Merge the new NAND code (testing-NAND brach); see doc/README.nand

Rewrite of NAND code based on what is in 2.6.12 Linux kernel
Patch by Ladislav Michl, 29 Jun 2005

[Merge with /home/tur/nand/u-boot]

7 files changed, 979 insertions, 115 deletions

diff --git a/include/linux/mtd/compat.h b/include/linux/mtd/compat.h
new file mode 100644
index 0000000..460cd45
--- /dev/null
+++ b/include/linux/mtd/compat.h
@@ -0,0 +1,44 @@
+#ifndef _LINUX_COMPAT_H_
+#define _LINUX_COMPAT_H_
+
+#define __user
+#define __iomem
+
+#define ndelay(x)	udelay(1)
+
+#define printk	printf
+
+#define KERN_EMERG
+#define KERN_ALERT
+#define KERN_CRIT
+#define KERN_ERR
+#define KERN_WARNING
+#define KERN_NOTICE
+#define KERN_INFO
+#define KERN_DEBUG
+
+#define kmalloc(size, flags)	malloc(size)
+#define kfree(ptr)		free(ptr)
+
+/*
+ * ..and if you can't take the strict
+ * types, you can specify one yourself.
+ *
+ * Or not use min/max at all, of course.
+ */
+#define min_t(type,x,y) \
+	({ type __x = (x); type __y = (y); __x < __y ? __x: __y; })
+#define max_t(type,x,y) \
+	({ type __x = (x); type __y = (y); __x > __y ? __x: __y; })
+
+#define BUG() do { \
+	printf("U-Boot BUG at %s:%d!\n", __FILE__, __LINE__); \
+} while (0)
+
+#define BUG_ON(condition) do { if (condition) BUG(); } while(0)
+
+#define likely(x)	__builtin_expect(!!(x), 1)
+#define unlikely(x)	__builtin_expect(!!(x), 0)
+
+#define PAGE_SIZE	4096
+#endif
diff --git a/include/linux/mtd/mtd-abi.h b/include/linux/mtd/mtd-abi.h
new file mode 100644
index 0000000..3d1d416
--- /dev/null
+++ b/include/linux/mtd/mtd-abi.h
@@ -0,0 +1,99 @@
+/*
+ * $Id: mtd-abi.h,v 1.7 2004/11/23 15:37:32 gleixner Exp $
+ *
+ * Portions of MTD ABI definition which are shared by kernel and user space
+ */
+
+#ifndef __MTD_ABI_H__
+#define __MTD_ABI_H__
+
+struct erase_info_user {
+	uint32_t start;
+	uint32_t length;
+};
+
+struct mtd_oob_buf {
+	uint32_t start;
+	uint32_t length;
+	unsigned char *ptr;
+};
+
+#define MTD_ABSENT		0
+#define MTD_RAM			1
+#define MTD_ROM			2
+#define MTD_NORFLASH		3
+#define MTD_NANDFLASH		4
+#define MTD_PEROM		5
+#define MTD_OTHER		14
+#define MTD_UNKNOWN		15
+
+#define MTD_CLEAR_BITS		1       /* Bits can be cleared (flash) */
+#define MTD_SET_BITS		2       /* Bits can be set */
+#define MTD_ERASEABLE		4       /* Has an erase function */
+#define MTD_WRITEB_WRITEABLE	8       /* Direct IO is possible */
+#define MTD_VOLATILE		16      /* Set for RAMs */
+#define MTD_XIP			32	/* eXecute-In-Place possible */
+#define MTD_OOB			64	/* Out-of-band data (NAND flash) */
+#define MTD_ECC			128	/* Device capable of automatic ECC */
+#define MTD_NO_VIRTBLOCKS	256	/* Virtual blocks not allowed */
+
+/* Some common devices / combinations of capabilities */
+#define MTD_CAP_ROM		0
+#define MTD_CAP_RAM		(MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE)
+#define MTD_CAP_NORFLASH        (MTD_CLEAR_BITS|MTD_ERASEABLE)
+#define MTD_CAP_NANDFLASH       (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB)
+#define MTD_WRITEABLE		(MTD_CLEAR_BITS|MTD_SET_BITS)
+
+
+/* Types of automatic ECC/Checksum available */
+#define MTD_ECC_NONE		0 	/* No automatic ECC available */
+#define MTD_ECC_RS_DiskOnChip	1	/* Automatic ECC on DiskOnChip */
+#define MTD_ECC_SW		2	/* SW ECC for Toshiba & Samsung devices */
+
+/* ECC byte placement */
+#define MTD_NANDECC_OFF		0	/* Switch off ECC (Not recommended) */
+#define MTD_NANDECC_PLACE	1	/* Use the given placement in the structure (YAFFS1 legacy mode) */
+#define MTD_NANDECC_AUTOPLACE	2	/* Use the default placement scheme */
+#define MTD_NANDECC_PLACEONLY	3	/* Use the given placement in the structure (Do not store ecc result on read) */
+#define MTD_NANDECC_AUTOPL_USR 	4	/* Use the given autoplacement scheme rather than using the default */
+
+struct mtd_info_user {
+	uint8_t type;
+	uint32_t flags;
+	uint32_t size;	 /* Total size of the MTD */
+	uint32_t erasesize;
+	uint32_t oobblock;  /* Size of OOB blocks (e.g. 512) */
+	uint32_t oobsize;   /* Amount of OOB data per block (e.g. 16) */
+	uint32_t ecctype;
+	uint32_t eccsize;
+};
+
+struct region_info_user {
+	uint32_t offset;		/* At which this region starts,
+					 * from the beginning of the MTD */
+	uint32_t erasesize;		/* For this region */
+	uint32_t numblocks;		/* Number of blocks in this region */
+	uint32_t regionindex;
+};
+
+#define MEMGETINFO              _IOR('M', 1, struct mtd_info_user)
+#define MEMERASE                _IOW('M', 2, struct erase_info_user)
+#define MEMWRITEOOB             _IOWR('M', 3, struct mtd_oob_buf)
+#define MEMREADOOB              _IOWR('M', 4, struct mtd_oob_buf)
+#define MEMLOCK                 _IOW('M', 5, struct erase_info_user)
+#define MEMUNLOCK               _IOW('M', 6, struct erase_info_user)
+#define MEMGETREGIONCOUNT	_IOR('M', 7, int)
+#define MEMGETREGIONINFO	_IOWR('M', 8, struct region_info_user)
+#define MEMSETOOBSEL		_IOW('M', 9, struct nand_oobinfo)
+#define MEMGETOOBSEL		_IOR('M', 10, struct nand_oobinfo)
+#define MEMGETBADBLOCK		_IOW('M', 11, loff_t)
+#define MEMSETBADBLOCK		_IOW('M', 12, loff_t)
+
+struct nand_oobinfo {
+	uint32_t useecc;
+	uint32_t eccbytes;
+	uint32_t oobfree[8][2];
+	uint32_t eccpos[32];
+};
+
+#endif /* __MTD_ABI_H__ */
diff --git a/include/linux/mtd/mtd.h b/include/linux/mtd/mtd.h
new file mode 100644
index 0000000..13e9080
--- /dev/null
+++ b/include/linux/mtd/mtd.h
@@ -0,0 +1,214 @@
+/*
+ * $Id: mtd.h,v 1.56 2004/08/09 18:46:04 dmarlin Exp $
+ *
+ * Copyright (C) 1999-2003 David Woodhouse <dwmw2@infradead.org> et al.
+ *
+ * Released under GPL
+ */
+
+#ifndef __MTD_MTD_H__
+#define __MTD_MTD_H__
+#include <linux/types.h>
+#include <linux/mtd/mtd-abi.h>
+
+#define MAX_MTD_DEVICES 16
+
+#define MTD_ERASE_PENDING      	0x01
+#define MTD_ERASING		0x02
+#define MTD_ERASE_SUSPEND	0x04
+#define MTD_ERASE_DONE          0x08
+#define MTD_ERASE_FAILED        0x10
+
+/* If the erase fails, fail_addr might indicate exactly which block failed.  If
+   fail_addr = 0xffffffff, the failure was not at the device level or was not
+   specific to any particular block. */
+struct erase_info {
+	struct mtd_info *mtd;
+	u_int32_t addr;
+	u_int32_t len;
+	u_int32_t fail_addr;
+	u_long time;
+	u_long retries;
+	u_int dev;
+	u_int cell;
+	void (*callback) (struct erase_info *self);
+	u_long priv;
+	u_char state;
+	struct erase_info *next;
+};
+
+struct mtd_erase_region_info {
+	u_int32_t offset;			/* At which this region starts, from the beginning of the MTD */
+	u_int32_t erasesize;		/* For this region */
+	u_int32_t numblocks;		/* Number of blocks of erasesize in this region */
+};
+
+struct mtd_info {
+	u_char type;
+	u_int32_t flags;
+	u_int32_t size;	 /* Total size of the MTD */
+
+	/* "Major" erase size for the device. Naïve users may take this
+	 * to be the only erase size available, or may use the more detailed
+	 * information below if they desire
+	 */
+	u_int32_t erasesize;
+
+	u_int32_t oobblock;  /* Size of OOB blocks (e.g. 512) */
+	u_int32_t oobsize;   /* Amount of OOB data per block (e.g. 16) */
+	u_int32_t oobavail;  /* Number of bytes in OOB area available for fs  */
+	u_int32_t ecctype;
+	u_int32_t eccsize;
+
+
+	/* Kernel-only stuff starts here. */
+	char *name;
+	int index;
+
+	/* oobinfo is a nand_oobinfo structure, which can be set by iotcl (MEMSETOOBINFO) */
+	struct nand_oobinfo oobinfo;
+
+	/* Data for variable erase regions. If numeraseregions is zero,
+	 * it means that the whole device has erasesize as given above.
+	 */
+	int numeraseregions;
+	struct mtd_erase_region_info *eraseregions;
+
+	/* This really shouldn't be here. It can go away in 2.5 */
+	u_int32_t bank_size;
+
+	int (*erase) (struct mtd_info *mtd, struct erase_info *instr);
+
+	/* This stuff for eXecute-In-Place */
+	int (*point) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char **mtdbuf);
+
+	/* We probably shouldn't allow XIP if the unpoint isn't a NULL */
+	void (*unpoint) (struct mtd_info *mtd, u_char * addr, loff_t from, size_t len);
+
+
+	int (*read) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
+	int (*write) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf);
+
+	int (*read_ecc) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf, u_char *eccbuf, struct nand_oobinfo *oobsel);
+	int (*write_ecc) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf, u_char *eccbuf, struct nand_oobinfo *oobsel);
+
+	int (*read_oob) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
+	int (*write_oob) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf);
+
+	/*
+	 * Methods to access the protection register area, present in some
+	 * flash devices. The user data is one time programmable but the
+	 * factory data is read only.
+	 */
+	int (*read_user_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
+
+	int (*read_fact_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
+
+	/* This function is not yet implemented */
+	int (*write_user_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
+#if 0
+	/* kvec-based read/write methods. We need these especially for NAND flash,
+	   with its limited number of write cycles per erase.
+	   NB: The 'count' parameter is the number of _vectors_, each of
+	   which contains an (ofs, len) tuple.
+	*/
+	int (*readv) (struct mtd_info *mtd, struct kvec *vecs, unsigned long count, loff_t from, size_t *retlen);
+	int (*readv_ecc) (struct mtd_info *mtd, struct kvec *vecs, unsigned long count, loff_t from,
+		size_t *retlen, u_char *eccbuf, struct nand_oobinfo *oobsel);
+	int (*writev) (struct mtd_info *mtd, const struct kvec *vecs, unsigned long count, loff_t to, size_t *retlen);
+	int (*writev_ecc) (struct mtd_info *mtd, const struct kvec *vecs, unsigned long count, loff_t to,
+		size_t *retlen, u_char *eccbuf, struct nand_oobinfo *oobsel);
+#endif
+	/* Sync */
+	void (*sync) (struct mtd_info *mtd);
+#if 0
+	/* Chip-supported device locking */
+	int (*lock) (struct mtd_info *mtd, loff_t ofs, size_t len);
+	int (*unlock) (struct mtd_info *mtd, loff_t ofs, size_t len);
+
+	/* Power Management functions */
+	int (*suspend) (struct mtd_info *mtd);
+	void (*resume) (struct mtd_info *mtd);
+#endif
+	/* Bad block management functions */
+	int (*block_isbad) (struct mtd_info *mtd, loff_t ofs);
+	int (*block_markbad) (struct mtd_info *mtd, loff_t ofs);
+
+	void *priv;
+
+	struct module *owner;
+	int usecount;
+};
+
+
+	/* Kernel-side ioctl definitions */
+
+extern int add_mtd_device(struct mtd_info *mtd);
+extern int del_mtd_device (struct mtd_info *mtd);
+
+extern struct mtd_info *get_mtd_device(struct mtd_info *mtd, int num);
+
+extern void put_mtd_device(struct mtd_info *mtd);
+
+#if 0
+struct mtd_notifier {
+	void (*add)(struct mtd_info *mtd);
+	void (*remove)(struct mtd_info *mtd);
+	struct list_head list;
+};
+
+
+extern void register_mtd_user (struct mtd_notifier *new);
+extern int unregister_mtd_user (struct mtd_notifier *old);
+
+int default_mtd_writev(struct mtd_info *mtd, const struct kvec *vecs,
+		       unsigned long count, loff_t to, size_t *retlen);
+
+int default_mtd_readv(struct mtd_info *mtd, struct kvec *vecs,
+		      unsigned long count, loff_t from, size_t *retlen);
+#endif
+
+#define MTD_ERASE(mtd, args...) (*(mtd->erase))(mtd, args)
+#define MTD_POINT(mtd, a,b,c,d) (*(mtd->point))(mtd, a,b,c, (u_char **)(d))
+#define MTD_UNPOINT(mtd, arg) (*(mtd->unpoint))(mtd, (u_char *)arg)
+#define MTD_READ(mtd, args...) (*(mtd->read))(mtd, args)
+#define MTD_WRITE(mtd, args...) (*(mtd->write))(mtd, args)
+#define MTD_READV(mtd, args...) (*(mtd->readv))(mtd, args)
+#define MTD_WRITEV(mtd, args...) (*(mtd->writev))(mtd, args)
+#define MTD_READECC(mtd, args...) (*(mtd->read_ecc))(mtd, args)
+#define MTD_WRITEECC(mtd, args...) (*(mtd->write_ecc))(mtd, args)
+#define MTD_READOOB(mtd, args...) (*(mtd->read_oob))(mtd, args)
+#define MTD_WRITEOOB(mtd, args...) (*(mtd->write_oob))(mtd, args)
+#define MTD_SYNC(mtd) do { if (mtd->sync) (*(mtd->sync))(mtd);  } while (0)
+
+
+#ifdef CONFIG_MTD_PARTITIONS
+void mtd_erase_callback(struct erase_info *instr);
+#else
+static inline void mtd_erase_callback(struct erase_info *instr)
+{
+	if (instr->callback)
+		instr->callback(instr);
+}
+#endif
+
+/*
+ * Debugging macro and defines
+ */
+#define MTD_DEBUG_LEVEL0	(0)	/* Quiet   */
+#define MTD_DEBUG_LEVEL1	(1)	/* Audible */
+#define MTD_DEBUG_LEVEL2	(2)	/* Loud    */
+#define MTD_DEBUG_LEVEL3	(3)	/* Noisy   */
+
+#ifdef CONFIG_MTD_DEBUG
+#define DEBUG(n, args...)				\
+ 	do {						\
+		if (n <= CONFIG_MTD_DEBUG_VERBOSE)	\
+			printk(KERN_INFO args);		\
+	} while(0)
+#else /* CONFIG_MTD_DEBUG */
+#define DEBUG(n, args...) do { } while(0)
+
+#endif /* CONFIG_MTD_DEBUG */
+
+#endif /* __MTD_MTD_H__ */
diff --git a/include/linux/mtd/nand.h b/include/linux/mtd/nand.h
index 5236904..c105ecc 100644
--- a/include/linux/mtd/nand.h
+++ b/include/linux/mtd/nand.h
@@ -2,10 +2,10 @@
  *  linux/include/linux/mtd/nand.h
  *
  *  Copyright (c) 2000 David Woodhouse <dwmw2@mvhi.com>
- *                     Steven J. Hill <sjhill@cotw.com>
- *		       Thomas Gleixner <gleixner@autronix.de>
+ *                     Steven J. Hill <sjhill@realitydiluted.com>
+ *		       Thomas Gleixner <tglx@linutronix.de>
  *
- * $Id: nand.h,v 1.7 2003/07/24 23:30:46 a0384864 Exp $
+ * $Id: nand.h,v 1.68 2004/11/12 10:40:37 gleixner Exp $
  *
  * This program is free software; you can redistribute it and/or modify
  * it under the terms of the GNU General Public License version 2 as
@@ -32,10 +32,66 @@
  *			command delay times for different chips
  *   04-28-2002 TG	OOB config defines moved from nand.c to avoid duplicate
  *			defines in jffs2/wbuf.c
+ *   08-07-2002 TG	forced bad block location to byte 5 of OOB, even if
+ *			CONFIG_MTD_NAND_ECC_JFFS2 is not set
+ *   08-10-2002 TG	extensions to nand_chip structure to support HW-ECC
+ *
+ *   08-29-2002 tglx 	nand_chip structure: data_poi for selecting
+ *			internal / fs-driver buffer
+ *			support for 6byte/512byte hardware ECC
+ *			read_ecc, write_ecc extended for different oob-layout
+ *			oob layout selections: NAND_NONE_OOB, NAND_JFFS2_OOB,
+ *			NAND_YAFFS_OOB
+ *  11-25-2002 tglx	Added Manufacturer code FUJITSU, NATIONAL
+ *			Split manufacturer and device ID structures
+ *
+ *  02-08-2004 tglx 	added option field to nand structure for chip anomalities
+ *  05-25-2004 tglx 	added bad block table support, ST-MICRO manufacturer id
+ *			update of nand_chip structure description
  */
 #ifndef __LINUX_MTD_NAND_H
 #define __LINUX_MTD_NAND_H
 
+#include <linux/mtd/compat.h>
+#include <linux/mtd/mtd.h>
+
+struct mtd_info;
+/* Scan and identify a NAND device */
+extern int nand_scan (struct mtd_info *mtd, int max_chips);
+/* Free resources held by the NAND device */
+extern void nand_release (struct mtd_info *mtd);
+
+/* Read raw data from the device without ECC */
+extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_t len, size_t ooblen);
+
+
+
+/* This constant declares the max. oobsize / page, which
+ * is supported now. If you add a chip with bigger oobsize/page
+ * adjust this accordingly.
+ */
+#define NAND_MAX_OOBSIZE	64
+
+/*
+ * Constants for hardware specific CLE/ALE/NCE function
+*/
+/* Select the chip by setting nCE to low */
+#define NAND_CTL_SETNCE 	1
+/* Deselect the chip by setting nCE to high */
+#define NAND_CTL_CLRNCE		2
+/* Select the command latch by setting CLE to high */
+#define NAND_CTL_SETCLE		3
+/* Deselect the command latch by setting CLE to low */
+#define NAND_CTL_CLRCLE		4
+/* Select the address latch by setting ALE to high */
+#define NAND_CTL_SETALE		5
+/* Deselect the address latch by setting ALE to low */
+#define NAND_CTL_CLRALE		6
+/* Set write protection by setting WP to high. Not used! */
+#define NAND_CTL_SETWP		7
+/* Clear write protection by setting WP to low. Not used! */
+#define NAND_CTL_CLRWP		8
+
 /*
  * Standard NAND flash commands
  */
@@ -45,12 +101,104 @@
 #define NAND_CMD_READOOB	0x50
 #define NAND_CMD_ERASE1		0x60
 #define NAND_CMD_STATUS		0x70
+#define NAND_CMD_STATUS_MULTI	0x71
 #define NAND_CMD_SEQIN		0x80
 #define NAND_CMD_READID		0x90
 #define NAND_CMD_ERASE2		0xd0
 #define NAND_CMD_RESET		0xff
 
+/* Extended commands for large page devices */
+#define NAND_CMD_READSTART	0x30
+#define NAND_CMD_CACHEDPROG	0x15
+
+/* Status bits */
+#define NAND_STATUS_FAIL	0x01
+#define NAND_STATUS_FAIL_N1	0x02
+#define NAND_STATUS_TRUE_READY	0x20
+#define NAND_STATUS_READY	0x40
+#define NAND_STATUS_WP		0x80
+
+/*
+ * Constants for ECC_MODES
+ */
+
+/* No ECC. Usage is not recommended ! */
+#define NAND_ECC_NONE		0
+/* Software ECC 3 byte ECC per 256 Byte data */
+#define NAND_ECC_SOFT		1
+/* Hardware ECC 3 byte ECC per 256 Byte data */
+#define NAND_ECC_HW3_256	2
+/* Hardware ECC 3 byte ECC per 512 Byte data */
+#define NAND_ECC_HW3_512	3
+/* Hardware ECC 3 byte ECC per 512 Byte data */
+#define NAND_ECC_HW6_512	4
+/* Hardware ECC 8 byte ECC per 512 Byte data */
+#define NAND_ECC_HW8_512	6
+/* Hardware ECC 12 byte ECC per 2048 Byte data */
+#define NAND_ECC_HW12_2048	7
+
 /*
+ * Constants for Hardware ECC
+*/
+/* Reset Hardware ECC for read */
+#define NAND_ECC_READ		0
+/* Reset Hardware ECC for write */
+#define NAND_ECC_WRITE		1
+/* Enable Hardware ECC before syndrom is read back from flash */
+#define NAND_ECC_READSYN	2
+
+/* Option constants for bizarre disfunctionality and real
+*  features
+*/
+/* Chip can not auto increment pages */
+#define NAND_NO_AUTOINCR	0x00000001
+/* Buswitdh is 16 bit */
+#define NAND_BUSWIDTH_16	0x00000002
+/* Device supports partial programming without padding */
+#define NAND_NO_PADDING		0x00000004
+/* Chip has cache program function */
+#define NAND_CACHEPRG		0x00000008
+/* Chip has copy back function */
+#define NAND_COPYBACK		0x00000010
+/* AND Chip which has 4 banks and a confusing page / block
+ * assignment. See Renesas datasheet for further information */
+#define NAND_IS_AND		0x00000020
+/* Chip has a array of 4 pages which can be read without
+ * additional ready /busy waits */
+#define NAND_4PAGE_ARRAY	0x00000040
+
+/* Options valid for Samsung large page devices */
+#define NAND_SAMSUNG_LP_OPTIONS \
+	(NAND_NO_PADDING | NAND_CACHEPRG | NAND_COPYBACK)
+
+/* Macros to identify the above */
+#define NAND_CANAUTOINCR(chip) (!(chip->options & NAND_NO_AUTOINCR))
+#define NAND_MUST_PAD(chip) (!(chip->options & NAND_NO_PADDING))
+#define NAND_HAS_CACHEPROG(chip) ((chip->options & NAND_CACHEPRG))
+#define NAND_HAS_COPYBACK(chip) ((chip->options & NAND_COPYBACK))
+
+/* Mask to zero out the chip options, which come from the id table */
+#define NAND_CHIPOPTIONS_MSK	(0x0000ffff & ~NAND_NO_AUTOINCR)
+
+/* Non chip related options */
+/* Use a flash based bad block table. This option is passed to the
+ * default bad block table function. */
+#define NAND_USE_FLASH_BBT	0x00010000
+/* The hw ecc generator provides a syndrome instead a ecc value on read
+ * This can only work if we have the ecc bytes directly behind the
+ * data bytes. Applies for DOC and AG-AND Renesas HW Reed Solomon generators */
+#define NAND_HWECC_SYNDROME	0x00020000
+
+
+/* Options set by nand scan */
+/* Nand scan has allocated oob_buf */
+#define NAND_OOBBUF_ALLOC	0x40000000
+/* Nand scan has allocated data_buf */
+#define NAND_DATABUF_ALLOC	0x80000000
+
+
+/*
+ * nand_state_t - chip states
  * Enumeration for NAND flash chip state
  */
 typedef enum {
@@ -58,71 +206,138 @@ typedef enum {
 	FL_READING,
 	FL_WRITING,
 	FL_ERASING,
-	FL_SYNCING
+	FL_SYNCING,
+	FL_CACHEDPRG,
 } nand_state_t;
 
+/* Keep gcc happy */
+struct nand_chip;
 
-/*
- * NAND Private Flash Chip Data
- *
- * Structure overview:
- *
- *  IO_ADDR - address to access the 8 I/O lines of the flash device
- *
- *  hwcontrol - hardwarespecific function for accesing control-lines
- *
- *  dev_ready - hardwarespecific function for accesing device ready/busy line
- *
- *  chip_lock - spinlock used to protect access to this structure
- *
- *  wq - wait queue to sleep on if a NAND operation is in progress
- *
- *  state - give the current state of the NAND device
- *
- *  page_shift - number of address bits in a page (column address bits)
- *
- *  data_buf - data buffer passed to/from MTD user modules
- *
- *  data_cache - data cache for redundant page access and shadow for
- *		 ECC failure
- *
- *  ecc_code_buf - used only for holding calculated or read ECCs for
- *                 a page read or written when ECC is in use
- *
- *  reserved - padding to make structure fall on word boundary if
- *             when ECC is in use
+#if 0
+/**
+ * struct nand_hw_control - Control structure for hardware controller (e.g ECC generator) shared among independend devices
+ * @lock:               protection lock
+ * @active:		the mtd device which holds the controller currently
  */
-struct Nand {
-	char floor, chip;
-	unsigned long curadr;
-	unsigned char curmode;
-	/* Also some erase/write/pipeline info when we get that far */
+struct nand_hw_control {
+	spinlock_t	 lock;
+	struct nand_chip *active;
 };
+#endif
+
+/**
+ * struct nand_chip - NAND Private Flash Chip Data
+ * @IO_ADDR_R:		[BOARDSPECIFIC] address to read the 8 I/O lines of the flash device
+ * @IO_ADDR_W:		[BOARDSPECIFIC] address to write the 8 I/O lines of the flash device
+ * @read_byte:		[REPLACEABLE] read one byte from the chip
+ * @write_byte:		[REPLACEABLE] write one byte to the chip
+ * @read_word:		[REPLACEABLE] read one word from the chip
+ * @write_word:		[REPLACEABLE] write one word to the chip
+ * @write_buf:		[REPLACEABLE] write data from the buffer to the chip
+ * @read_buf:		[REPLACEABLE] read data from the chip into the buffer
+ * @verify_buf:		[REPLACEABLE] verify buffer contents against the chip data
+ * @select_chip:	[REPLACEABLE] select chip nr
+ * @block_bad:		[REPLACEABLE] check, if the block is bad
+ * @block_markbad:	[REPLACEABLE] mark the block bad
+ * @hwcontrol:		[BOARDSPECIFIC] hardwarespecific function for accesing control-lines
+ * @dev_ready:		[BOARDSPECIFIC] hardwarespecific function for accesing device ready/busy line
+ *			If set to NULL no access to ready/busy is available and the ready/busy information
+ *			is read from the chip status register
+ * @cmdfunc:		[REPLACEABLE] hardwarespecific function for writing commands to the chip
+ * @waitfunc:		[REPLACEABLE] hardwarespecific function for wait on ready
+ * @calculate_ecc: 	[REPLACEABLE] function for ecc calculation or readback from ecc hardware
+ * @correct_data:	[REPLACEABLE] function for ecc correction, matching to ecc generator (sw/hw)
+ * @enable_hwecc:	[BOARDSPECIFIC] function to enable (reset) hardware ecc generator. Must only
+ *			be provided if a hardware ECC is available
+ * @erase_cmd:		[INTERN] erase command write function, selectable due to AND support
+ * @scan_bbt:		[REPLACEABLE] function to scan bad block table
+ * @eccmode:		[BOARDSPECIFIC] mode of ecc, see defines
+ * @eccsize: 		[INTERN] databytes used per ecc-calculation
+ * @eccbytes: 		[INTERN] number of ecc bytes per ecc-calculation step
+ * @eccsteps:		[INTERN] number of ecc calculation steps per page
+ * @chip_delay:		[BOARDSPECIFIC] chip dependent delay for transfering data from array to read regs (tR)
+ * @chip_lock:		[INTERN] spinlock used to protect access to this structure and the chip
+ * @wq:			[INTERN] wait queue to sleep on if a NAND operation is in progress
+ * @state: 		[INTERN] the current state of the NAND device
+ * @page_shift:		[INTERN] number of address bits in a page (column address bits)
+ * @phys_erase_shift:	[INTERN] number of address bits in a physical eraseblock
+ * @bbt_erase_shift:	[INTERN] number of address bits in a bbt entry
+ * @chip_shift:		[INTERN] number of address bits in one chip
+ * @data_buf:		[INTERN] internal buffer for one page + oob
+ * @oob_buf:		[INTERN] oob buffer for one eraseblock
+ * @oobdirty:		[INTERN] indicates that oob_buf must be reinitialized
+ * @data_poi:		[INTERN] pointer to a data buffer
+ * @options:		[BOARDSPECIFIC] various chip options. They can partly be set to inform nand_scan about
+ *			special functionality. See the defines for further explanation
+ * @badblockpos:	[INTERN] position of the bad block marker in the oob area
+ * @numchips:		[INTERN] number of physical chips
+ * @chipsize:		[INTERN] the size of one chip for multichip arrays
+ * @pagemask:		[INTERN] page number mask = number of (pages / chip) - 1
+ * @pagebuf:		[INTERN] holds the pagenumber which is currently in data_buf
+ * @autooob:		[REPLACEABLE] the default (auto)placement scheme
+ * @bbt:		[INTERN] bad block table pointer
+ * @bbt_td:		[REPLACEABLE] bad block table descriptor for flash lookup
+ * @bbt_md:		[REPLACEABLE] bad block table mirror descriptor
+ * @badblock_pattern:	[REPLACEABLE] bad block scan pattern used for initial bad block scan
+ * @controller:		[OPTIONAL] a pointer to a hardware controller structure which is shared among multiple independend devices
+ * @priv:		[OPTIONAL] pointer to private chip date
+ */
 
 struct nand_chip {
+	void  __iomem	*IO_ADDR_R;
+	void  __iomem 	*IO_ADDR_W;
+
+	u_char		(*read_byte)(struct mtd_info *mtd);
+	void		(*write_byte)(struct mtd_info *mtd, u_char byte);
+	u16		(*read_word)(struct mtd_info *mtd);
+	void		(*write_word)(struct mtd_info *mtd, u16 word);
+
+	void		(*write_buf)(struct mtd_info *mtd, const u_char *buf, int len);
+	void		(*read_buf)(struct mtd_info *mtd, u_char *buf, int len);
+	int		(*verify_buf)(struct mtd_info *mtd, const u_char *buf, int len);
+	void		(*select_chip)(struct mtd_info *mtd, int chip);
+	int		(*block_bad)(struct mtd_info *mtd, loff_t ofs, int getchip);
+	int		(*block_markbad)(struct mtd_info *mtd, loff_t ofs);
+	void 		(*hwcontrol)(struct mtd_info *mtd, int cmd);
+	int  		(*dev_ready)(struct mtd_info *mtd);
+	void 		(*cmdfunc)(struct mtd_info *mtd, unsigned command, int column, int page_addr);
+	int 		(*waitfunc)(struct mtd_info *mtd, struct nand_chip *this, int state);
+	int		(*calculate_ecc)(struct mtd_info *mtd, const u_char *dat, u_char *ecc_code);
+	int 		(*correct_data)(struct mtd_info *mtd, u_char *dat, u_char *read_ecc, u_char *calc_ecc);
+	void		(*enable_hwecc)(struct mtd_info *mtd, int mode);
+	void		(*erase_cmd)(struct mtd_info *mtd, int page);
+	int		(*scan_bbt)(struct mtd_info *mtd);
+	int		eccmode;
+	int		eccsize;
+	int		eccbytes;
+	int		eccsteps;
+	int 		chip_delay;
+#if 0
+	spinlock_t	chip_lock;
+	wait_queue_head_t wq;
+	nand_state_t 	state;
+#endif
 	int 		page_shift;
+	int		phys_erase_shift;
+	int		bbt_erase_shift;
+	int		chip_shift;
 	u_char 		*data_buf;
-	u_char 		*data_cache;
-	int		cache_page;
-	u_char 		ecc_code_buf[6];
-	u_char 		reserved[2];
-	char ChipID; /* Type of DiskOnChip */
-	struct Nand *chips;
-	int chipshift;
-	char* chips_name;
-	unsigned long erasesize;
-	unsigned long mfr; /* Flash IDs - only one type of flash per device */
-	unsigned long id;
-	char* name;
-	int numchips;
-	char page256;
-	char pageadrlen;
-	unsigned long IO_ADDR;  /* address to access the 8 I/O lines to the flash device */
-	unsigned long totlen;
-	uint oobblock;  /* Size of OOB blocks (e.g. 512) */
-	uint oobsize;   /* Amount of OOB data per block (e.g. 16) */
-	uint eccsize;
-	int bus16;
+	u_char		*oob_buf;
+	int		oobdirty;
+	u_char		*data_poi;
+	unsigned int	options;
+	int		badblockpos;
+	int		numchips;
+	unsigned long	chipsize;
+	int		pagemask;
+	int		pagebuf;
+	struct nand_oobinfo	*autooob;
+	uint8_t		*bbt;
+	struct nand_bbt_descr	*bbt_td;
+	struct nand_bbt_descr	*bbt_md;
+	struct nand_bbt_descr	*badblock_pattern;
+	struct nand_hw_control  *controller;
+	void		*priv;
 };
 
 /*
@@ -130,71 +345,125 @@ struct nand_chip {
  */
 #define NAND_MFR_TOSHIBA	0x98
 #define NAND_MFR_SAMSUNG	0xec
+#define NAND_MFR_FUJITSU	0x04
+#define NAND_MFR_NATIONAL	0x8f
+#define NAND_MFR_RENESAS	0x07
+#define NAND_MFR_STMICRO	0x20
 
-/*
- * NAND Flash Device ID Structure
- *
- * Structure overview:
- *
- *  name - Complete name of device
- *
- *  manufacture_id - manufacturer ID code of device.
- *
- *  model_id - model ID code of device.
+/**
+ * struct nand_flash_dev - NAND Flash Device ID Structure
  *
- *  chipshift - total number of address bits for the device which
- *              is used to calculate address offsets and the total
- *              number of bytes the device is capable of.
- *
- *  page256 - denotes if flash device has 256 byte pages or not.
- *
- *  pageadrlen - number of bytes minus one needed to hold the
- *               complete address into the flash array. Keep in
- *               mind that when a read or write is done to a
- *               specific address, the address is input serially
- *               8 bits at a time. This structure member is used
- *               by the read/write routines as a loop index for
- *               shifting the address out 8 bits at a time.
- *
- *  erasesize - size of an erase block in the flash device.
+ * @name:  	Identify the device type
+ * @id:   	device ID code
+ * @pagesize:  	Pagesize in bytes. Either 256 or 512 or 0
+ *		If the pagesize is 0, then the real pagesize
+ *		and the eraseize are determined from the
+ *		extended id bytes in the chip
+ * @erasesize: 	Size of an erase block in the flash device.
+ * @chipsize:  	Total chipsize in Mega Bytes
+ * @options:	Bitfield to store chip relevant options
  */
 struct nand_flash_dev {
-	char * name;
-	int manufacture_id;
-	int model_id;
-	int chipshift;
-	char page256;
-	char pageadrlen;
+	char *name;
+	int id;
+	unsigned long pagesize;
+	unsigned long chipsize;
 	unsigned long erasesize;
-	int bus16;
+	unsigned long options;
 };
 
+/**
+ * struct nand_manufacturers - NAND Flash Manufacturer ID Structure
+ * @name:	Manufacturer name
+ * @id: 	manufacturer ID code of device.
+*/
+struct nand_manufacturers {
+	int id;
+	char * name;
+};
+
+extern struct nand_flash_dev nand_flash_ids[];
+extern struct nand_manufacturers nand_manuf_ids[];
+
+/**
+ * struct nand_bbt_descr - bad block table descriptor
+ * @options:	options for this descriptor
+ * @pages:	the page(s) where we find the bbt, used with option BBT_ABSPAGE
+ *		when bbt is searched, then we store the found bbts pages here.
+ *		Its an array and supports up to 8 chips now
+ * @offs:	offset of the pattern in the oob area of the page
+ * @veroffs:	offset of the bbt version counter in the oob are of the page
+ * @version:	version read from the bbt page during scan
+ * @len:	length of the pattern, if 0 no pattern check is performed
+ * @maxblocks:	maximum number of blocks to search for a bbt. This number of
+ *		blocks is reserved at the end of the device where the tables are
+ *		written.
+ * @reserved_block_code: if non-0, this pattern denotes a reserved (rather than
+ *              bad) block in the stored bbt
+ * @pattern:	pattern to identify bad block table or factory marked good /
+ *		bad blocks, can be NULL, if len = 0
+ *
+ * Descriptor for the bad block table marker and the descriptor for the
+ * pattern which identifies good and bad blocks. The assumption is made
+ * that the pattern and the version count are always located in the oob area
+ * of the first block.
+ */
+struct nand_bbt_descr {
+	int	options;
+	int	pages[NAND_MAX_CHIPS];
+	int	offs;
+	int	veroffs;
+	uint8_t	version[NAND_MAX_CHIPS];
+	int	len;
+	int 	maxblocks;
+	int	reserved_block_code;
+	uint8_t	*pattern;
+};
+
+/* Options for the bad block table descriptors */
+
+/* The number of bits used per block in the bbt on the device */
+#define NAND_BBT_NRBITS_MSK	0x0000000F
+#define NAND_BBT_1BIT		0x00000001
+#define NAND_BBT_2BIT		0x00000002
+#define NAND_BBT_4BIT		0x00000004
+#define NAND_BBT_8BIT		0x00000008
+/* The bad block table is in the last good block of the device */
+#define	NAND_BBT_LASTBLOCK	0x00000010
+/* The bbt is at the given page, else we must scan for the bbt */
+#define NAND_BBT_ABSPAGE	0x00000020
+/* The bbt is at the given page, else we must scan for the bbt */
+#define NAND_BBT_SEARCH		0x00000040
+/* bbt is stored per chip on multichip devices */
+#define NAND_BBT_PERCHIP	0x00000080
+/* bbt has a version counter at offset veroffs */
+#define NAND_BBT_VERSION	0x00000100
+/* Create a bbt if none axists */
+#define NAND_BBT_CREATE		0x00000200
+/* Search good / bad pattern through all pages of a block */
+#define NAND_BBT_SCANALLPAGES	0x00000400
+/* Scan block empty during good / bad block scan */
+#define NAND_BBT_SCANEMPTY	0x00000800
+/* Write bbt if neccecary */
+#define NAND_BBT_WRITE		0x00001000
+/* Read and write back block contents when writing bbt */
+#define NAND_BBT_SAVECONTENT	0x00002000
+/* Search good / bad pattern on the first and the second page */
+#define NAND_BBT_SCAN2NDPAGE	0x00004000
+
+/* The maximum number of blocks to scan for a bbt */
+#define NAND_BBT_SCAN_MAXBLOCKS	4
+
+extern int nand_scan_bbt (struct mtd_info *mtd, struct nand_bbt_descr *bd);
+extern int nand_update_bbt (struct mtd_info *mtd, loff_t offs);
+extern int nand_default_bbt (struct mtd_info *mtd);
+extern int nand_isbad_bbt (struct mtd_info *mtd, loff_t offs, int allowbbt);
+extern int nand_erase_nand (struct mtd_info *mtd, struct erase_info *instr, int allowbbt);
+
 /*
 * Constants for oob configuration
 */
-#define NAND_NOOB_ECCPOS0		0
-#define NAND_NOOB_ECCPOS1		1
-#define NAND_NOOB_ECCPOS2		2
-#define NAND_NOOB_ECCPOS3		3
-#define NAND_NOOB_ECCPOS4		6
-#define NAND_NOOB_ECCPOS5		7
-#define NAND_NOOB_BADBPOS		-1
-#define NAND_NOOB_ECCVPOS		-1
-
-#define NAND_JFFS2_OOB_ECCPOS0		0
-#define NAND_JFFS2_OOB_ECCPOS1		1
-#define NAND_JFFS2_OOB_ECCPOS2		2
-#define NAND_JFFS2_OOB_ECCPOS3		3
-#define NAND_JFFS2_OOB_ECCPOS4		6
-#define NAND_JFFS2_OOB_ECCPOS5		7
-#define NAND_JFFS2_OOB_BADBPOS		5
-#define NAND_JFFS2_OOB_ECCVPOS		4
-
-#define NAND_JFFS2_OOB8_FSDAPOS		6
-#define NAND_JFFS2_OOB16_FSDAPOS	8
-#define NAND_JFFS2_OOB8_FSDALEN		2
-#define NAND_JFFS2_OOB16_FSDALEN	8
-
-unsigned long nand_probe(unsigned long physadr);
+#define NAND_SMALL_BADBLOCK_POS		5
+#define NAND_LARGE_BADBLOCK_POS		0
 
 #endif /* __LINUX_MTD_NAND_H */
diff --git a/include/linux/mtd/nand_ecc.h b/include/linux/mtd/nand_ecc.h
new file mode 100644
index 0000000..12c5bc3
--- /dev/null
+++ b/include/linux/mtd/nand_ecc.h
@@ -0,0 +1,30 @@
+/*
+ *  drivers/mtd/nand_ecc.h
+ *
+ *  Copyright (C) 2000 Steven J. Hill (sjhill@realitydiluted.com)
+ *
+ * $Id: nand_ecc.h,v 1.4 2004/06/17 02:35:02 dbrown Exp $
+ *
+ * This program is free software; you can redistribute it and/or modify
+ * it under the terms of the GNU General Public License version 2 as
+ * published by the Free Software Foundation.
+ *
+ * This file is the header for the ECC algorithm.
+ */
+
+#ifndef __MTD_NAND_ECC_H__
+#define __MTD_NAND_ECC_H__
+
+struct mtd_info;
+
+/*
+ * Calculate 3 byte ECC code for 256 byte block
+ */
+int nand_calculate_ecc(struct mtd_info *mtd, const u_char *dat, u_char *ecc_code);
+
+/*
+ * Detect and correct a 1 bit error for 256 byte block
+ */
+int nand_correct_data(struct mtd_info *mtd, u_char *dat, u_char *read_ecc, u_char *calc_ecc);
+
+#endif /* __MTD_NAND_ECC_H__ */
diff --git a/include/linux/mtd/nand_ids.h b/include/linux/mtd/nand_ids.h
index a3d0363..d9eb911 100644
--- a/include/linux/mtd/nand_ids.h
+++ b/include/linux/mtd/nand_ids.h
@@ -28,6 +28,10 @@
 #ifndef __LINUX_MTD_NAND_IDS_H
 #define __LINUX_MTD_NAND_IDS_H
 
+#ifndef CFG_NAND_LEGACY
+#error This module is for the legacy NAND support
+#endif
+
 static struct nand_flash_dev nand_flash_ids[] = {
 	{"Toshiba TC5816BDC",     NAND_MFR_TOSHIBA, 0x64, 21, 1, 2, 0x1000, 0},
 	{"Toshiba TC5832DC",      NAND_MFR_TOSHIBA, 0x6b, 22, 0, 2, 0x2000, 0},
@@ -49,6 +53,7 @@ static struct nand_flash_dev nand_flash_ids[] = {
 	{"Samsung KM29W16000",    NAND_MFR_SAMSUNG, 0xea, 21, 1, 2, 0x1000, 0},
 	{"Samsung K9F5616Q0C",    NAND_MFR_SAMSUNG, 0x45, 25, 0, 2, 0x4000, 1},
 	{"Samsung K9K1216Q0C",    NAND_MFR_SAMSUNG, 0x46, 26, 0, 3, 0x4000, 1},
+	{"Samsung K9F1G08U0M",    NAND_MFR_SAMSUNG, 0xf1, 27, 0, 2, 0, 0},
 	{NULL,}
 };
 
diff --git a/include/linux/mtd/nand_legacy.h b/include/linux/mtd/nand_legacy.h
new file mode 100644
index 0000000..a8769e7
--- /dev/null
+++ b/include/linux/mtd/nand_legacy.h
@@ -0,0 +1,203 @@
+/*
+ *  linux/include/linux/mtd/nand.h
+ *
+ *  Copyright (c) 2000 David Woodhouse <dwmw2@mvhi.com>
+ *                     Steven J. Hill <sjhill@cotw.com>
+ *		       Thomas Gleixner <gleixner@autronix.de>
+ *
+ * $Id: nand.h,v 1.7 2003/07/24 23:30:46 a0384864 Exp $
+ *
+ * This program is free software; you can redistribute it and/or modify
+ * it under the terms of the GNU General Public License version 2 as
+ * published by the Free Software Foundation.
+ *
+ *  Info:
+ *   Contains standard defines and IDs for NAND flash devices
+ *
+ *  Changelog:
+ *   01-31-2000 DMW     Created
+ *   09-18-2000 SJH     Moved structure out of the Disk-On-Chip drivers
+ *			so it can be used by other NAND flash device
+ *			drivers. I also changed the copyright since none
+ *			of the original contents of this file are specific
+ *			to DoC devices. David can whack me with a baseball
+ *			bat later if I did something naughty.
+ *   10-11-2000 SJH     Added private NAND flash structure for driver
+ *   10-24-2000 SJH     Added prototype for 'nand_scan' function
+ *   10-29-2001 TG	changed nand_chip structure to support
+ *			hardwarespecific function for accessing control lines
+ *   02-21-2002 TG	added support for different read/write adress and
+ *			ready/busy line access function
+ *   02-26-2002 TG	added chip_delay to nand_chip structure to optimize
+ *			command delay times for different chips
+ *   04-28-2002 TG	OOB config defines moved from nand.c to avoid duplicate
+ *			defines in jffs2/wbuf.c
+ */
+#ifndef __LINUX_MTD_NAND_LEGACY_H
+#define __LINUX_MTD_NAND_LEGACY_H
+
+#ifndef CFG_NAND_LEGACY
+#error This module is for the legacy NAND support
+#endif
+
+/*
+ * Standard NAND flash commands
+ */
+#define NAND_CMD_READ0		0
+#define NAND_CMD_READ1		1
+#define NAND_CMD_PAGEPROG	0x10
+#define NAND_CMD_READOOB	0x50
+#define NAND_CMD_ERASE1		0x60
+#define NAND_CMD_STATUS		0x70
+#define NAND_CMD_SEQIN		0x80
+#define NAND_CMD_READID		0x90
+#define NAND_CMD_ERASE2		0xd0
+#define NAND_CMD_RESET		0xff
+
+/*
+ * Enumeration for NAND flash chip state
+ */
+typedef enum {
+	FL_READY,
+	FL_READING,
+	FL_WRITING,
+	FL_ERASING,
+	FL_SYNCING
+} nand_state_t;
+
+
+/*
+ * NAND Private Flash Chip Data
+ *
+ * Structure overview:
+ *
+ *  IO_ADDR - address to access the 8 I/O lines of the flash device
+ *
+ *  hwcontrol - hardwarespecific function for accesing control-lines
+ *
+ *  dev_ready - hardwarespecific function for accesing device ready/busy line
+ *
+ *  chip_lock - spinlock used to protect access to this structure
+ *
+ *  wq - wait queue to sleep on if a NAND operation is in progress
+ *
+ *  state - give the current state of the NAND device
+ *
+ *  page_shift - number of address bits in a page (column address bits)
+ *
+ *  data_buf - data buffer passed to/from MTD user modules
+ *
+ *  data_cache - data cache for redundant page access and shadow for
+ *		 ECC failure
+ *
+ *  ecc_code_buf - used only for holding calculated or read ECCs for
+ *                 a page read or written when ECC is in use
+ *
+ *  reserved - padding to make structure fall on word boundary if
+ *             when ECC is in use
+ */
+struct Nand {
+	char floor, chip;
+	unsigned long curadr;
+	unsigned char curmode;
+	/* Also some erase/write/pipeline info when we get that far */
+};
+
+struct nand_chip {
+	int 		page_shift;
+	u_char 		*data_buf;
+	u_char 		*data_cache;
+	int		cache_page;
+	u_char 		ecc_code_buf[6];
+	u_char 		reserved[2];
+	char ChipID; /* Type of DiskOnChip */
+	struct Nand *chips;
+	int chipshift;
+	char* chips_name;
+	unsigned long erasesize;
+	unsigned long mfr; /* Flash IDs - only one type of flash per device */
+	unsigned long id;
+	char* name;
+	int numchips;
+	char page256;
+	char pageadrlen;
+	unsigned long IO_ADDR;  /* address to access the 8 I/O lines to the flash device */
+	unsigned long totlen;
+	uint oobblock;  /* Size of OOB blocks (e.g. 512) */
+	uint oobsize;   /* Amount of OOB data per block (e.g. 16) */
+	uint eccsize;
+	int bus16;
+};
+
+/*
+ * NAND Flash Manufacturer ID Codes
+ */
+#define NAND_MFR_TOSHIBA	0x98
+#define NAND_MFR_SAMSUNG	0xec
+
+/*
+ * NAND Flash Device ID Structure
+ *
+ * Structure overview:
+ *
+ *  name - Complete name of device
+ *
+ *  manufacture_id - manufacturer ID code of device.
+ *
+ *  model_id - model ID code of device.
+ *
+ *  chipshift - total number of address bits for the device which
+ *              is used to calculate address offsets and the total
+ *              number of bytes the device is capable of.
+ *
+ *  page256 - denotes if flash device has 256 byte pages or not.
+ *
+ *  pageadrlen - number of bytes minus one needed to hold the
+ *               complete address into the flash array. Keep in
+ *               mind that when a read or write is done to a
+ *               specific address, the address is input serially
+ *               8 bits at a time. This structure member is used
+ *               by the read/write routines as a loop index for
+ *               shifting the address out 8 bits at a time.
+ *
+ *  erasesize - size of an erase block in the flash device.
+ */
+struct nand_flash_dev {
+	char * name;
+	int manufacture_id;
+	int model_id;
+	int chipshift;
+	char page256;
+	char pageadrlen;
+	unsigned long erasesize;
+	int bus16;
+};
+
+/*
+* Constants for oob configuration
+*/
+#define NAND_NOOB_ECCPOS0		0
+#define NAND_NOOB_ECCPOS1		1
+#define NAND_NOOB_ECCPOS2		2
+#define NAND_NOOB_ECCPOS3		3
+#define NAND_NOOB_ECCPOS4		6
+#define NAND_NOOB_ECCPOS5		7
+#define NAND_NOOB_BADBPOS		-1
+#define NAND_NOOB_ECCVPOS		-1
+
+#define NAND_JFFS2_OOB_ECCPOS0		0
+#define NAND_JFFS2_OOB_ECCPOS1		1
+#define NAND_JFFS2_OOB_ECCPOS2		2
+#define NAND_JFFS2_OOB_ECCPOS3		3
+#define NAND_JFFS2_OOB_ECCPOS4		6
+#define NAND_JFFS2_OOB_ECCPOS5		7
+#define NAND_JFFS2_OOB_BADBPOS		5
+#define NAND_JFFS2_OOB_ECCVPOS		4
+
+#define NAND_JFFS2_OOB8_FSDAPOS		6
+#define NAND_JFFS2_OOB16_FSDAPOS	8
+#define NAND_JFFS2_OOB8_FSDALEN		2
+#define NAND_JFFS2_OOB16_FSDALEN	8
+
+unsigned long nand_probe(unsigned long physadr);
+#endif /* __LINUX_MTD_NAND_LEGACY_H */