Merge with testing-NAND (Rewrite of NAND code)

1 files changed, 99 insertions, 0 deletions

diff --git a/include/linux/mtd/mtd-abi.h b/include/linux/mtd/mtd-abi.h
new file mode 100644
index 0000000..afe96b5
--- /dev/null
+++ b/include/linux/mtd/mtd-abi.h
@@ -0,0 +1,99 @@
+/*
+ * $Id: mtd-abi.h,v 1.7 2004/11/23 15:37:32 gleixner Exp $
+ *
+ * Portions of MTD ABI definition which are shared by kernel and user space 
+ */
+
+#ifndef __MTD_ABI_H__
+#define __MTD_ABI_H__
+
+struct erase_info_user {
+	uint32_t start;
+	uint32_t length;
+};
+
+struct mtd_oob_buf {
+	uint32_t start;
+	uint32_t length;
+	unsigned char *ptr;
+};
+
+#define MTD_ABSENT		0
+#define MTD_RAM			1
+#define MTD_ROM			2
+#define MTD_NORFLASH		3
+#define MTD_NANDFLASH		4
+#define MTD_PEROM		5
+#define MTD_OTHER		14
+#define MTD_UNKNOWN		15
+
+#define MTD_CLEAR_BITS		1       // Bits can be cleared (flash)
+#define MTD_SET_BITS		2       // Bits can be set
+#define MTD_ERASEABLE		4       // Has an erase function
+#define MTD_WRITEB_WRITEABLE	8       // Direct IO is possible
+#define MTD_VOLATILE		16      // Set for RAMs
+#define MTD_XIP			32	// eXecute-In-Place possible
+#define MTD_OOB			64	// Out-of-band data (NAND flash)
+#define MTD_ECC			128	// Device capable of automatic ECC
+#define MTD_NO_VIRTBLOCKS	256	// Virtual blocks not allowed
+
+// Some common devices / combinations of capabilities
+#define MTD_CAP_ROM		0
+#define MTD_CAP_RAM		(MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE)
+#define MTD_CAP_NORFLASH        (MTD_CLEAR_BITS|MTD_ERASEABLE)
+#define MTD_CAP_NANDFLASH       (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB)
+#define MTD_WRITEABLE		(MTD_CLEAR_BITS|MTD_SET_BITS)
+
+
+// Types of automatic ECC/Checksum available
+#define MTD_ECC_NONE		0 	// No automatic ECC available
+#define MTD_ECC_RS_DiskOnChip	1	// Automatic ECC on DiskOnChip
+#define MTD_ECC_SW		2	// SW ECC for Toshiba & Samsung devices
+
+/* ECC byte placement */
+#define MTD_NANDECC_OFF		0	// Switch off ECC (Not recommended)
+#define MTD_NANDECC_PLACE	1	// Use the given placement in the structure (YAFFS1 legacy mode)
+#define MTD_NANDECC_AUTOPLACE	2	// Use the default placement scheme
+#define MTD_NANDECC_PLACEONLY	3	// Use the given placement in the structure (Do not store ecc result on read)
+#define MTD_NANDECC_AUTOPL_USR 	4	// Use the given autoplacement scheme rather than using the default
+
+struct mtd_info_user {
+	uint8_t type;
+	uint32_t flags;
+	uint32_t size;	 // Total size of the MTD
+	uint32_t erasesize;
+	uint32_t oobblock;  // Size of OOB blocks (e.g. 512)
+	uint32_t oobsize;   // Amount of OOB data per block (e.g. 16)
+	uint32_t ecctype;
+	uint32_t eccsize;
+};
+
+struct region_info_user {
+	uint32_t offset;		/* At which this region starts, 
+					 * from the beginning of the MTD */
+	uint32_t erasesize;		/* For this region */
+	uint32_t numblocks;		/* Number of blocks in this region */
+	uint32_t regionindex;
+};
+
+#define MEMGETINFO              _IOR('M', 1, struct mtd_info_user)
+#define MEMERASE                _IOW('M', 2, struct erase_info_user)
+#define MEMWRITEOOB             _IOWR('M', 3, struct mtd_oob_buf)
+#define MEMREADOOB              _IOWR('M', 4, struct mtd_oob_buf)
+#define MEMLOCK                 _IOW('M', 5, struct erase_info_user)
+#define MEMUNLOCK               _IOW('M', 6, struct erase_info_user)
+#define MEMGETREGIONCOUNT	_IOR('M', 7, int)
+#define MEMGETREGIONINFO	_IOWR('M', 8, struct region_info_user)
+#define MEMSETOOBSEL		_IOW('M', 9, struct nand_oobinfo)
+#define MEMGETOOBSEL		_IOR('M', 10, struct nand_oobinfo)
+#define MEMGETBADBLOCK		_IOW('M', 11, loff_t)
+#define MEMSETBADBLOCK		_IOW('M', 12, loff_t)
+
+struct nand_oobinfo {
+	uint32_t useecc;
+	uint32_t eccbytes;
+	uint32_t oobfree[8][2];
+	uint32_t eccpos[32];
+};
+
+#endif /* __MTD_ABI_H__ */