reg = <0>;
+
+ /*
+ * A region for the kernel to store a panic event
+ * which the firmware will add to the log.
+ */
+ elog-panic-event-offset = <0x01e00000 0x100000>;
+
+ elog-shrink-size = <0x400>;
+ elog-full-threshold = <0xc00>;
+ };
+ };
+
+ spi@12d40000 { /* spi2 */
+ spi-max-frequency = <4000000>;
+ spi-deactivate-delay = <200>;
+ cros-ec@0 {
+ reg = <0>;
+ compatible = "google,cros-ec";
+ spi-half-duplex;
+ spi-max-timeout-ms = <1100>;
+ spi-frame-header = <0xec>;
+ ec-interrupt = <&gpio 93 1>; /* GPX1_5 */
+
+ /*
+ * This describes the flash memory within the EC. Note
+ * that the STM32L flash erases to 0, not 0xff.
+ */
+ #address-cells = <1>;
+ #size-cells = <1>;
+ flash@8000000 {
+ reg = <0x08000000 0x20000>;
+ erase-value = <0>;
+ };
+ };
+ };
+
+ xhci@12000000 {
+ samsung,vbus-gpio = <&gpio 0x40 0>; /* H00 */
+ };
+
+ xhci@12400000 {
+ samsung,vbus-gpio = <&gpio 0x41 0>; /* H01 */
+ };
+};
diff --git a/arch/arm/dts/exynos5420-smdk5420.dts b/arch/arm/dts/exynos5420-smdk5420.dts
index d739763..1bc6256 100644
--- a/arch/arm/dts/exynos5420-smdk5420.dts
+++ b/arch/arm/dts/exynos5420-smdk5420.dts
@@ -8,7 +8,7 @@
*/
/dts-v1/;
-/include/ "exynos5420.dtsi"
+/include/ "exynos54xx.dtsi"
/ {
model = "SAMSUNG SMDK5420 board based on EXYNOS5420";
@@ -19,27 +19,6 @@
};
aliases {
- i2c0 = "/i2c@12c60000";
- i2c1 = "/i2c@12c70000";
- i2c2 = "/i2c@12c80000";
- i2c3 = "/i2c@12c90000";
- i2c4 = "/i2c@12ca0000";
- i2c5 = "/i2c@12cb0000";
- i2c6 = "/i2c@12cc0000";
- i2c7 = "/i2c@12cd0000";
- i2c8 = "/i2c@12e00000";
- i2c9 = "/i2c@12e10000";
- i2c10 = "/i2c@12e20000";
- spi0 = "/spi@12d20000";
- spi1 = "/spi@12d30000";
- spi2 = "/spi@12d40000";
- spi3 = "/spi@131a0000";
- spi4 = "/spi@131b0000";
- mmc0 = "/mmc@12200000";
- mmc1 = "/mmc@12210000";
- mmc2 = "/mmc@12220000";
- xhci0 = "/xhci@12000000";
- xhci1 = "/xhci@12400000";
serial0 = "/serial@12C30000";
console = "/serial@12C30000";
};
diff --git a/arch/arm/dts/exynos5420.dtsi b/arch/arm/dts/exynos5420.dtsi
deleted file mode 100644
index 02ead61..0000000
--- a/arch/arm/dts/exynos5420.dtsi
+++ /dev/null
@@ -1,70 +0,0 @@
-/*
- * (C) Copyright 2013 SAMSUNG Electronics
- * SAMSUNG EXYNOS5420 SoC device tree source
- *
- * SPDX-License-Identifier: GPL-2.0+
- */
-
-/include/ "exynos5.dtsi"
-
-/ {
- config {
- machine-arch-id = <4151>;
- };
-
- i2c@12ca0000 {
- #address-cells = <1>;
- #size-cells = <0>;
- compatible = "samsung,exynos5-hsi2c";
- reg = <0x12CA0000 0x100>;
- interrupts = <0 60 0>;
- };
-
- i2c@12cb0000 {
- #address-cells = <1>;
- #size-cells = <0>;
- compatible = "samsung,exynos5-hsi2c";
- reg = <0x12CB0000 0x100>;
- interrupts = <0 61 0>;
- };
-
- i2c@12cc0000 {
- #address-cells = <1>;
- #size-cells = <0>;
- compatible = "samsung,exynos5-hsi2c";
- reg = <0x12CC0000 0x100>;
- interrupts = <0 62 0>;
- };
-
- i2c@12cd0000 {
- #address-cells = <1>;
- #size-cells = <0>;
- compatible = "samsung,exynos5-hsi2c";
- reg = <0x12CD0000 0x100>;
- interrupts = <0 63 0>;
- };
-
- i2c@12e00000 {
- #address-cells = <1>;
- #size-cells = <0>;
- compatible = "samsung,exynos5-hsi2c";
- reg = <0x12E00000 0x100>;
- interrupts = <0 87 0>;
- };
-
- i2c@12e10000 {
- #address-cells = <1>;
- #size-cells = <0>;
- compatible = "samsung,exynos5-hsi2c";
- reg = <0x12E10000 0x100>;
- interrupts = <0 88 0>;
- };
-
- i2c@12e20000 {
- #address-cells = <1>;
- #size-cells = <0>;
- compatible = "samsung,exynos5-hsi2c";
- reg = <0x12E20000 0x100>;
- interrupts = <0 203 0>;
- };
-};
diff --git a/arch/arm/dts/exynos54xx.dtsi b/arch/arm/dts/exynos54xx.dtsi
new file mode 100644
index 0000000..b9f8e0b
--- /dev/null
+++ b/arch/arm/dts/exynos54xx.dtsi
@@ -0,0 +1,151 @@
+/*
+ * (C) Copyright 2013 SAMSUNG Electronics
+ * SAMSUNG EXYNOS5420 SoC device tree source
+ *
+ * SPDX-License-Identifier: GPL-2.0+
+ */
+
+/include/ "exynos5.dtsi"
+
+/ {
+ config {
+ machine-arch-id = <4151>;
+ };
+
+ aliases {
+ i2c0 = "/i2c@12c60000";
+ i2c1 = "/i2c@12c70000";
+ i2c2 = "/i2c@12c80000";
+ i2c3 = "/i2c@12c90000";
+ i2c4 = "/i2c@12ca0000";
+ i2c5 = "/i2c@12cb0000";
+ i2c6 = "/i2c@12cc0000";
+ i2c7 = "/i2c@12cd0000";
+ i2c8 = "/i2c@12e00000";
+ i2c9 = "/i2c@12e10000";
+ i2c10 = "/i2c@12e20000";
+ spi0 = "/spi@12d20000";
+ spi1 = "/spi@12d30000";
+ spi2 = "/spi@12d40000";
+ spi3 = "/spi@131a0000";
+ spi4 = "/spi@131b0000";
+ mmc0 = "/mmc@12200000";
+ mmc1 = "/mmc@12210000";
+ mmc2 = "/mmc@12220000";
+ xhci0 = "/xhci@12000000";
+ xhci1 = "/xhci@12400000";
+ };
+
+ i2c@12ca0000 {
+ #address-cells = <1>;
+ #size-cells = <0>;
+ compatible = "samsung,exynos5-hsi2c";
+ reg = <0x12CA0000 0x100>;
+ interrupts = <0 60 0>;
+ };
+
+ i2c@12cb0000 {
+ #address-cells = <1>;
+ #size-cells = <0>;
+ compatible = "samsung,exynos5-hsi2c";
+ reg = <0x12CB0000 0x100>;
+ interrupts = <0 61 0>;
+ };
+
+ i2c@12cc0000 {
+ #address-cells = <1>;
+ #size-cells = <0>;
+ compatible = "samsung,exynos5-hsi2c";
+ reg = <0x12CC0000 0x100>;
+ interrupts = <0 62 0>;
+ };
+
+ i2c@12cd0000 {
+ #address-cells = <1>;
+ #size-cells = <0>;
+ compatible = "samsung,exynos5-hsi2c";
+ reg = <0x12CD0000 0x100>;
+ interrupts = <0 63 0>;
+ };
+
+ i2c@12e00000 {
+ #address-cells = <1>;
+ #size-cells = <0>;
+ compatible = "samsung,exynos5-hsi2c";
+ reg = <0x12E00000 0x100>;
+ interrupts = <0 87 0>;
+ };
+
+ i2c@12e10000 {
+ #address-cells = <1>;
+ #size-cells = <0>;
+ compatible = "samsung,exynos5-hsi2c";
+ reg = <0x12E10000 0x100>;
+ interrupts = <0 88 0>;
+ };
+
+ i2c@12e20000 {
+ #address-cells = <1>;
+ #size-cells = <0>;
+ compatible = "samsung,exynos5-hsi2c";
+ reg = <0x12E20000 0x100>;
+ interrupts = <0 203 0>;
+ };
+
+ mmc@12200000 {
+ samsung,bus-width = <8>;
+ samsung,timing = <1 3 3>;
+ samsung,removable = <0>;
+ samsung,pre-init;
+ };
+
+ mmc@12210000 {
+ status = "disabled";
+ };
+
+ mmc@12220000 {
+ samsung,bus-width = <4>;
+ samsung,timing = <1 2 3>;
+ samsung,removable = <1>;
+ };
+
+ mmc@12230000 {
+ status = "disabled";
+ };
+
+ fimd@14400000 {
+ /* sysmmu is not used in U-Boot */
+ samsung,disable-sysmmu;
+ };
+
+ dp@145b0000 {
+ samsung,lt-status = <0>;
+
+ samsung,master-mode = <0>;
+ samsung,bist-mode = <0>;
+ samsung,bist-pattern = <0>;
+ samsung,h-sync-polarity = <0>;
+ samsung,v-sync-polarity = <0>;
+ samsung,interlaced = <0>;
+ samsung,color-space = <0>;
+ samsung,dynamic-range = <0>;
+ samsung,ycbcr-coeff = <0>;
+ samsung,color-depth = <1>;
+ };
+
+ dmc {
+ mem-type = "ddr3";
+ };
+
+ xhci1: xhci@12400000 {
+ compatible = "samsung,exynos5250-xhci";
+ reg = <0x12400000 0x10000>;
+ #address-cells = <1>;
+ #size-cells = <1>;
+
+ phy {
+ compatible = "samsung,exynos5250-usb3-phy";
+ reg = <0x12500000 0x100>;
+ };
+ };
+};
diff --git a/arch/arm/include/asm/arch-exynos/dmc.h b/arch/arm/include/asm/arch-exynos/dmc.h
index d78536d..ec3f9b6 100644
--- a/arch/arm/include/asm/arch-exynos/dmc.h
+++ b/arch/arm/include/asm/arch-exynos/dmc.h
@@ -467,6 +467,9 @@ enum mem_manuf {
/* PHY_CON1 register fields */
#define PHY_CON1_RDLVL_RDDATA_ADJ_SHIFT 0
+/* PHY_CON4 rgister fields */
+#define PHY_CON10_CTRL_OFFSETR3 (1 << 24)
+
/* PHY_CON12 register fields */
#define PHY_CON12_CTRL_START_POINT_SHIFT 24
#define PHY_CON12_CTRL_INC_SHIFT 16
diff --git a/arch/arm/include/asm/arch-exynos/power.h b/arch/arm/include/asm/arch-exynos/power.h
index a4b41ad..4f2447b 100644
--- a/arch/arm/include/asm/arch-exynos/power.h
+++ b/arch/arm/include/asm/arch-exynos/power.h
@@ -906,8 +906,8 @@ struct exynos5420_power {
unsigned int sysip_dat3;
unsigned char res11[0xe0];
unsigned int pmu_spare0;
- unsigned int pmu_spare1;
- unsigned int pmu_spare2;
+ unsigned int pmu_spare1; /* Store PHY0_CON4 for read leveling */
+ unsigned int pmu_spare2; /* Store PHY1_CON4 for read leveling */
unsigned int pmu_spare3;
unsigned char res12[0x4];
unsigned int cg_status0;
generated by cgit v1.1 at 2024-12-01 20:14:31 +0000